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AU2001286729A1 - Conductive material patterning methods - Google Patents

Conductive material patterning methods

Info

Publication number
AU2001286729A1
AU2001286729A1 AU2001286729A AU8672901A AU2001286729A1 AU 2001286729 A1 AU2001286729 A1 AU 2001286729A1 AU 2001286729 A AU2001286729 A AU 2001286729A AU 8672901 A AU8672901 A AU 8672901A AU 2001286729 A1 AU2001286729 A1 AU 2001286729A1
Authority
AU
Australia
Prior art keywords
conductive material
patterning methods
material patterning
methods
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001286729A
Inventor
Joseph E. Geusic
Alan R. Reinberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001286729A1 publication Critical patent/AU2001286729A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10W20/039—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • H10P14/46—
    • H10P50/266—
    • H10P95/00—
    • H10W20/031—
    • H10W20/032—
    • H10W20/043—
    • H10W20/044—
    • H10W20/048—
    • H10W20/063—
    • H10W20/065—
    • H10W20/094—
    • H10W20/095—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0315—Oxidising metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1142—Conversion of conductive material into insulating material or into dissolvable compound
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1157—Using means for chemical reduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Laminated Bodies (AREA)
AU2001286729A 2000-08-25 2001-08-24 Conductive material patterning methods Abandoned AU2001286729A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/648,884 2000-08-25
US09/648,884 US6602653B1 (en) 2000-08-25 2000-08-25 Conductive material patterning methods
PCT/US2001/026484 WO2002017387A2 (en) 2000-08-25 2001-08-24 Conductive material patterning methods

Publications (1)

Publication Number Publication Date
AU2001286729A1 true AU2001286729A1 (en) 2002-03-04

Family

ID=24602617

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001286729A Abandoned AU2001286729A1 (en) 2000-08-25 2001-08-24 Conductive material patterning methods

Country Status (3)

Country Link
US (4) US6602653B1 (en)
AU (1) AU2001286729A1 (en)
WO (1) WO2002017387A2 (en)

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US6905979B2 (en) * 2002-12-23 2005-06-14 Intel Corporation Apparatus and method for improving AC coupling on circuit boards
US20060019493A1 (en) * 2004-07-15 2006-01-26 Li Wei M Methods of metallization for microelectronic devices utilizing metal oxide
US7166543B2 (en) * 2004-08-30 2007-01-23 Micron Technology, Inc. Methods for forming an enriched metal oxide surface for use in a semiconductor device
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US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
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US8952612B1 (en) 2006-09-15 2015-02-10 Imaging Systems Technology, Inc. Microdischarge display with fluorescent conversion material
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US8404160B2 (en) 2007-05-18 2013-03-26 Applied Nanotech Holdings, Inc. Metallic ink
KR101544198B1 (en) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 Ruthenium film formation method
US8180078B2 (en) * 2007-12-13 2012-05-15 At&T Intellectual Property I, Lp Systems and methods employing multiple individual wireless earbuds for a common audio source
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8506849B2 (en) 2008-03-05 2013-08-13 Applied Nanotech Holdings, Inc. Additives and modifiers for solvent- and water-based metallic conductive inks
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
JP5740389B2 (en) 2009-03-27 2015-06-24 アプライド・ナノテック・ホールディングス・インコーポレーテッド Buffer layer to enhance photosintering and / or laser sintering
US8422197B2 (en) 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8536056B2 (en) * 2011-08-22 2013-09-17 Nanya Technology Corporation Method of forming conductive pattern
TW201419315A (en) 2012-07-09 2014-05-16 Applied Nanotech Holdings Inc Photosintering of micron-sized copper particles
US9865501B2 (en) 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
US8962466B2 (en) * 2013-03-13 2015-02-24 Macronix International Co., Ltd. Low temperature transition metal oxide for memory device
US20160111342A1 (en) * 2014-10-17 2016-04-21 Lam Research Corporation Method and apparatus for characterizing metal oxide reduction
US10136535B2 (en) 2014-12-24 2018-11-20 Medtronic, Inc. Hermetically-sealed packages including feedthrough assemblies
US9865533B2 (en) 2014-12-24 2018-01-09 Medtronic, Inc. Feedthrough assemblies
US9968794B2 (en) 2014-12-24 2018-05-15 Medtronic, Inc. Implantable medical device system including feedthrough assembly and method of forming same
US9514815B1 (en) 2015-05-13 2016-12-06 Macronix International Co., Ltd. Verify scheme for ReRAM
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
JP6559046B2 (en) 2015-11-04 2019-08-14 東京エレクトロン株式会社 Pattern formation method
US10098589B2 (en) 2015-12-21 2018-10-16 Medtronic, Inc. Sealed package and method of forming same
US9691478B1 (en) 2016-04-22 2017-06-27 Macronix International Co., Ltd. ReRAM array configuration for bipolar operation
US9704919B1 (en) 2016-06-24 2017-07-11 Qualcomm Incorporated High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells
US20200087783A1 (en) * 2016-12-09 2020-03-19 Board Of Regents, The University Of Texas System Patterning metal regions on metal oxide films/metal films by selective reduction/oxidation using localized thermal heating
US9959928B1 (en) 2016-12-13 2018-05-01 Macronix International Co., Ltd. Iterative method and apparatus to program a programmable resistance memory element using stabilizing pulses
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Also Published As

Publication number Publication date
WO2002017387A3 (en) 2002-12-27
US20050282385A1 (en) 2005-12-22
US6602653B1 (en) 2003-08-05
US20070105372A1 (en) 2007-05-10
US7153775B2 (en) 2006-12-26
WO2002017387A9 (en) 2003-10-30
US20030219991A1 (en) 2003-11-27
WO2002017387A2 (en) 2002-02-28
US6972257B2 (en) 2005-12-06

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