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AU2001238696A1 - Method of reducing defects - Google Patents

Method of reducing defects

Info

Publication number
AU2001238696A1
AU2001238696A1 AU2001238696A AU3869601A AU2001238696A1 AU 2001238696 A1 AU2001238696 A1 AU 2001238696A1 AU 2001238696 A AU2001238696 A AU 2001238696A AU 3869601 A AU3869601 A AU 3869601A AU 2001238696 A1 AU2001238696 A1 AU 2001238696A1
Authority
AU
Australia
Prior art keywords
reducing defects
defects
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001238696A
Inventor
Joseph F. Lachowski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2001238696A1 publication Critical patent/AU2001238696A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
AU2001238696A 2000-02-26 2001-02-26 Method of reducing defects Abandoned AU2001238696A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18534300P 2000-02-26 2000-02-26
US60185343 2000-02-26
PCT/US2001/006119 WO2001063365A1 (en) 2000-02-26 2001-02-26 Method of reducing defects

Publications (1)

Publication Number Publication Date
AU2001238696A1 true AU2001238696A1 (en) 2001-09-03

Family

ID=22680598

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001238696A Abandoned AU2001238696A1 (en) 2000-02-26 2001-02-26 Method of reducing defects

Country Status (7)

Country Link
US (1) US6670107B2 (en)
EP (1) EP1264216B1 (en)
JP (1) JP4817579B2 (en)
KR (1) KR100729992B1 (en)
AU (1) AU2001238696A1 (en)
TW (1) TW558736B (en)
WO (1) WO2001063365A1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US20040029395A1 (en) * 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP2001023893A (en) * 1999-07-12 2001-01-26 Nec Corp Method of forming photoresist pattern
SE518642C2 (en) * 2000-07-11 2002-11-05 Mydata Automation Ab Method, device for providing a substrate with viscous medium, device for correcting application errors and the use of projecting means for correcting application errors
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
US6641986B1 (en) * 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
US7138199B2 (en) * 2002-10-30 2006-11-21 Mohapatra Satish C Fuel cell and fuel cell coolant compositions
US20040220066A1 (en) * 2003-05-01 2004-11-04 Rohm And Haas Electronic Materials, L.L.C. Stripper
US7498124B2 (en) * 2003-09-30 2009-03-03 Tokyo Electron Limited Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process
JP2006030483A (en) * 2004-07-14 2006-02-02 Tokyo Electron Ltd Rinse processing method and development processing method
JP2006059918A (en) * 2004-08-18 2006-03-02 Tokyo Electron Ltd Development processing method
DE102005002550B4 (en) 2005-01-19 2007-02-08 Infineon Technologies Ag Lift-off method
JP4767829B2 (en) * 2006-01-11 2011-09-07 東京応化工業株式会社 Lithographic cleaning agent and resist pattern forming method using the same
KR20080069252A (en) * 2006-01-11 2008-07-25 토쿄오오카코교 가부시기가이샤 Cleaning Agent for Lithography and Resist Pattern Forming Method Using The Same
KR100835485B1 (en) * 2006-05-11 2008-06-04 주식회사 하이닉스반도체 Method of manufacturing semiconductor device using immersion lithography process
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) * 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US9334161B2 (en) * 2009-10-02 2016-05-10 Mitsubishi Gas Chemical Company, Inc. Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same
JP5115766B2 (en) * 2010-04-05 2013-01-09 日信化学工業株式会社 Resist cleaning agent
SG11201500098XA (en) 2012-07-10 2015-02-27 Basf Se Compositions for anti pattern collapse treatment comprising gemini additives
JP6106990B2 (en) * 2012-08-27 2017-04-05 富士通株式会社 Lithographic rinse agent, resist pattern forming method, and semiconductor device manufacturing method
EP2932525B1 (en) 2012-12-14 2018-06-13 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824769A (en) * 1984-10-15 1989-04-25 Allied Corporation High contrast photoresist developer
US4613561A (en) * 1984-10-17 1986-09-23 James Marvin Lewis Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
US5543268A (en) 1992-05-14 1996-08-06 Tokyo Ohka Kogyo Co., Ltd. Developer solution for actinic ray-sensitive resist
US5741621A (en) * 1994-01-10 1998-04-21 E. I. Du Pont De Nemours And Company Process for using photoimageable films prepared for aqueous photoimageable liquid emulsions
DE4419166A1 (en) * 1994-06-01 1995-12-07 Hoechst Ag Developer for photoresist layers
KR0174316B1 (en) * 1994-07-05 1999-04-01 모리시다 요이치 Method of forming micropatterns
JP2656913B2 (en) * 1994-07-05 1997-09-24 松下電器産業株式会社 Fine pattern forming method
US5783082A (en) * 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
JP4006548B2 (en) 1997-03-12 2007-11-14 三菱瓦斯化学株式会社 Semiconductor circuit cleaning agent and method of manufacturing semiconductor circuit using the same
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
US5977041A (en) * 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
EP0933684A1 (en) * 1998-01-22 1999-08-04 Toyo Boseki Kabushiki Kaisha Developing system of photosensitive resin plates and apparatus used therein
US6017766A (en) * 1998-01-28 2000-01-25 Clariant Finance (Bvi) Limited Process for measuring concentration of nonionic surfactants in an aqueous alkaline solution
JP4027494B2 (en) * 1998-04-07 2007-12-26 花王株式会社 Rinse composition
AU3386599A (en) * 1998-04-15 1999-11-01 Etec Systems, Inc. Photoresist developer and method of development
DE69941088D1 (en) * 1998-05-18 2009-08-20 Mallinckrodt Baker Inc ALKALINE, SILICATE-CONTAINING CLEANING SOLUTIONS FOR MICROELECTRONIC SUBSTRATES
US6127101A (en) * 1999-10-12 2000-10-03 Air Products And Chemicals, Inc. Alkylated aminoalkylpiperazine surfactants and their use in photoresist developers
US6235820B1 (en) * 1999-10-12 2001-05-22 Air Products And Chemicals, Inc. Alkylated aminoalkylpiperazine surfactants
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
US6274296B1 (en) 2000-06-08 2001-08-14 Shipley Company, L.L.C. Stripper pretreatment

Also Published As

Publication number Publication date
JP4817579B2 (en) 2011-11-16
TW558736B (en) 2003-10-21
US6670107B2 (en) 2003-12-30
EP1264216B1 (en) 2011-10-12
US20020001780A1 (en) 2002-01-03
KR100729992B1 (en) 2007-06-20
JP2003524213A (en) 2003-08-12
WO2001063365A1 (en) 2001-08-30
EP1264216A1 (en) 2002-12-11
KR20030034045A (en) 2003-05-01

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