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AU2001273260A1 - Dual-scan thin film processing system - Google Patents

Dual-scan thin film processing system

Info

Publication number
AU2001273260A1
AU2001273260A1 AU2001273260A AU7326001A AU2001273260A1 AU 2001273260 A1 AU2001273260 A1 AU 2001273260A1 AU 2001273260 A AU2001273260 A AU 2001273260A AU 7326001 A AU7326001 A AU 7326001A AU 2001273260 A1 AU2001273260 A1 AU 2001273260A1
Authority
AU
Australia
Prior art keywords
dual
thin film
processing system
film processing
scan thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001273260A
Inventor
Chunghsin Lee
Piero Sferlazzo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OPNETICS Corp
Original Assignee
OPNETICS CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/840,394 external-priority patent/US6669824B2/en
Application filed by OPNETICS CORP filed Critical OPNETICS CORP
Publication of AU2001273260A1 publication Critical patent/AU2001273260A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/46Sputtering by ion beam produced by an external ion source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2001273260A 2000-07-10 2001-07-09 Dual-scan thin film processing system Abandoned AU2001273260A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US21704900P 2000-07-10 2000-07-10
US60217049 2000-07-10
US09840394 2001-04-23
US09/840,394 US6669824B2 (en) 2000-07-10 2001-04-23 Dual-scan thin film processing system
PCT/US2001/021517 WO2002004695A2 (en) 2000-07-10 2001-07-09 Thin film processing system

Publications (1)

Publication Number Publication Date
AU2001273260A1 true AU2001273260A1 (en) 2002-01-21

Family

ID=26911563

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001273260A Abandoned AU2001273260A1 (en) 2000-07-10 2001-07-09 Dual-scan thin film processing system

Country Status (5)

Country Link
EP (1) EP1301651A2 (en)
JP (1) JP2004533538A (en)
CN (1) CN1257307C (en)
AU (1) AU2001273260A1 (en)
WO (1) WO2002004695A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104378904B (en) * 2014-11-20 2017-01-18 大连理工大学 A plasma chamber with a mechanism for generating negative hydrogen ions
US9988711B2 (en) * 2015-05-14 2018-06-05 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for multilayer deposition
CN106987817B (en) * 2017-04-17 2019-03-29 同济大学 A method of line style magnetic controlled sputtering target rifle is improved in spill cylinder base coated film quality
JP2020023739A (en) * 2018-08-08 2020-02-13 株式会社アルバック Ion beam sputtering device and ion beam sputtering method
JP2020026539A (en) * 2018-08-09 2020-02-20 株式会社アルバック Ion beam sputtering device and ion beam sputtering method
CN114703455B (en) * 2022-02-21 2023-11-28 松山湖材料实验室 Method and device for preparing combined film

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2959023B2 (en) * 1990-02-23 1999-10-06 日本電気株式会社 Ion beam sputtering equipment
JP3074712B2 (en) * 1990-08-31 2000-08-07 日本電気株式会社 Method for producing silver single crystal thin film and metal artificial lattice
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
JPH05170448A (en) * 1991-12-26 1993-07-09 Matsushita Electric Ind Co Ltd Method for manufacturing ceramic thin film
JP3452617B2 (en) * 1993-12-10 2003-09-29 真空冶金株式会社 Gas deposition equipment
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
DE19513918C1 (en) * 1995-04-12 1996-11-07 Fraunhofer Ges Forschung Method of coating submicrometer structures for highly integrated circuits
JPH1026698A (en) * 1996-07-12 1998-01-27 Nikon Corp Vacuum thin film forming apparatus and method of manufacturing reflector
JP3861329B2 (en) * 1996-07-17 2006-12-20 株式会社ニコン Vacuum thin film forming apparatus and reflector manufacturing method
US6086727A (en) * 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
JP3081844B2 (en) * 1998-08-26 2000-08-28 日本電信電話株式会社 Optical filter manufacturing method

Also Published As

Publication number Publication date
WO2002004695A2 (en) 2002-01-17
WO2002004695A3 (en) 2002-06-20
JP2004533538A (en) 2004-11-04
CN1447865A (en) 2003-10-08
EP1301651A2 (en) 2003-04-16
CN1257307C (en) 2006-05-24

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