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AU2002350581A1 - Laser apparatus - Google Patents

Laser apparatus

Info

Publication number
AU2002350581A1
AU2002350581A1 AU2002350581A AU2002350581A AU2002350581A1 AU 2002350581 A1 AU2002350581 A1 AU 2002350581A1 AU 2002350581 A AU2002350581 A AU 2002350581A AU 2002350581 A AU2002350581 A AU 2002350581A AU 2002350581 A1 AU2002350581 A1 AU 2002350581A1
Authority
AU
Australia
Prior art keywords
laser apparatus
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002350581A
Inventor
Christian Pedersen
Weidong Sheng
Peter Tidemand-Lictenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TORSANA LASER TECHNOLOGIES AS
Original Assignee
TORSANA LASER TECHNOLOGIES AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TORSANA LASER TECHNOLOGIES AS filed Critical TORSANA LASER TECHNOLOGIES AS
Publication of AU2002350581A1 publication Critical patent/AU2002350581A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4062Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08018Mode suppression
    • H01S3/0804Transverse or lateral modes
    • H01S3/0805Transverse or lateral modes by apertures, e.g. pin-holes or knife-edges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
AU2002350581A 2001-10-23 2002-10-18 Laser apparatus Abandoned AU2002350581A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33050901P 2001-10-23 2001-10-23
US60/330,509 2001-10-23
PCT/EP2002/011731 WO2003036766A2 (en) 2001-10-23 2002-10-18 Laser apparatus

Publications (1)

Publication Number Publication Date
AU2002350581A1 true AU2002350581A1 (en) 2003-05-06

Family

ID=23290076

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002350581A Abandoned AU2002350581A1 (en) 2001-10-23 2002-10-18 Laser apparatus

Country Status (2)

Country Link
AU (1) AU2002350581A1 (en)
WO (1) WO2003036766A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528385B2 (en) 2002-03-15 2009-05-05 Pd-Ld, Inc. Fiber optic devices having volume Bragg grating elements
EP1502139A4 (en) 2002-03-15 2005-06-29 Pd Ld Inc Fiber optic devices having volume bragg grating elements
JP2007527616A (en) 2003-07-03 2007-09-27 ピーディー−エルディー、インク. Use of volume, Bragg, and grating to adjust laser emission characteristics
CA2540089A1 (en) 2003-09-26 2005-04-07 Pd-Ld, Inc. Methods for manufacturing volume bragg grating elements
DK1756922T3 (en) * 2004-06-16 2008-11-10 Univ Danmarks Tekniske Segmented diode laser system
DE102004040608B4 (en) * 2004-08-21 2006-09-07 Dilas Diodenlaser Gmbh Diode laser with an optical device for increasing the radiance of an output laser beam emerging from it
US7949030B2 (en) 2005-02-03 2011-05-24 Pd-Ld, Inc. High-power, phased-locked, laser arrays
TW200644365A (en) * 2005-03-25 2006-12-16 Sumitomo Osaka Cement Co Ltd External resonance type semiconductor laser
DE602006007617D1 (en) 2005-12-16 2009-08-13 Univ Danmarks Tekniske LASER SYSTEM WITH SEGMENTED DIODE LASER
US7583476B2 (en) 2006-08-22 2009-09-01 Intri-Plex Technologies, Inc. Tolerance ring for data storage with cut-out feature for mass control
US7468832B2 (en) * 2006-10-05 2008-12-23 Northrop Grumman Corporation Method and system for coherent beam combining using an integrated diffractive beam combiner and sampler
WO2008045652A2 (en) * 2006-10-05 2008-04-17 Northrop Grumman Corporation Method and system for diffractive beam combining using doe combiner with passive phase control
US7436588B2 (en) * 2006-10-05 2008-10-14 Northrop Grumman Corporation Method and system for hybrid coherent and incoherent diffractive beam combining
US8455157B1 (en) 2007-04-26 2013-06-04 Pd-Ld, Inc. Methods for improving performance of holographic glasses
DE102008052475A1 (en) 2008-10-20 2010-04-29 Raab, Volker, Dr. A polarization
GB201107948D0 (en) * 2011-05-12 2011-06-22 Powerphotonic Ltd Multi-wavelength diode laser array
US9391713B2 (en) 2013-10-14 2016-07-12 Trumpf Laser Gmbh High brightness dense wavelength multiplexing laser
CN103904557A (en) * 2014-03-25 2014-07-02 中国科学院半导体研究所 Device and method for beam combination of laser devices
CN103996967B (en) * 2014-06-11 2018-03-06 中国科学院半导体研究所 The device of beam quality is improved for high power solid state laser
US20230213778A1 (en) 2020-12-29 2023-07-06 Monocrom, S.L. Spectral splitter device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0986848A1 (en) * 1997-06-06 2000-03-22 Torsana A/S Laser systems using phase conjugate feedback
US6192062B1 (en) * 1998-09-08 2001-02-20 Massachusetts Institute Of Technology Beam combining of diode laser array elements for high brightness and power

Also Published As

Publication number Publication date
WO2003036766A3 (en) 2003-10-23
WO2003036766A2 (en) 2003-05-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase