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AU2001278949A1 - Alkali earth metal oxide on gate insulators - Google Patents

Alkali earth metal oxide on gate insulators

Info

Publication number
AU2001278949A1
AU2001278949A1 AU2001278949A AU7894901A AU2001278949A1 AU 2001278949 A1 AU2001278949 A1 AU 2001278949A1 AU 2001278949 A AU2001278949 A AU 2001278949A AU 7894901 A AU7894901 A AU 7894901A AU 2001278949 A1 AU2001278949 A1 AU 2001278949A1
Authority
AU
Australia
Prior art keywords
metal oxide
earth metal
alkali earth
gate insulators
insulators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001278949A
Other languages
English (en)
Inventor
Ravindranath Droopad
Lyndee Hilt
Jamal Ramdani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001278949A1 publication Critical patent/AU2001278949A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P14/69398—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D64/01358—
    • H10P14/2905—
    • H10P14/3221—
    • H10P14/3238—
    • H10P14/3251—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/6329—
    • H10P14/6332—
    • H10P14/6339—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10P14/69215—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
AU2001278949A 2000-07-21 2001-07-18 Alkali earth metal oxide on gate insulators Abandoned AU2001278949A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62177100A 2000-07-21 2000-07-21
US09621771 2000-07-21
PCT/US2001/022652 WO2002009157A2 (fr) 2000-07-21 2001-07-18 Oxyde metallique alcalino-terreux sur des isolateurs de porte

Publications (1)

Publication Number Publication Date
AU2001278949A1 true AU2001278949A1 (en) 2002-02-05

Family

ID=24491561

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001278949A Abandoned AU2001278949A1 (en) 2000-07-21 2001-07-18 Alkali earth metal oxide on gate insulators

Country Status (3)

Country Link
AU (1) AU2001278949A1 (fr)
TW (1) TW497209B (fr)
WO (1) WO2002009157A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10303875B4 (de) * 2003-01-31 2006-03-16 Technische Universität Clausthal Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur
US8314420B2 (en) 2004-03-12 2012-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device with multiple component oxide channel
WO2011078398A1 (fr) * 2009-12-25 2011-06-30 Ricoh Company, Ltd. Transistor à effet de champ, mémoire semi-conductrice, élément d'affichage, dispositif d'affichage d'image et système
US10475930B2 (en) 2016-08-17 2019-11-12 Samsung Electronics Co., Ltd. Method of forming crystalline oxides on III-V materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US5767543A (en) * 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
EP0926739A1 (fr) * 1997-12-24 1999-06-30 Texas Instruments Incorporated Structure et procédé pour un transistor à effet de champ du type MIS
JP2001144087A (ja) * 1999-11-12 2001-05-25 Natl Research Inst For Metals Ministry Of Education Culture Sports Science & Technology ５族元素による酸化物／半導体界面の安定化方法と安定化半導体

Also Published As

Publication number Publication date
WO2002009157A2 (fr) 2002-01-31
WO2002009157A3 (fr) 2002-06-20
TW497209B (en) 2002-08-01

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