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AU2001291776A1 - Multicrystalline laser-crystallized silicon thin layer solar cell deposited on aglass substrate - Google Patents

Multicrystalline laser-crystallized silicon thin layer solar cell deposited on aglass substrate

Info

Publication number
AU2001291776A1
AU2001291776A1 AU2001291776A AU9177601A AU2001291776A1 AU 2001291776 A1 AU2001291776 A1 AU 2001291776A1 AU 2001291776 A AU2001291776 A AU 2001291776A AU 9177601 A AU9177601 A AU 9177601A AU 2001291776 A1 AU2001291776 A1 AU 2001291776A1
Authority
AU
Australia
Prior art keywords
layer
doped
multicrystalline
laser
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001291776A
Inventor
Gudrun Andra
Fritz Falk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institut fuer Physikalische Hochtechnologie eV
Original Assignee
Institut fuer Physikalische Hochtechnologie eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut fuer Physikalische Hochtechnologie eV filed Critical Institut fuer Physikalische Hochtechnologie eV
Publication of AU2001291776A1 publication Critical patent/AU2001291776A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The invention relates to a multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate (a), which is configured for illuminating from the substrate side, and to a production method for the cell. Said solar cell comprises a laser-crystallized multicrystalline silicon layer (b 1 , b 2 ), whose lower layer region (b 1 ), which is situated on the substrate (a) and provided as a nucleation layer and, at the same time, as a lower transparent electrode, is p-doped (alternatively, n-doped). The silicon layer's second layer region (b 2 ), which faces away from the substrate is p-doped (alternatively, n-doped) less than the nucleation layer and serves as an absorber layer. The edge lengths of the crystallites in the multicrystalline layer (b 1 , b 2 ) are longer than the layer is thick. The inventive solar cell also comprises a laser-crystallized, n-doped (alternatively, p-doped) silicon layer (c), which is located on the silicon layer (b 1 , b 2 ) and which serves as an emitter layer, and comprises a back-reflecting contact layer (A 1 ) that serves as an upper electrode on the emitter layer (c).
AU2001291776A 2000-08-31 2001-08-20 Multicrystalline laser-crystallized silicon thin layer solar cell deposited on aglass substrate Abandoned AU2001291776A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10042733 2000-08-31
DE10042733A DE10042733A1 (en) 2000-08-31 2000-08-31 Multicrystalline laser-crystallized silicon thin-film solar cell on a transparent substrate
PCT/EP2001/009571 WO2002019437A2 (en) 2000-08-31 2001-08-20 Multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate

Publications (1)

Publication Number Publication Date
AU2001291776A1 true AU2001291776A1 (en) 2002-03-13

Family

ID=7654394

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001291776A Abandoned AU2001291776A1 (en) 2000-08-31 2001-08-20 Multicrystalline laser-crystallized silicon thin layer solar cell deposited on aglass substrate

Country Status (8)

Country Link
US (1) US7091411B2 (en)
EP (1) EP1314208B1 (en)
JP (1) JP2004508719A (en)
AT (1) ATE358335T1 (en)
AU (1) AU2001291776A1 (en)
DE (2) DE10042733A1 (en)
ES (1) ES2284693T3 (en)
WO (1) WO2002019437A2 (en)

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Also Published As

Publication number Publication date
US7091411B2 (en) 2006-08-15
DE50112272D1 (en) 2007-05-10
JP2004508719A (en) 2004-03-18
DE10042733A1 (en) 2002-03-28
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