AU2001286970A1 - Planarization of metal container structures - Google Patents
Planarization of metal container structuresInfo
- Publication number
- AU2001286970A1 AU2001286970A1 AU2001286970A AU8697001A AU2001286970A1 AU 2001286970 A1 AU2001286970 A1 AU 2001286970A1 AU 2001286970 A AU2001286970 A AU 2001286970A AU 8697001 A AU8697001 A AU 8697001A AU 2001286970 A1 AU2001286970 A1 AU 2001286970A1
- Authority
- AU
- Australia
- Prior art keywords
- planarization
- metal container
- container structures
- structures
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H10D64/011—
-
- H10W20/033—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/041—Manufacture or treatment of capacitors having no potential barriers
- H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
-
- H10W20/062—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H10P52/403—
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/653,280 US6524912B1 (en) | 2000-08-31 | 2000-08-31 | Planarization of metal container structures |
| US09/653,280 | 2000-08-31 | ||
| PCT/US2001/027138 WO2002019398A2 (en) | 2000-08-31 | 2001-08-31 | Planarization of metal container structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001286970A1 true AU2001286970A1 (en) | 2002-03-13 |
Family
ID=24620202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001286970A Abandoned AU2001286970A1 (en) | 2000-08-31 | 2001-08-31 | Planarization of metal container structures |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6524912B1 (en) |
| JP (1) | JP5093962B2 (en) |
| KR (1) | KR100681088B1 (en) |
| CN (1) | CN100347808C (en) |
| AU (1) | AU2001286970A1 (en) |
| WO (1) | WO2002019398A2 (en) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6511879B1 (en) * | 2000-06-16 | 2003-01-28 | Micron Technology, Inc. | Interconnect line selectively isolated from an underlying contact plug |
| US6524912B1 (en) * | 2000-08-31 | 2003-02-25 | Micron Technology, Inc. | Planarization of metal container structures |
| KR100410981B1 (en) * | 2001-05-18 | 2003-12-12 | 삼성전자주식회사 | Metal Interconnection with Low Resistivity in Semiconductor Device and Method for Forming the Same |
| KR100386414B1 (en) * | 2001-05-24 | 2003-06-09 | 엘지전자 주식회사 | A speaker phone using in a mobile phone and method of removing a howling in a speaker phone |
| US20060060565A9 (en) * | 2002-09-16 | 2006-03-23 | Applied Materials, Inc. | Method of etching metals with high selectivity to hafnium-based dielectric materials |
| JP2004200400A (en) * | 2002-12-18 | 2004-07-15 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
| KR100505450B1 (en) * | 2002-12-26 | 2005-08-05 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device using damascene process |
| US7125815B2 (en) * | 2003-07-07 | 2006-10-24 | Micron Technology, Inc. | Methods of forming a phosphorous doped silicon dioxide comprising layer |
| US6962846B2 (en) * | 2003-11-13 | 2005-11-08 | Micron Technology, Inc. | Methods of forming a double-sided capacitor or a contact using a sacrificial structure |
| US7053010B2 (en) * | 2004-03-22 | 2006-05-30 | Micron Technology, Inc. | Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells |
| KR100648247B1 (en) | 2004-06-07 | 2006-11-24 | 삼성전자주식회사 | Forming method of metal lower electrode of capacitor and selective metal film etching method |
| US7235459B2 (en) * | 2004-08-31 | 2007-06-26 | Micron Technology, Inc. | Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry |
| US7312120B2 (en) * | 2004-09-01 | 2007-12-25 | Micron Technology, Inc. | Method for obtaining extreme selectivity of metal nitrides and metal oxides |
| US7329576B2 (en) * | 2004-09-02 | 2008-02-12 | Micron Technology, Inc. | Double-sided container capacitors using a sacrificial layer |
| US7510966B2 (en) * | 2005-03-07 | 2009-03-31 | Micron Technology, Inc. | Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines |
| US7445996B2 (en) * | 2005-03-08 | 2008-11-04 | Micron Technology, Inc. | Low resistance peripheral contacts while maintaining DRAM array integrity |
| US8012847B2 (en) | 2005-04-01 | 2011-09-06 | Micron Technology, Inc. | Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry |
| US8106438B2 (en) * | 2005-08-22 | 2012-01-31 | Micron Technology, Inc. | Stud capacitor device and fabrication method |
| KR100661217B1 (en) * | 2005-12-29 | 2006-12-22 | 동부일렉트로닉스 주식회사 | Manufacturing Method of Semiconductor Device |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| US7884477B2 (en) * | 2007-12-03 | 2011-02-08 | International Business Machines Corporation | Air gap structure having protective metal silicide pads on a metal feature |
| US8772939B2 (en) * | 2008-08-04 | 2014-07-08 | Micron Technology, Inc. | Polishing systems and methods for removing conductive material from microelectronic substrates |
| US8753933B2 (en) | 2008-11-19 | 2014-06-17 | Micron Technology, Inc. | Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures |
| US8105956B2 (en) * | 2009-10-20 | 2012-01-31 | Micron Technology, Inc. | Methods of forming silicon oxides and methods of forming interlevel dielectrics |
| JP2012156451A (en) * | 2011-01-28 | 2012-08-16 | Elpida Memory Inc | Semiconductor device and manufacturing method thereof |
| US20120315754A1 (en) * | 2011-06-08 | 2012-12-13 | Micron Technology, Inc. | Interconnection barrier material device and method |
| CN107833833B (en) * | 2017-11-28 | 2020-01-21 | 上海华力微电子有限公司 | An etching method for forming contact holes of different depths |
| US10636656B2 (en) * | 2018-04-16 | 2020-04-28 | Globalfoundries Inc. | Methods of protecting structure of integrated circuit from rework |
| EP3958293B1 (en) * | 2020-05-22 | 2024-06-12 | Changxin Memory Technologies, Inc. | Method for preparing a hole in a semiconductor device |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250467A (en) * | 1991-03-29 | 1993-10-05 | Applied Materials, Inc. | Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| JPH08139293A (en) * | 1994-09-17 | 1996-05-31 | Toshiba Corp | Semiconductor substrate |
| US5600182A (en) * | 1995-01-24 | 1997-02-04 | Lsi Logic Corporation | Barrier metal technology for tungsten plug interconnection |
| US5950092A (en) | 1995-06-02 | 1999-09-07 | Micron Technology, Inc. | Use of a plasma source to form a layer during the formation of a semiconductor device |
| US6281562B1 (en) * | 1995-07-27 | 2001-08-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device which reduces the minimum distance requirements between active areas |
| DE19640246A1 (en) * | 1996-09-30 | 1998-04-02 | Siemens Ag | Protected barrier semiconductor device for a stacked cell |
| JPH10242147A (en) * | 1997-02-27 | 1998-09-11 | Toshiba Corp | Semiconductor device and method of manufacturing the same, semiconductor memory device and method of manufacturing the same |
| US6020259A (en) | 1997-05-01 | 2000-02-01 | Mosel Vitelic, Inc. | Method of forming a tungsten-plug contact for a semiconductor device |
| US6255159B1 (en) | 1997-07-14 | 2001-07-03 | Micron Technology, Inc. | Method to form hemispherical grained polysilicon |
| US6346741B1 (en) * | 1997-11-20 | 2002-02-12 | Advanced Technology Materials, Inc. | Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same |
| JPH11238862A (en) * | 1997-12-18 | 1999-08-31 | Hitachi Ltd | Semiconductor integrated circuit device and method of manufacturing the same |
| US6136690A (en) * | 1998-02-13 | 2000-10-24 | Micron Technology, Inc. | In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications |
| JPH11233621A (en) * | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
| JPH11260759A (en) * | 1998-03-12 | 1999-09-24 | Fujitsu Ltd | Method for manufacturing semiconductor device |
| US6207524B1 (en) * | 1998-09-29 | 2001-03-27 | Siemens Aktiengesellschaft | Memory cell with a stacked capacitor |
| JP4074014B2 (en) * | 1998-10-27 | 2008-04-09 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| JP2000228373A (en) * | 1999-02-08 | 2000-08-15 | Oki Electric Ind Co Ltd | Manufacture of electrode |
| US6316353B1 (en) * | 1999-02-18 | 2001-11-13 | Micron Technology, Inc. | Method of forming conductive connections |
| US6445023B1 (en) * | 1999-03-16 | 2002-09-03 | Micron Technology, Inc. | Mixed metal nitride and boride barrier layers |
| US6140241A (en) * | 1999-03-18 | 2000-10-31 | Taiwan Semiconductor Manufacturing Company | Multi-step electrochemical copper deposition process with improved filling capability |
| US6168991B1 (en) * | 1999-06-25 | 2001-01-02 | Lucent Technologies Inc. | DRAM capacitor including Cu plug and Ta barrier and method of forming |
| US6465828B2 (en) * | 1999-07-30 | 2002-10-15 | Micron Technology, Inc. | Semiconductor container structure with diffusion barrier |
| US6265305B1 (en) * | 1999-10-01 | 2001-07-24 | United Microelectronics Corp. | Method of preventing corrosion of a titanium layer in a semiconductor wafer |
| US6858937B2 (en) * | 2000-03-02 | 2005-02-22 | Micron Technology, Inc. | Backend metallization method and device obtained therefrom |
| US6537912B1 (en) * | 2000-08-25 | 2003-03-25 | Micron Technology Inc. | Method of forming an encapsulated conductive pillar |
| US6524912B1 (en) * | 2000-08-31 | 2003-02-25 | Micron Technology, Inc. | Planarization of metal container structures |
| JP2002110799A (en) * | 2000-09-27 | 2002-04-12 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
| US6856626B2 (en) * | 2000-12-18 | 2005-02-15 | Marconi Communications, Inc. | Billing redundant ATM connections |
-
2000
- 2000-08-31 US US09/653,280 patent/US6524912B1/en not_active Expired - Fee Related
-
2001
- 2001-08-31 KR KR1020037003142A patent/KR100681088B1/en not_active Expired - Fee Related
- 2001-08-31 CN CNB018168329A patent/CN100347808C/en not_active Expired - Fee Related
- 2001-08-31 WO PCT/US2001/027138 patent/WO2002019398A2/en not_active Ceased
- 2001-08-31 AU AU2001286970A patent/AU2001286970A1/en not_active Abandoned
- 2001-08-31 JP JP2002524202A patent/JP5093962B2/en not_active Expired - Fee Related
-
2002
- 2002-12-04 US US10/309,114 patent/US7053462B2/en not_active Expired - Fee Related
-
2006
- 2006-03-29 US US11/391,316 patent/US20060170025A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002019398A3 (en) | 2002-08-15 |
| US6524912B1 (en) | 2003-02-25 |
| KR20030040435A (en) | 2003-05-22 |
| JP2004508708A (en) | 2004-03-18 |
| US7053462B2 (en) | 2006-05-30 |
| CN1636262A (en) | 2005-07-06 |
| US20060170025A1 (en) | 2006-08-03 |
| CN100347808C (en) | 2007-11-07 |
| JP5093962B2 (en) | 2012-12-12 |
| KR100681088B1 (en) | 2007-02-08 |
| WO2002019398A2 (en) | 2002-03-07 |
| US20030082903A1 (en) | 2003-05-01 |
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