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AU2001238611A1 - Surface-emitting semiconductor optical amplifier - Google Patents

Surface-emitting semiconductor optical amplifier

Info

Publication number
AU2001238611A1
AU2001238611A1 AU2001238611A AU3861101A AU2001238611A1 AU 2001238611 A1 AU2001238611 A1 AU 2001238611A1 AU 2001238611 A AU2001238611 A AU 2001238611A AU 3861101 A AU3861101 A AU 3861101A AU 2001238611 A1 AU2001238611 A1 AU 2001238611A1
Authority
AU
Australia
Prior art keywords
optical amplifier
semiconductor optical
emitting semiconductor
emitting
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001238611A
Inventor
Wei-Ping Huang
Xun Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanovation Technologies Inc
Original Assignee
Nanovation Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanovation Technologies Inc filed Critical Nanovation Technologies Inc
Publication of AU2001238611A1 publication Critical patent/AU2001238611A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004Confining in the direction perpendicular to the layer structure
    • H01S5/2018Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027Concatenated amplifiers, i.e. amplifiers in series or cascaded
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
AU2001238611A 2000-02-17 2001-02-20 Surface-emitting semiconductor optical amplifier Abandoned AU2001238611A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18331700P 2000-02-17 2000-02-17
US60/183,317 2000-02-17
PCT/US2001/005568 WO2001061805A1 (en) 2000-02-17 2001-02-20 Surface-emitting semiconductor optical amplifier

Publications (1)

Publication Number Publication Date
AU2001238611A1 true AU2001238611A1 (en) 2001-08-27

Family

ID=22672312

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001238611A Abandoned AU2001238611A1 (en) 2000-02-17 2001-02-20 Surface-emitting semiconductor optical amplifier

Country Status (4)

Country Link
US (1) US20010036009A1 (en)
AU (1) AU2001238611A1 (en)
CA (1) CA2400516A1 (en)
WO (1) WO2001061805A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7103245B2 (en) 2000-07-10 2006-09-05 Massachusetts Institute Of Technology High density integrated optical chip
US20030007207A1 (en) * 2001-04-21 2003-01-09 Peter Healey Optical signal transmitter
GB2384617B (en) * 2001-10-15 2005-06-22 Arima Optoelectronic Semiconductor laser diodes
US6934427B2 (en) 2002-03-12 2005-08-23 Enablence Holdings Llc High density integrated optical chip with low index difference waveguide functions
JP2005064051A (en) * 2003-08-14 2005-03-10 Fibest Ltd Optical module and optical communication system
US20140270634A1 (en) * 2013-03-13 2014-09-18 Gary Evan Miller Multi- purpose apparatus for switching, amplifying, replicating, and monitoring optical signals on a multiplicity of optical fibers
JP2021009895A (en) * 2019-06-28 2021-01-28 住友電気工業株式会社 Surface emitting laser
CN118330818B (en) * 2024-04-25 2024-12-10 西安奇芯光电科技有限公司 1 XN optical switch structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312879A (en) * 1988-06-09 1989-12-18 Nec Corp Surface type semiconductor light amplifier
JPH0460522A (en) * 1990-06-29 1992-02-26 Toshiba Corp Semiconductor optical amplifier
DE4304993A1 (en) * 1993-02-18 1994-08-25 Sel Alcatel Ag Process for producing a cascaded optical room switch and cascaded optical room switch produced by this process
US5657148A (en) * 1996-05-07 1997-08-12 Lucent Technologies Inc. Apparatus and method for a single-port modulator having amplification
US5970081A (en) * 1996-09-17 1999-10-19 Kabushiki Kaisha Toshiba Grating coupled surface emitting device

Also Published As

Publication number Publication date
WO2001061805A1 (en) 2001-08-23
US20010036009A1 (en) 2001-11-01
WO2001061805A9 (en) 2002-10-17
CA2400516A1 (en) 2001-08-23

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