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AU2002239350A1 - Multilayer elements containing photoresist compositions and their use in microlithography - Google Patents

Multilayer elements containing photoresist compositions and their use in microlithography

Info

Publication number
AU2002239350A1
AU2002239350A1 AU2002239350A AU3935002A AU2002239350A1 AU 2002239350 A1 AU2002239350 A1 AU 2002239350A1 AU 2002239350 A AU2002239350 A AU 2002239350A AU 3935002 A AU3935002 A AU 3935002A AU 2002239350 A1 AU2002239350 A1 AU 2002239350A1
Authority
AU
Australia
Prior art keywords
microlithography
elements containing
photoresist compositions
containing photoresist
multilayer elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002239350A
Inventor
Larry L. Berger
Frank L. Schadt Iii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of AU2002239350A1 publication Critical patent/AU2002239350A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AU2002239350A 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography Abandoned AU2002239350A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25382200P 2000-11-29 2000-11-29
US60/253,822 2000-11-29
PCT/US2001/044295 WO2002044815A2 (en) 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography

Publications (1)

Publication Number Publication Date
AU2002239350A1 true AU2002239350A1 (en) 2002-06-11

Family

ID=22961841

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002239350A Abandoned AU2002239350A1 (en) 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography

Country Status (7)

Country Link
EP (1) EP1354245A2 (en)
JP (1) JP2004534961A (en)
KR (1) KR20040012689A (en)
CN (1) CN1486449A (en)
AU (1) AU2002239350A1 (en)
TW (1) TW567404B (en)
WO (1) WO2002044815A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004014964A2 (en) * 2002-08-09 2004-02-19 E. I. Du Pont De Nemours And Company PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY
JP2005535780A (en) * 2002-08-09 2005-11-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Photoresist, fluoropolymer and method for 157 nm microlithographic printing
US6830871B2 (en) 2002-08-19 2004-12-14 Fuji Photo Film Co., Ltd. Chemical amplification type resist composition
KR101446926B1 (en) * 2006-02-24 2014-10-07 루브리졸 어드밴스드 머티어리얼스, 인코포레이티드 Polymerizable silicone copolyol macromers and polymers made therefrom
US9659788B2 (en) * 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
JP7395278B2 (en) * 2019-07-31 2023-12-11 日東電工株式会社 Photosensitive composition, device, and device manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0473547A1 (en) * 1990-08-27 1992-03-04 Ciba-Geigy Ag Olefinically unsaturated onium salts
JP4327360B2 (en) * 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Photoresist, polymer and microlithography methods
CN1251022C (en) * 1998-10-27 2006-04-12 纳幕尔杜邦公司 Photoresists and associated processes for microlitho graphy
AU4678100A (en) * 1999-05-04 2000-11-17 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography

Also Published As

Publication number Publication date
CN1486449A (en) 2004-03-31
KR20040012689A (en) 2004-02-11
JP2004534961A (en) 2004-11-18
TW567404B (en) 2003-12-21
WO2002044815A3 (en) 2003-08-14
EP1354245A2 (en) 2003-10-22
WO2002044815A2 (en) 2002-06-06

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