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AU2001286087A1 - An optically addressed spin-polarised diode - Google Patents

An optically addressed spin-polarised diode

Info

Publication number
AU2001286087A1
AU2001286087A1 AU2001286087A AU8608701A AU2001286087A1 AU 2001286087 A1 AU2001286087 A1 AU 2001286087A1 AU 2001286087 A AU2001286087 A AU 2001286087A AU 8608701 A AU8608701 A AU 8608701A AU 2001286087 A1 AU2001286087 A1 AU 2001286087A1
Authority
AU
Australia
Prior art keywords
spin
optically addressed
polarised
diode
polarised diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001286087A
Inventor
James Anthony Charles Bland
Atsufumi Hirohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge University Technical Services Ltd CUTS
Original Assignee
Cambridge University Technical Services Ltd CUTS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge University Technical Services Ltd CUTS filed Critical Cambridge University Technical Services Ltd CUTS
Publication of AU2001286087A1 publication Critical patent/AU2001286087A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385Devices using spin-polarised carriers
AU2001286087A 2000-09-12 2001-09-12 An optically addressed spin-polarised diode Abandoned AU2001286087A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0022328.9A GB0022328D0 (en) 2000-09-12 2000-09-12 An optically addressed spin-polarised diode
GB0022328.9 2000-09-12
PCT/GB2001/004088 WO2002023638A2 (en) 2000-09-12 2001-09-12 An optically addressed spin-polarised diode

Publications (1)

Publication Number Publication Date
AU2001286087A1 true AU2001286087A1 (en) 2002-03-26

Family

ID=9899287

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001286087A Abandoned AU2001286087A1 (en) 2000-09-12 2001-09-12 An optically addressed spin-polarised diode

Country Status (3)

Country Link
AU (1) AU2001286087A1 (en)
GB (1) GB0022328D0 (en)
WO (1) WO2002023638A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009102577A1 (en) * 2008-02-13 2009-08-20 University Of Delaware Electromagnetic wave detection methods and apparatus
EP2190022B1 (en) * 2008-11-20 2013-01-02 Hitachi Ltd. Spin-polarised charge carrier device
US8941379B2 (en) 2009-05-14 2015-01-27 University Of Delaware Electromagnetic wave detection systems and methods
FR2959869B1 (en) 2010-05-04 2014-05-02 Thales Sa SPIN POLARIZING RESONANT DIODE FOR OPTOELECTRONIC CONVERSION
ITMI20110211A1 (en) * 2011-02-11 2012-08-12 Milano Politecnico SPINTRONIC OPTICAL DETECTOR DEVICE
KR101633694B1 (en) * 2012-08-09 2016-06-27 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 Spin motor and spin rotary member
US9190500B2 (en) 2012-08-14 2015-11-17 Japan Science And Technology Agency Spin polarization transistor element
CN106847907B (en) * 2017-01-04 2019-09-13 南京大学 A light-tunable vertical spin field effect transistor and its preparation method
CN114018297A (en) * 2021-11-04 2022-02-08 电子科技大学 Two-dimensional ferromagnetic CrI based on magnetic field regulation and control3Fluorescence chiral multi-wavelength magnetic encoder

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3217703B2 (en) * 1995-09-01 2001-10-15 株式会社東芝 Magnetic device and magnetic sensor using the same

Also Published As

Publication number Publication date
WO2002023638A3 (en) 2003-03-13
WO2002023638A2 (en) 2002-03-21
GB0022328D0 (en) 2000-10-25

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