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AU2001292580A1 - Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium - Google Patents

Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium

Info

Publication number
AU2001292580A1
AU2001292580A1 AU2001292580A AU9258001A AU2001292580A1 AU 2001292580 A1 AU2001292580 A1 AU 2001292580A1 AU 2001292580 A AU2001292580 A AU 2001292580A AU 9258001 A AU9258001 A AU 9258001A AU 2001292580 A1 AU2001292580 A1 AU 2001292580A1
Authority
AU
Australia
Prior art keywords
shockwaves
medium
applying controlled
thermal spikes
controlled succession
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001292580A
Inventor
Sveinn Olafsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ERNEST KENNEY J
Original Assignee
ERNEST KENNEY J
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ERNEST KENNEY J filed Critical ERNEST KENNEY J
Publication of AU2001292580A1 publication Critical patent/AU2001292580A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
    • B01J19/085—Electron beams only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/70—Cleaning, e.g. for reuse
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Plasma & Fusion (AREA)
  • General Health & Medical Sciences (AREA)
  • Composite Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • ing And Chemical Polishing (AREA)
AU2001292580A 2000-09-26 2001-09-24 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium Abandoned AU2001292580A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09670028 2000-09-26
US09/670,028 US6730370B1 (en) 2000-09-26 2000-09-26 Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium
PCT/US2001/027729 WO2002026400A1 (en) 2000-09-26 2001-09-24 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium

Publications (1)

Publication Number Publication Date
AU2001292580A1 true AU2001292580A1 (en) 2002-04-08

Family

ID=24688678

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001292580A Abandoned AU2001292580A1 (en) 2000-09-26 2001-09-24 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium

Country Status (5)

Country Link
US (2) US6730370B1 (en)
EP (1) EP1345704A4 (en)
JP (1) JP2004509747A (en)
AU (1) AU2001292580A1 (en)
WO (1) WO2002026400A1 (en)

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US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US20080226535A1 (en) * 2004-05-20 2008-09-18 Korea Advanced Institute Of Science And Technology Method and Apparatus for Manufacturing Carbon Nano Tube
WO2007024204A2 (en) 2004-07-19 2007-03-01 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
US20060275537A1 (en) * 2005-06-02 2006-12-07 The Regents Of The University Of California Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures
EP1910217A2 (en) * 2005-07-19 2008-04-16 PINKERTON, Joseph P. Heat activated nanometer-scale pump
US8385113B2 (en) 2007-04-03 2013-02-26 Cjp Ip Holdings, Ltd. Nanoelectromechanical systems and methods for making the same
US8314357B2 (en) * 2009-05-08 2012-11-20 Children's Hospital And Research Center At Oakland Joule heated nanowire biosensors
US11895931B2 (en) * 2017-11-28 2024-02-06 International Business Machines Corporation Frequency tuning of multi-qubit systems

Family Cites Families (27)

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US3663788A (en) 1966-06-11 1972-05-16 Inoue K Kinetic deposition of particles
US4131524A (en) 1969-11-24 1978-12-26 U.S. Philips Corporation Manufacture of semiconductor devices
US3727296A (en) 1970-01-29 1973-04-17 B Cranston Explosive bonding of workpieces
US3713213A (en) 1970-01-29 1973-01-30 Western Electric Co Explosive bonding of workpieces
US3628184A (en) 1970-03-02 1971-12-14 Ibm Superconducting oscillators and method for making the same
US3720598A (en) 1970-12-31 1973-03-13 Ibm Cryogenic arc furnace and method of forming materials
CH643397A5 (en) 1979-09-20 1984-05-30 Ibm GRID TUNNEL MICROSCOPE.
US4520252A (en) 1981-07-07 1985-05-28 Inoue-Japax Research Incorporated Traveling-wire EDM method and apparatus with a cooled machining fluid
US4566937A (en) 1984-10-10 1986-01-28 The United States Of America As Represented By The United States Department Of Energy Electron beam enhanced surface modification for making highly resolved structures
US4731515A (en) 1986-10-22 1988-03-15 Systems Research Laboratories, Inc. Method of making powders by electro-discharge machining in a cryogenic dielectric
EP0318037A3 (en) * 1987-11-27 1990-07-25 Sony Corporation Method for forming a fine pattern by using a patterned resist layer
NL8802335A (en) 1988-09-21 1990-04-17 Philips Nv METHOD AND APPARATUS FOR PROCESSING A MATERIAL SURFACE ON SUB-MIKRON SCALE
US4994140A (en) * 1989-01-10 1991-02-19 Optoelectronics Technology Research Corporation Method capable of forming a fine pattern without crystal defects
US4896044A (en) 1989-02-17 1990-01-23 Purdue Research Foundation Scanning tunneling microscope nanoetching method
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
US5837332A (en) 1989-11-19 1998-11-17 Nihon Victor Kabushiki-Kaisha Method and apparatus for preparing crystal thin films by using a surface acoustic wave
US5043578A (en) 1990-04-05 1991-08-27 International Business Machines Corporation Writing atomic scale features with fine tip as source of deposited atoms
US5047649A (en) 1990-10-09 1991-09-10 International Business Machines Corporation Method and apparatus for writing or etching narrow linewidth patterns on insulating materials
US5352330A (en) 1992-09-30 1994-10-04 Texas Instruments Incorporated Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
JP3212755B2 (en) 1993-05-19 2001-09-25 株式会社東芝 Method for producing needle-like substance and method for producing micro-emitter array
US6063243A (en) * 1995-02-14 2000-05-16 The Regents Of The Univeristy Of California Method for making nanotubes and nanoparticles
US5728261A (en) 1995-05-26 1998-03-17 University Of Houston Magnetically enhanced radio frequency reactive ion etching method and apparatus
US5534311A (en) 1995-05-31 1996-07-09 The United States Of America As Represented By The Secretary Of The Navy Production of structures by electrostatically-focused deposition
US5648128A (en) 1996-06-06 1997-07-15 National Science Council Method for enhancing the growth rate of a silicon dioxide layer grown by liquid phase deposition
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Also Published As

Publication number Publication date
US6730370B1 (en) 2004-05-04
WO2002026400A8 (en) 2002-06-20
EP1345704A4 (en) 2006-03-15
WO2002026400A1 (en) 2002-04-04
US20040221812A1 (en) 2004-11-11
EP1345704A1 (en) 2003-09-24
JP2004509747A (en) 2004-04-02

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