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AU2001279199A1 - Close coupled match structure for rf drive electrode - Google Patents

Close coupled match structure for rf drive electrode

Info

Publication number
AU2001279199A1
AU2001279199A1 AU2001279199A AU7919901A AU2001279199A1 AU 2001279199 A1 AU2001279199 A1 AU 2001279199A1 AU 2001279199 A AU2001279199 A AU 2001279199A AU 7919901 A AU7919901 A AU 7919901A AU 2001279199 A1 AU2001279199 A1 AU 2001279199A1
Authority
AU
Australia
Prior art keywords
drive electrode
close coupled
match structure
coupled match
close
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001279199A
Inventor
Thomas H. Windhorn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001279199A1 publication Critical patent/AU2001279199A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Combinations Of Printed Boards (AREA)
AU2001279199A 2000-08-17 2001-08-07 Close coupled match structure for rf drive electrode Abandoned AU2001279199A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22574300P 2000-08-17 2000-08-17
US60225743 2000-08-17
PCT/US2001/024571 WO2002015649A2 (en) 2000-08-17 2001-08-07 Close coupled match structure for rf drive electrode

Publications (1)

Publication Number Publication Date
AU2001279199A1 true AU2001279199A1 (en) 2002-02-25

Family

ID=22846045

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001279199A Abandoned AU2001279199A1 (en) 2000-08-17 2001-08-07 Close coupled match structure for rf drive electrode

Country Status (5)

Country Link
US (1) US6657395B2 (en)
JP (1) JP2004506307A (en)
AU (1) AU2001279199A1 (en)
TW (1) TW501381B (en)
WO (1) WO2002015649A2 (en)

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US7480571B2 (en) * 2002-03-08 2009-01-20 Lam Research Corporation Apparatus and methods for improving the stability of RF power delivery to a plasma load
CN1666315A (en) * 2002-07-03 2005-09-07 东京电子株式会社 Method and device for non-invasive measurement and analysis of plasma parameters
US9844127B2 (en) 2014-01-10 2017-12-12 Reno Technologies, Inc. High voltage switching circuit
US9496122B1 (en) 2014-01-10 2016-11-15 Reno Technologies, Inc. Electronically variable capacitor and RF matching network incorporating same
US9865432B1 (en) 2014-01-10 2018-01-09 Reno Technologies, Inc. RF impedance matching network
US9697991B2 (en) 2014-01-10 2017-07-04 Reno Technologies, Inc. RF impedance matching network
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9755641B1 (en) 2014-01-10 2017-09-05 Reno Technologies, Inc. High speed high voltage switching circuit
US9196459B2 (en) 2014-01-10 2015-11-24 Reno Technologies, Inc. RF impedance matching network
US10455729B2 (en) 2014-01-10 2019-10-22 Reno Technologies, Inc. Enclosure cooling system
US9729122B2 (en) 2015-02-18 2017-08-08 Reno Technologies, Inc. Switching circuit
US12119206B2 (en) 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
US11017983B2 (en) 2015-02-18 2021-05-25 Reno Technologies, Inc. RF power amplifier
US9306533B1 (en) 2015-02-20 2016-04-05 Reno Technologies, Inc. RF impedance matching network
US10340879B2 (en) 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
US9525412B2 (en) 2015-02-18 2016-12-20 Reno Technologies, Inc. Switching circuit
US10692699B2 (en) 2015-06-29 2020-06-23 Reno Technologies, Inc. Impedance matching with restricted capacitor switching
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US11342160B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Filter for impedance matching
US11342161B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Switching circuit with voltage bias
US11081316B2 (en) 2015-06-29 2021-08-03 Reno Technologies, Inc. Impedance matching network and method
US11150283B2 (en) 2015-06-29 2021-10-19 Reno Technologies, Inc. Amplitude and phase detection circuit
US10984986B2 (en) 2015-06-29 2021-04-20 Reno Technologies, Inc. Impedance matching network and method
JP6698577B2 (en) * 2017-04-12 2020-05-27 三菱重工機械システム株式会社 High frequency acceleration cavity
US12334307B2 (en) 2017-07-10 2025-06-17 Asm Ip Holding B.V. Power control for rf impedance matching network
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
US12272522B2 (en) 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US10727029B2 (en) 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
US11114280B2 (en) 2017-07-10 2021-09-07 Reno Technologies, Inc. Impedance matching with multi-level power setpoint
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US11315758B2 (en) 2017-07-10 2022-04-26 Reno Technologies, Inc. Impedance matching using electronically variable capacitance and frequency considerations
US10483090B2 (en) 2017-07-10 2019-11-19 Reno Technologies, Inc. Restricted capacitor switching
US11521831B2 (en) 2019-05-21 2022-12-06 Reno Technologies, Inc. Impedance matching network and method with reduced memory requirements

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE886846Q (en) * 1977-11-29 1981-04-16 Mayer Ferdy HIGH FREQUENCY ANTI-PEST WIRE OR CABLE
FR2633399B1 (en) 1988-06-24 1990-08-31 Commissariat Energie Atomique METHOD AND DEVICE FOR DETERMINING THE IMPEDANCE OF A DISCHARGE IN A PLASMA REACTOR ASSOCIATED WITH A TUNING BOX AND APPLICATION TO CONTROLLING THE IMPEDANCE OR ION FLOW IN THIS REACTOR
US5302882A (en) 1991-09-09 1994-04-12 Sematech, Inc. Low pass filter for plasma discharge
EP0609237A1 (en) * 1991-09-09 1994-08-10 Sematech, Inc. Harmonic and subharmonic isolator for plasma discharge
US5849136A (en) 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
DE69304522T2 (en) * 1992-04-16 1997-01-23 Advanced Energy Ind Inc STABILIZER FOR SWITCHING MODE PROVIDED RADIO FREQUENCY PLASMA DEVICE
US5325019A (en) 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
JP3565309B2 (en) * 1997-11-28 2004-09-15 アルプス電気株式会社 Plasma processing equipment
US6155202A (en) * 1997-11-28 2000-12-05 Alps Electric Co., Ltd. Plasma processing apparatus, matching box, and feeder
JP4322350B2 (en) * 1999-05-06 2009-08-26 東京エレクトロン株式会社 Plasma processing equipment
TW492041B (en) * 2000-02-14 2002-06-21 Tokyo Electron Ltd Method and device for attenuating harmonics in semiconductor plasma processing systems

Also Published As

Publication number Publication date
JP2004506307A (en) 2004-02-26
WO2002015649A2 (en) 2002-02-21
US20030141825A1 (en) 2003-07-31
US6657395B2 (en) 2003-12-02
WO2002015649A3 (en) 2002-05-02
TW501381B (en) 2002-09-01

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