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AU2001288953A1 - Novel polymers and photoresist compositions comprising labile polymers backbonesfor short wave imaging - Google Patents

Novel polymers and photoresist compositions comprising labile polymers backbonesfor short wave imaging

Info

Publication number
AU2001288953A1
AU2001288953A1 AU2001288953A AU8895301A AU2001288953A1 AU 2001288953 A1 AU2001288953 A1 AU 2001288953A1 AU 2001288953 A AU2001288953 A AU 2001288953A AU 8895301 A AU8895301 A AU 8895301A AU 2001288953 A1 AU2001288953 A1 AU 2001288953A1
Authority
AU
Australia
Prior art keywords
polymers
backbonesfor
short wave
photoresist compositions
wave imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288953A
Inventor
Sungseo Cho
Peter Trefonas
Anthony Zampini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2001288953A1 publication Critical patent/AU2001288953A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU2001288953A 2000-09-08 2001-09-08 Novel polymers and photoresist compositions comprising labile polymers backbonesfor short wave imaging Abandoned AU2001288953A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23139200P 2000-09-08 2000-09-08
US60231392 2000-09-08
PCT/US2001/028207 WO2002021214A2 (en) 2000-09-08 2001-09-08 Use of acetal/ketal polymers in photoresist compositions suitable for short wave imaging

Publications (1)

Publication Number Publication Date
AU2001288953A1 true AU2001288953A1 (en) 2002-03-22

Family

ID=22869045

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288953A Abandoned AU2001288953A1 (en) 2000-09-08 2001-09-08 Novel polymers and photoresist compositions comprising labile polymers backbonesfor short wave imaging

Country Status (3)

Country Link
US (1) US20020037472A1 (en)
AU (1) AU2001288953A1 (en)
WO (1) WO2002021214A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200401164A (en) * 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same
US7138550B2 (en) 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
EP1662320A1 (en) * 2004-11-24 2006-05-31 Rohm and Haas Electronic Materials, L.L.C. Photoresist compositions
JP5703197B2 (en) * 2011-01-18 2015-04-15 富士フイルム株式会社 Chemically amplified resist composition, resist film using the same, resist coating mask blank, resist pattern forming method, photomask, and polymer compound
JP5741284B2 (en) * 2011-07-26 2015-07-01 Jsr株式会社 Radiation-sensitive composition and pattern forming method
JP5954252B2 (en) * 2012-05-16 2016-07-20 信越化学工業株式会社 Resist material and pattern forming method using the same
CN111919174A (en) * 2018-03-27 2020-11-10 东京应化工业株式会社 Method for producing plated molded article
US20230236507A1 (en) * 2022-01-26 2023-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor structure and photoresist composition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3737734A1 (en) * 1987-11-06 1989-05-18 Hoechst Ag RADIATION-SENSITIVE MIXTURE
US4906728A (en) * 1988-04-13 1990-03-06 Hoechst Celanese Corp. Acetal copolymers with backbone bromo functional groups
DE3940965A1 (en) * 1989-12-12 1991-06-13 Basf Ag RADIATION-SENSITIVE MIXTURE AND METHOD FOR PRODUCING RELIEF STRUCTURES
DE4125260A1 (en) * 1991-07-31 1993-02-04 Hoechst Ag OLIGOMER COMPOUNDS WITH SAEURELABLE PROTECTION GROUPS AND THE POSITIVELY WORKING RADIATION-SENSITIVE MIXTURE THEREFORE
KR0164981B1 (en) * 1995-11-28 1999-03-20 김흥기 Alkoxy-Styrene Polymers Containing Acetal Groups, Methods for Making the Chemicals, and Chemically Amplified Photoresist Materials with Alkoxy-Styrene Polymers as Main Components
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
US6090526A (en) * 1996-09-13 2000-07-18 Shipley Company, L.L.C. Polymers and photoresist compositions
US6071670A (en) * 1996-10-11 2000-06-06 Kabushiki Kaisha Toshiba Transparent resin, photosensitive composition, and method of forming a pattern
DE69809387T2 (en) * 1997-09-22 2003-09-11 Clariant Finance (Bvi) Ltd., Road Town METHOD FOR PRODUCING RESIST
US6159653A (en) * 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations

Also Published As

Publication number Publication date
WO2002021214A3 (en) 2002-06-20
WO2002021214A2 (en) 2002-03-14
US20020037472A1 (en) 2002-03-28

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