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AU2002320252A1 - Light-emitting nanoparticles and method of making same - Google Patents

Light-emitting nanoparticles and method of making same

Info

Publication number
AU2002320252A1
AU2002320252A1 AU2002320252A AU2002320252A AU2002320252A1 AU 2002320252 A1 AU2002320252 A1 AU 2002320252A1 AU 2002320252 A AU2002320252 A AU 2002320252A AU 2002320252 A AU2002320252 A AU 2002320252A AU 2002320252 A1 AU2002320252 A1 AU 2002320252A1
Authority
AU
Australia
Prior art keywords
light
making same
emitting nanoparticles
nanoparticles
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002320252A
Inventor
Keith P. Johnston
Brian A. Korgel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Texas System
Original Assignee
University of Texas System
University of Texas at Austin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/109,578 external-priority patent/US6846565B2/en
Priority claimed from US10/109,608 external-priority patent/US6918946B2/en
Application filed by University of Texas System, University of Texas at Austin filed Critical University of Texas System
Publication of AU2002320252A1 publication Critical patent/AU2002320252A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H10P14/265—
    • H10P14/3411—
    • H10P14/3461—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Luminescent Compositions (AREA)
  • Silicon Compounds (AREA)
AU2002320252A 2001-07-02 2002-07-02 Light-emitting nanoparticles and method of making same Abandoned AU2002320252A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US30259401P 2001-07-02 2001-07-02
US60/302,594 2001-07-02
US10/109,578 2002-03-28
US10/109,608 2002-03-28
US10/109,578 US6846565B2 (en) 2001-07-02 2002-03-28 Light-emitting nanoparticles and method of making same
US10/109,608 US6918946B2 (en) 2001-07-02 2002-03-28 Applications of light-emitting nanoparticles
PCT/US2002/021076 WO2003003982A2 (en) 2001-07-02 2002-07-02 Light-emitting nanoparticles and method of making same

Publications (1)

Publication Number Publication Date
AU2002320252A1 true AU2002320252A1 (en) 2003-01-21

Family

ID=27380689

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002320252A Abandoned AU2002320252A1 (en) 2001-07-02 2002-07-02 Light-emitting nanoparticles and method of making same

Country Status (2)

Country Link
AU (1) AU2002320252A1 (en)
WO (1) WO2003003982A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2411661B (en) * 2002-04-09 2005-11-09 Ngimat Co Variable capacitors, composite materials
US7273643B2 (en) * 2003-06-24 2007-09-25 Eastman Kodak Company Article having multiple spectral deposits
EP1577957B1 (en) * 2004-03-18 2009-05-13 C.R.F. Società Consortile per Azioni Light emitting device using a three-dimension percolated layer, and manufacturing process thereof
US7777233B2 (en) 2007-10-30 2010-08-17 Eastman Kodak Company Device containing non-blinking quantum dots
EP3717922B1 (en) 2017-12-03 2025-08-20 Cook Medical Technologies, LLC Mri compatible interventional wireguide

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
AU7370596A (en) * 1995-09-29 1997-04-30 Midwest Research Institute Semiconductor nanoparticle colloids
US6344272B1 (en) * 1997-03-12 2002-02-05 Wm. Marsh Rice University Metal nanoshells
US6159620A (en) * 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
EP1250474B1 (en) * 1999-07-26 2005-10-26 Massachusetts Institute of Technology Tellurium-containing nanocrystalline materials
WO2001014250A2 (en) * 1999-08-23 2001-03-01 University Of Hawaii Synthesis of silicon nanoparticles and metal-centered silicon nanoparticles and applications thereof
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
ATE295968T1 (en) * 1999-10-22 2005-06-15 Univ Illinois DEVICES FOR STIMULATED EMISSION FROM SILICON NANOPARTICLES
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6780242B2 (en) * 2000-07-26 2004-08-24 Nec Laboratories America, Inc. Method for manufacturing high-quality manganese-doped semiconductor nanocrystals

Also Published As

Publication number Publication date
WO2003003982A2 (en) 2003-01-16
WO2003003982A3 (en) 2003-07-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase