[go: up one dir, main page]

AU2002239563A1 - Photoacid generators and photoresists comprising same - Google Patents

Photoacid generators and photoresists comprising same

Info

Publication number
AU2002239563A1
AU2002239563A1 AU2002239563A AU3956302A AU2002239563A1 AU 2002239563 A1 AU2002239563 A1 AU 2002239563A1 AU 2002239563 A AU2002239563 A AU 2002239563A AU 3956302 A AU3956302 A AU 3956302A AU 2002239563 A1 AU2002239563 A1 AU 2002239563A1
Authority
AU
Australia
Prior art keywords
photoresists
same
photoacid generators
photoacid
generators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002239563A
Inventor
James F Cameron
Thomas M. Zydowsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22928331&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU2002239563(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2002239563A1 publication Critical patent/AU2002239563A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/02Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof
    • C07C303/20Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof by addition of sulfurous acid or salts thereof to compounds having carbon-to-carbon multiple bonds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01Sulfonic acids
    • C07C309/02Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/24Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a carbon skeleton containing six-membered aromatic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
AU2002239563A 2000-11-03 2001-11-03 Photoacid generators and photoresists comprising same Abandoned AU2002239563A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24584800P 2000-11-03 2000-11-03
US60/245,848 2000-11-03
PCT/US2001/047370 WO2002042845A2 (en) 2000-11-03 2001-11-03 Photoacid generators and photoresists comprising same

Publications (1)

Publication Number Publication Date
AU2002239563A1 true AU2002239563A1 (en) 2002-06-03

Family

ID=22928331

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002239563A Abandoned AU2002239563A1 (en) 2000-11-03 2001-11-03 Photoacid generators and photoresists comprising same

Country Status (4)

Country Link
US (1) US6849374B2 (en)
JP (7) JP4211971B2 (en)
AU (1) AU2002239563A1 (en)
WO (1) WO2002042845A2 (en)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3425606B2 (en) 1993-04-09 2003-07-14 佐藤 朝夫 Water treatment method
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
WO2002042845A2 (en) * 2000-11-03 2002-05-30 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
TWI304060B (en) * 2001-06-29 2008-12-11 Jsr Corp Acid generator and radiation-sensitive resin composition
JP4924256B2 (en) * 2001-06-29 2012-04-25 Jsr株式会社 Radiation sensitive resin composition
DE60234409D1 (en) 2001-06-29 2009-12-31 Jsr Corp Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive composition
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
JP4590821B2 (en) * 2003-01-14 2010-12-01 コニカミノルタホールディングス株式会社 Actinic ray curable ink composition and image forming method using the same
JP4366947B2 (en) * 2003-02-13 2009-11-18 コニカミノルタホールディングス株式会社 Actinic ray curable ink composition and image forming method using the same
US7122294B2 (en) * 2003-05-22 2006-10-17 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions
JP4347110B2 (en) * 2003-10-22 2009-10-21 東京応化工業株式会社 Positive resist composition for electron beam or EUV
JP2005215112A (en) * 2004-01-28 2005-08-11 Tokyo Ohka Kogyo Co Ltd Negative resist composition and method for forming resist pattern
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
US7776504B2 (en) * 2004-02-23 2010-08-17 Nissan Chemical Industries, Ltd. Dye-containing resist composition and color filter using same
WO2005089355A2 (en) * 2004-03-16 2005-09-29 Cornell Research Foundation, Inc. Environmentally friendly photoacid generators (pags) with no perfluorooctyl sulfonates (pfos)
KR100574495B1 (en) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 Photoacid generator polymer, preparation method thereof, and upper anti-reflective coating composition containing same
JP4452632B2 (en) * 2005-01-24 2010-04-21 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
JP4774996B2 (en) * 2005-07-26 2011-09-21 Jsr株式会社 Radiation sensitive resin composition
JP4905667B2 (en) * 2005-10-31 2012-03-28 信越化学工業株式会社 Novel sulfonate and derivative thereof, photoacid generator, resist material and pattern forming method using the same
EP1780198B1 (en) 2005-10-31 2011-10-05 Shin-Etsu Chemical Co., Ltd. Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
JP4905666B2 (en) * 2005-10-31 2012-03-28 信越化学工業株式会社 Novel sulfonate and derivative thereof, photoacid generator, resist material and pattern forming method using the same
EP1780199B1 (en) 2005-10-31 2012-02-01 Shin-Etsu Chemical Co., Ltd. Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
WO2007124092A2 (en) * 2006-04-21 2007-11-01 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
JP4548616B2 (en) 2006-05-15 2010-09-22 信越化学工業株式会社 Thermal acid generator, resist underlayer film material containing the same, and pattern formation method using this resist underlayer film material
JP5124806B2 (en) 2006-06-27 2013-01-23 信越化学工業株式会社 Photoacid generator, resist material and pattern forming method using the same
JP5124805B2 (en) * 2006-06-27 2013-01-23 信越化学工業株式会社 Photoacid generator, resist material and pattern forming method using the same
JP4718390B2 (en) * 2006-08-01 2011-07-06 信越化学工業株式会社 Resist underlayer film material, resist underlayer film substrate using the same, and pattern forming method
US7527912B2 (en) * 2006-09-28 2009-05-05 Shin-Etsu Chemical Co., Ltd. Photoacid generators, resist compositions, and patterning process
US7569326B2 (en) 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
JP4355725B2 (en) 2006-12-25 2009-11-04 信越化学工業株式会社 Positive resist material and pattern forming method
JP5019071B2 (en) 2007-09-05 2012-09-05 信越化学工業株式会社 Novel photoacid generator, resist material and pattern forming method using the same
JP5347349B2 (en) * 2007-09-18 2013-11-20 セントラル硝子株式会社 Process for producing 2-bromo-2,2-difluoroethanol and 2- (alkylcarbonyloxy) -1,1-difluoroethanesulfonates
US8283106B2 (en) 2007-11-01 2012-10-09 Central Glass Company, Limited Sulfonic acid salt and derivative thereof, photoacid generator agent, and resist material and pattern formation method using the photoacid generator agent
US8039194B2 (en) * 2008-01-08 2011-10-18 Internatinal Business Machines Corporation Photoacid generators for extreme ultraviolet lithography
US7968276B2 (en) * 2008-01-15 2011-06-28 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
JP4513990B2 (en) 2008-01-18 2010-07-28 信越化学工業株式会社 Positive resist material and pattern forming method
JP4844761B2 (en) 2008-01-18 2011-12-28 信越化学工業株式会社 Positive resist material and pattern forming method
JP4513989B2 (en) 2008-01-18 2010-07-28 信越化学工業株式会社 Positive resist material and pattern forming method
JP5131482B2 (en) * 2008-02-13 2013-01-30 信越化学工業株式会社 Positive resist material and pattern forming method
EP2101217B1 (en) 2008-03-14 2011-05-11 Shin-Etsu Chemical Co., Ltd. Sulfonium salt-containing polymer, resist compositon, and patterning process
JP5245956B2 (en) * 2008-03-25 2013-07-24 信越化学工業株式会社 Novel photoacid generator, resist material and pattern forming method using the same
US8163461B2 (en) * 2008-04-09 2012-04-24 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
JP4998746B2 (en) 2008-04-24 2012-08-15 信越化学工業株式会社 Polymer compound containing sulfonium salt, resist material, and pattern forming method
JP4569786B2 (en) 2008-05-01 2010-10-27 信越化学工業株式会社 Novel photoacid generator, resist material and pattern forming method using the same
JP5746818B2 (en) * 2008-07-09 2015-07-08 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
JP5201363B2 (en) 2008-08-28 2013-06-05 信越化学工業株式会社 Sulfonium salt and polymer compound having polymerizable anion, resist material and pattern forming method
TWI400226B (en) 2008-10-17 2013-07-01 Shinetsu Chemical Co Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process
KR100998503B1 (en) * 2008-10-30 2010-12-07 금호석유화학 주식회사 Acid generators containing aromatic rings
JP4813537B2 (en) 2008-11-07 2011-11-09 信越化学工業株式会社 Resist underlayer material containing thermal acid generator, resist underlayer film forming substrate, and pattern forming method
CN101930173B (en) 2009-06-22 2014-05-14 罗门哈斯电子材料有限公司 Photoacid generators and photoresists comprising same
JP5287552B2 (en) * 2009-07-02 2013-09-11 信越化学工業株式会社 Photoacid generator, resist material and pattern forming method
JP5675125B2 (en) 2009-09-30 2015-02-25 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, and pattern formation method using the photosensitive composition
EP2332960B1 (en) 2009-12-10 2016-08-10 Rohm and Haas Electronic Materials LLC Cholate photoacid generators and photoresists comprising same
EP2360153B1 (en) 2009-12-10 2015-04-08 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
JP5851688B2 (en) 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Photosensitive composition
JP5216032B2 (en) 2010-02-02 2013-06-19 信越化学工業株式会社 Novel sulfonium salt, polymer compound, method for producing polymer compound, resist material and pattern forming method
CN102781911B (en) 2010-02-24 2015-07-22 巴斯夫欧洲公司 Latent acids and their use
JP5969171B2 (en) * 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Photoacid generator and photoresist containing the same
JP5782283B2 (en) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Novel polymer and photoresist compositions
JP5756672B2 (en) 2010-04-27 2015-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Photoacid generator and photoresist containing the same
JP5491450B2 (en) 2011-05-30 2014-05-14 信越化学工業株式会社 A polymer compound, a chemically amplified resist material, and a pattern forming method using the chemically amplified resist material.
JP5411893B2 (en) 2011-05-30 2014-02-12 信越化学工業株式会社 Sulfonium salt, polymer compound, chemically amplified resist composition and resist pattern forming method using the polymer compound
US9223208B2 (en) * 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
JP5668710B2 (en) 2012-02-27 2015-02-12 信越化学工業株式会社 POLYMER COMPOUND, RESIST MATERIAL CONTAINING SAME, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING THE POLYMER COMPOUND
JP2013173855A (en) 2012-02-27 2013-09-05 Shin-Etsu Chemical Co Ltd Method for producing polymer compound, polymer compound produced by the production method, resist material containing the same and method for forming pattern
JP6013218B2 (en) 2012-02-28 2016-10-25 信越化学工業株式会社 Acid generator, chemically amplified resist material, and pattern forming method
JP5615860B2 (en) 2012-03-07 2014-10-29 信越化学工業株式会社 Acid generator, chemically amplified resist material, and pattern forming method
WO2013146812A1 (en) 2012-03-27 2013-10-03 富士フイルム株式会社 Active-light-sensitive or radiation-sensitive composition, and resist film, resist coating mask blank, resist pattern formation method, and photomask employing same
KR102537349B1 (en) 2015-02-02 2023-05-26 바스프 에스이 Potential Acids and Their Uses
JP2020011463A (en) * 2018-07-19 2020-01-23 京セラドキュメントソリューションズ株式会社 Pretreatment liquid for inkjet recording, inkjet recording device and image formation method
KR102080079B1 (en) * 2018-10-30 2020-02-21 인하대학교 산학협력단 Highly fluorinated monomolecular photoresist having solubility in high fluorine solvent and method of forming pattern using the same
US12134690B2 (en) * 2019-12-31 2024-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist composition and method of manufacturing a semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE295421C (en)
JPS59184152A (en) * 1983-04-01 1984-10-19 Japan Synthetic Rubber Co Ltd Method for producing sulfonated products
JP2696544B2 (en) * 1988-12-21 1998-01-14 大塚化学株式会社 Fluoroalkylsulfonic acids and their uses
DE3929985A1 (en) * 1989-09-08 1991-03-14 Henkel Kgaa METHOD FOR PRODUCING SHORT CHAIN ALKANESULPHONIC ACIDS FROM OLEFINS
DD295421A5 (en) * 1990-06-19 1991-10-31 Humboldt-Universitaet Zu Berlin,Direktorat Fuer Forschung,De POSITIVE WORKING PHOTO COPIER PAINT WITH CHEMICAL REINFORCEMENT
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
DE4227027A1 (en) * 1992-08-14 1994-02-17 Bayer Ag Process for the preparation of 2-aryl-ethane-sulfonic acids
JPH06213855A (en) * 1993-01-20 1994-08-05 Unisia Jecs Corp Apparatus for determining fuel nature
US5488147A (en) * 1994-07-21 1996-01-30 Minnesota Mining And Manufacturing Company Diaryliodonium fluoroalkyl sulfonate salts and a method of making
JPH10130178A (en) * 1996-09-06 1998-05-19 Chisso Corp Production of gem-difluoroolefins, zirconocene for the production, and production thereof
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
US6280911B1 (en) * 1998-09-10 2001-08-28 Shipley Company, L.L.C. Photoresist compositions comprising blends of ionic and non-ionic photoacid generators
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4262402B2 (en) * 2000-10-20 2009-05-13 富士フイルム株式会社 Positive resist composition
JP2002139838A (en) * 2000-10-31 2002-05-17 Fuji Photo Film Co Ltd Positive type resist composition
WO2002042845A2 (en) * 2000-11-03 2002-05-30 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same

Also Published As

Publication number Publication date
JP5184129B2 (en) 2013-04-17
JP2019207415A (en) 2019-12-05
JP2013080234A (en) 2013-05-02
JP2004531749A (en) 2004-10-14
JP2014225023A (en) 2014-12-04
JP2008174562A (en) 2008-07-31
JP4211971B2 (en) 2009-01-21
JP2017083826A (en) 2017-05-18
WO2002042845A2 (en) 2002-05-30
US20030027061A1 (en) 2003-02-06
JP2020197729A (en) 2020-12-10
JP5918111B2 (en) 2016-05-18
WO2002042845A3 (en) 2004-01-08
US6849374B2 (en) 2005-02-01

Similar Documents

Publication Publication Date Title
AU2002239563A1 (en) Photoacid generators and photoresists comprising same
AU2001286707A1 (en) Photoacid generators and photoresists comprising same
AU2001286956A1 (en) Software development systems and methods
AU2001272014A1 (en) Distributed simulation
AU2001286419A1 (en) Endourethral device and method
AU2002235128A1 (en) Expression miniarrays and uses thereof
AU2002233991A1 (en) Layout generator system and method
AU2001271397A1 (en) Component models
AU2001292265A1 (en) Image creating device and image creating method
AU2000235753A1 (en) Inertial exercise device and exercise method
AU2001280599A1 (en) Compounds and methods
AU2001253418A1 (en) Compounds and methods
AU2002255451A1 (en) Procaryotic libraries and uses
AU2001226961A1 (en) Combustion simulating device
AU2002210726A1 (en) Software development
AU2001259196A1 (en) Structural protection device and method of installing the same
AU2002211717A1 (en) Stresscopins and their uses
EP1170035A3 (en) Method and device for optimizing the use of a tanning-related device
AU2001243394A1 (en) Compounds and methods
AU2001281046A1 (en) Approximating the magntidue and phase of a complex number
AU2001292936A1 (en) Octahydro-indolizines and quinolizines and hexahydro-pyrrolizines
AU2001238706A1 (en) Photoacid generators and photoresists comprising same
AU2001291757A1 (en) Slimming device
AU2001286743A1 (en) Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same
AU2001295185A1 (en) Multiplexing-interleaving and demultiplexing-deinterleaving