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AU2001273073A1 - Gain voltage control of sampled grating distributed bragg reflector lasers - Google Patents

Gain voltage control of sampled grating distributed bragg reflector lasers

Info

Publication number
AU2001273073A1
AU2001273073A1 AU2001273073A AU7307301A AU2001273073A1 AU 2001273073 A1 AU2001273073 A1 AU 2001273073A1 AU 2001273073 A AU2001273073 A AU 2001273073A AU 7307301 A AU7307301 A AU 7307301A AU 2001273073 A1 AU2001273073 A1 AU 2001273073A1
Authority
AU
Australia
Prior art keywords
voltage control
bragg reflector
distributed bragg
gain voltage
sampled grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001273073A
Inventor
Larry A. Coldren
Paul F. Crowder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agility Communications Inc
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Publication of AU2001273073A1 publication Critical patent/AU2001273073A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
AU2001273073A 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers Abandoned AU2001273073A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US21574200P 2000-06-29 2000-06-29
US21573900P 2000-06-29 2000-06-29
US21517000P 2000-06-29 2000-06-29
US60215742 2000-06-29
US60215170 2000-06-29
US60215739 2000-06-29
PCT/US2001/020726 WO2002003515A2 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers

Publications (1)

Publication Number Publication Date
AU2001273073A1 true AU2001273073A1 (en) 2002-01-14

Family

ID=27396084

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2001273072A Abandoned AU2001273072A1 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers
AU2001273073A Abandoned AU2001273073A1 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU2001273072A Abandoned AU2001273072A1 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers

Country Status (2)

Country Link
AU (2) AU2001273072A1 (en)
WO (2) WO2002003514A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7257143B2 (en) 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7435660B2 (en) 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US20030219917A1 (en) 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7295586B2 (en) 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN101432936B (en) 2004-10-01 2011-02-02 菲尼萨公司 Vertical cavity surface emitting laser having multiple top-side contacts
CN108011294A (en) * 2017-12-30 2018-05-08 武汉理工光科股份有限公司 Pulsed swept light source and production method based on semiconductor tunable laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622672A (en) * 1984-01-20 1986-11-11 At&T Bell Laboratories Self-stabilized semiconductor lasers
EP0774684A3 (en) * 1995-11-16 1998-04-22 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
US6101200A (en) * 1997-12-24 2000-08-08 Nortel Networks Corporation Laser module allowing simultaneous wavelength and power control
SE519081C3 (en) * 1998-01-21 2003-02-19 Altitun Ab Method and apparatus for optimizing the laser operating point and device

Also Published As

Publication number Publication date
WO2002003514A2 (en) 2002-01-10
WO2002003515A2 (en) 2002-01-10
AU2001273072A1 (en) 2002-01-14
WO2002003515A3 (en) 2002-04-18
WO2002003514A3 (en) 2002-04-18

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