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AU2001284441A1 - Cylindrical target and method of manufacturing the cylindrical target - Google Patents

Cylindrical target and method of manufacturing the cylindrical target

Info

Publication number
AU2001284441A1
AU2001284441A1 AU2001284441A AU8444101A AU2001284441A1 AU 2001284441 A1 AU2001284441 A1 AU 2001284441A1 AU 2001284441 A AU2001284441 A AU 2001284441A AU 8444101 A AU8444101 A AU 8444101A AU 2001284441 A1 AU2001284441 A1 AU 2001284441A1
Authority
AU
Australia
Prior art keywords
cylindrical target
manufacturing
cylindrical
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001284441A
Inventor
Toshihisa Kamiyama
Kouichi Kanda
Hiroshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of AU2001284441A1 publication Critical patent/AU2001284441A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2001284441A 2000-09-08 2001-09-05 Cylindrical target and method of manufacturing the cylindrical target Abandoned AU2001284441A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000273572 2000-09-08
JP2000-273572 2000-09-08
PCT/JP2001/007710 WO2002020866A1 (en) 2000-09-08 2001-09-05 Cylindrical target and method of manufacturing the cylindrical target

Publications (1)

Publication Number Publication Date
AU2001284441A1 true AU2001284441A1 (en) 2002-03-22

Family

ID=18759486

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001284441A Abandoned AU2001284441A1 (en) 2000-09-08 2001-09-05 Cylindrical target and method of manufacturing the cylindrical target

Country Status (8)

Country Link
US (1) US6787011B2 (en)
EP (1) EP1321537A4 (en)
KR (1) KR20030024854A (en)
CN (1) CN1281780C (en)
AU (1) AU2001284441A1 (en)
CA (1) CA2418807A1 (en)
TW (1) TW555874B (en)
WO (1) WO2002020866A1 (en)

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DE10231203B4 (en) 2002-07-10 2009-09-10 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Target support assembly
CN1961094A (en) * 2004-06-02 2007-05-09 应用材料有限公司 Target material and its application in sputtering process
GB0420505D0 (en) 2004-09-14 2004-10-20 Wild Andrew M Apparatus for dispensing surgical clips
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
FR2881757B1 (en) * 2005-02-08 2007-03-30 Saint Gobain THERMAL PROJECTION DEVELOPING METHOD OF TARGET BASED ON SILICON AND ZIRCONIUM
KR100867620B1 (en) 2005-05-25 2008-11-10 삼성전자주식회사 Apparatus and Method for Selecting Users for Space Division Multiple Access in Multiple Input Multiple Output Systems
US20060289304A1 (en) * 2005-06-22 2006-12-28 Guardian Industries Corp. Sputtering target with slow-sputter layer under target material
DE102005029221A1 (en) * 2005-06-22 2006-12-28 W.C. Heraeus Gmbh Adhesive, useful for gluing conductive material, comprises an adhesive component e.g. epoxy resin, and fillers containing fibers or fiber-powder mixture, which are made of an electrically conductive material
EP1752556B1 (en) * 2005-08-02 2007-10-31 Applied Materials GmbH & Co. KG Tubular cathode for use in sputtering.
KR100801311B1 (en) * 2005-08-02 2008-02-05 어플라이드 매터리얼스 게엠베하 운트 컴퍼니 카게 Tube Cathode for Sputtering Process
US8123919B2 (en) * 2005-09-20 2012-02-28 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold
AT8697U1 (en) * 2005-10-14 2006-11-15 Plansee Se TUBE TARGET
US7842355B2 (en) 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
DE102006009749A1 (en) 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH target arrangement
DE102006017455A1 (en) * 2006-04-13 2007-10-25 Applied Materials Gmbh & Co. Kg Tubular cathode for coating materials in a coating process comprises openings provided between a target carrier tube and a target for contacting the target with coolant
JP4680841B2 (en) * 2006-06-29 2011-05-11 日本ピストンリング株式会社 Tubular target for PVD
KR101137906B1 (en) 2006-08-03 2012-05-03 삼성코닝정밀소재 주식회사 Rotatable target assembly
DE102006060512A1 (en) * 2006-12-19 2008-06-26 W.C. Heraeus Gmbh Sputtertargetanordnung
US20080296352A1 (en) * 2007-05-30 2008-12-04 Akihiro Hosokawa Bonding method for cylindrical target
JP5467735B2 (en) 2007-07-02 2014-04-09 東ソー株式会社 Cylindrical sputtering target
EP2276870A4 (en) * 2008-04-14 2012-07-25 Angstrom Sciences Inc Cylindrical magnetron
JP5387118B2 (en) * 2008-06-10 2014-01-15 東ソー株式会社 Cylindrical sputtering target and manufacturing method thereof
US20100101949A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Rotatable sputter target backing cylinder, rotatable sputter target, method of producing a rotatable sputter target, and coating installation
EP2276055A1 (en) * 2009-07-13 2011-01-19 Applied Materials, Inc. Target backing tube, cylindrical target, and cylindrical target assembly
EP2276054A1 (en) * 2009-07-13 2011-01-19 Applied Materials, Inc. Sputtering system, rotatable cylindrical target assembly, backing tube, target element and cooling shield
CN101994088B (en) * 2009-08-31 2012-06-20 光洋应用材料科技股份有限公司 Hollow cylindrical target and its components
DE202009014959U1 (en) * 2009-10-23 2010-10-21 Sindlhauser Materials Gmbh Sputtertargetanordnung
US8951394B2 (en) * 2010-01-29 2015-02-10 Angstrom Sciences, Inc. Cylindrical magnetron having a shunt
US20110203921A1 (en) * 2010-02-19 2011-08-25 Tosoh Smd, Inc. Method of bonding rotatable ceramic targets to a backing structure
EP2365515A1 (en) * 2010-03-09 2011-09-14 Applied Materials, Inc. Rotatable target, backing tube, sputtering installation and method for producing a rotatable target
KR101125557B1 (en) * 2010-03-16 2012-03-22 주식회사 에스에프에이 Apparatus to Sputter
CN101892458A (en) * 2010-06-26 2010-11-24 韶关市欧莱高新材料有限公司 Tubular rotary target material containing electric conduction and heat conduction spring
RU2013103041A (en) 2010-07-12 2014-08-20 Мэтиреон Эдвансд Мэтириэлз Текнолоджиз Энд Сервисез Инк. ROTARY TARGET CONNECTOR ASSEMBLY
US9334563B2 (en) 2010-07-12 2016-05-10 Materion Corporation Direct cooled rotary sputtering target
CN102338598B (en) * 2010-07-19 2014-02-19 光洋应用材料科技股份有限公司 Hollow target components
US20120037500A1 (en) * 2010-08-12 2012-02-16 Solar Applied Materials Technology Corp. Hollow target assembly
AT12695U1 (en) 2011-04-08 2012-10-15 Plansee Se PIPE TARGET WITH PROTECTION DEVICE
CN102242333A (en) * 2011-06-23 2011-11-16 江苏宇天港玻新材料有限公司 Process for manufacturing coated glass by utilizing rotary ceramic target
KR20140108262A (en) * 2011-12-09 2014-09-05 어플라이드 머티어리얼스, 인코포레이티드 Rotatable sputter target
JP5472353B2 (en) * 2012-03-27 2014-04-16 三菱マテリアル株式会社 Silver-based cylindrical target and manufacturing method thereof
JP6089983B2 (en) * 2012-07-18 2017-03-08 三菱マテリアル株式会社 Cylindrical sputtering target and manufacturing method thereof
JP5613805B2 (en) * 2013-09-02 2014-10-29 学校法人金沢工業大学 Zinc oxide-based transparent conductive film, sintered compact target for magnetron sputtering, liquid crystal display and touch panel, and equipment comprising zinc oxide-based transparent conductive film
US10697056B2 (en) 2015-03-18 2020-06-30 Vital Thin Film Materials (Guangdong) Co., Ltd. Methods of forming rotary sputtering target
AT14911U1 (en) 2015-05-06 2016-08-15 Plansee Se tube target
CN107663630A (en) * 2016-07-29 2018-02-06 欧美达应用材料科技股份有限公司 Rotary target material
JP6308278B2 (en) * 2016-10-07 2018-04-11 三菱マテリアル株式会社 Hot extrusion material for cylindrical sputtering target and method for manufacturing cylindrical sputtering target
JP6968300B2 (en) * 2019-06-10 2021-11-17 株式会社アルバック Sputtering target and manufacturing method of sputtering target
CN113293352B (en) * 2021-06-01 2022-05-17 深圳市千禾盛科技有限公司 Low-cost target for vacuum coating
US20240240305A1 (en) * 2021-06-04 2024-07-18 Riken Technos Corporation Composite film manufacturing method and organic/inorganic hybrid film manufacturing method
CN215713338U (en) * 2021-09-16 2022-02-01 攀时（上海）高性能材料有限公司 Sputtering target

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US4356073A (en) 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPS60181270A (en) 1984-02-27 1985-09-14 Matsushita Electric Ind Co Ltd Method for manufacturing sputtering targets
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
JP3651909B2 (en) * 1991-08-28 2005-05-25 旭硝子セラミックス株式会社 Ceramic rotating cathode target and manufacturing method thereof
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US5567512A (en) * 1993-10-08 1996-10-22 Hmt Technology Corporation Thin carbon overcoat and method of its making
JPH07228967A (en) * 1994-02-17 1995-08-29 Mitsubishi Materials Corp Long cylindrical sputtering target
WO1996015283A1 (en) * 1994-11-15 1996-05-23 Tosoh Smd, Inc. Method of bonding targets to backing plate member
JPH09104974A (en) * 1995-10-09 1997-04-22 Sony Miyuujitsuku Entertainment:Kk Sputtering device
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Also Published As

Publication number Publication date
TW555874B (en) 2003-10-01
CA2418807A1 (en) 2003-02-05
US6787011B2 (en) 2004-09-07
CN1452668A (en) 2003-10-29
CN1281780C (en) 2006-10-25
KR20030024854A (en) 2003-03-26
WO2002020866A1 (en) 2002-03-14
EP1321537A1 (en) 2003-06-25
EP1321537A4 (en) 2006-06-07
US20030136662A1 (en) 2003-07-24

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