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AU2001288504A1 - Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor - Google Patents

Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor

Info

Publication number
AU2001288504A1
AU2001288504A1 AU2001288504A AU8850401A AU2001288504A1 AU 2001288504 A1 AU2001288504 A1 AU 2001288504A1 AU 2001288504 A AU2001288504 A AU 2001288504A AU 8850401 A AU8850401 A AU 8850401A AU 2001288504 A1 AU2001288504 A1 AU 2001288504A1
Authority
AU
Australia
Prior art keywords
cleaning
bell jar
epitaxial reactor
barrel epitaxial
barrel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288504A
Inventor
Frank J. Dunn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CXE Equipment Services LLC
Original Assignee
CXE Equipment Services LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CXE Equipment Services LLC filed Critical CXE Equipment Services LLC
Publication of AU2001288504A1 publication Critical patent/AU2001288504A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2001288504A 2000-09-05 2001-08-28 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor Abandoned AU2001288504A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09655602 2000-09-05
US09/655,602 US6738683B1 (en) 2000-09-05 2000-09-05 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
PCT/US2001/026941 WO2002020881A2 (en) 2000-09-05 2001-08-28 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor

Publications (1)

Publication Number Publication Date
AU2001288504A1 true AU2001288504A1 (en) 2002-03-22

Family

ID=24629567

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288504A Abandoned AU2001288504A1 (en) 2000-09-05 2001-08-28 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor

Country Status (6)

Country Link
US (2) US6738683B1 (en)
EP (1) EP1315854B1 (en)
JP (1) JP2004508724A (en)
AU (1) AU2001288504A1 (en)
DE (1) DE60104432D1 (en)
WO (1) WO2002020881A2 (en)

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US6764710B2 (en) 2001-07-18 2004-07-20 Scimed Life Systems, Inc. Light emitting markers for use with substrates
US20050279384A1 (en) * 2004-06-17 2005-12-22 Guidotti Emmanuel P Method and processing system for controlling a chamber cleaning process
DE602009001114D1 (en) * 2008-01-25 2011-06-09 Mitsubishi Materials Corp Reactor cleaning device
JP5136574B2 (en) * 2009-05-01 2013-02-06 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
US20130000672A1 (en) * 2011-06-29 2013-01-03 Memc Electronic Materials, Spa Cleaning tool for polysilicon reactor
US9644268B2 (en) * 2011-08-31 2017-05-09 Alta Devices, Inc. Thermal bridge for chemical vapor deposition reactors
US9218233B2 (en) 2012-07-24 2015-12-22 Paul Venditti Systems and methods for control reliability operations
US9043263B2 (en) 2012-07-24 2015-05-26 General Electric Company Systems and methods for control reliability operations using TMR
US9665090B2 (en) 2012-07-24 2017-05-30 General Electric Company Systems and methods for rule-based control system reliability
US9201113B2 (en) 2012-12-17 2015-12-01 General Electric Company Systems and methods for performing redundancy tests on turbine controls
JP6347543B2 (en) * 2014-06-30 2018-06-27 株式会社日立国際電気 Cleaning method, semiconductor device manufacturing method, substrate processing apparatus, and program
US9912733B2 (en) 2014-07-31 2018-03-06 General Electric Company System and method for maintaining the health of a control system
US11390950B2 (en) * 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
CN114849375B (en) * 2022-04-14 2024-05-03 芯三代半导体科技(苏州)有限公司 Purifying device and equipment for TM (transverse magnetic) cavity of silicon carbide epitaxial equipment
CN115198352B (en) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 Epitaxial growth method and epitaxial wafer

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US4047496A (en) 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4081313A (en) 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
US4421786A (en) 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
JPS6097622A (en) 1983-11-01 1985-05-31 Toshiba Mach Co Ltd Epitaxial device
US4511788A (en) 1983-02-09 1985-04-16 Ushio Denki Kabushiki Kaisha Light-radiant heating furnace
US4496828A (en) 1983-07-08 1985-01-29 Ultra Carbon Corporation Susceptor assembly
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
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Also Published As

Publication number Publication date
EP1315854B1 (en) 2004-07-21
WO2002020881A3 (en) 2002-06-06
JP2004508724A (en) 2004-03-18
US6738683B1 (en) 2004-05-18
EP1315854A2 (en) 2003-06-04
DE60104432D1 (en) 2004-08-26
WO2002020881A2 (en) 2002-03-14
US20040178176A1 (en) 2004-09-16

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