AU2001268756A1 - Mgzno based uv detectors - Google Patents
Mgzno based uv detectorsInfo
- Publication number
- AU2001268756A1 AU2001268756A1 AU2001268756A AU6875601A AU2001268756A1 AU 2001268756 A1 AU2001268756 A1 AU 2001268756A1 AU 2001268756 A AU2001268756 A AU 2001268756A AU 6875601 A AU6875601 A AU 6875601A AU 2001268756 A1 AU2001268756 A1 AU 2001268756A1
- Authority
- AU
- Australia
- Prior art keywords
- detectors
- mgzno
- mgzno based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21419600P | 2000-06-26 | 2000-06-26 | |
| US60214196 | 2000-06-26 | ||
| PCT/US2001/041124 WO2002001650A1 (en) | 2000-06-26 | 2001-06-26 | Mgzno based uv detectors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001268756A1 true AU2001268756A1 (en) | 2002-01-08 |
Family
ID=22798161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001268756A Abandoned AU2001268756A1 (en) | 2000-06-26 | 2001-06-26 | Mgzno based uv detectors |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7132668B2 (en) |
| AU (1) | AU2001268756A1 (en) |
| WO (1) | WO2002001650A1 (en) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006027929A (en) * | 2004-07-13 | 2006-02-02 | Toshiba Ceramics Co Ltd | Electro-optical single crystal thin film growth substrate and manufacturing method thereof |
| US7081371B1 (en) * | 2004-09-02 | 2006-07-25 | University Of Puerto Rico | Fabrication of stable, wide-bandgap thin films of Mg, Zn and O |
| US7309644B2 (en) * | 2004-11-29 | 2007-12-18 | University Of Maryland, College Park | System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoelectronic/sensor/actuator device arrays |
| CN1832667A (en) * | 2005-03-11 | 2006-09-13 | 鸿富锦精密工业（深圳）有限公司 | Casing of portable electronic device and manufacturing method thereof |
| DE602006014189D1 (en) | 2005-11-24 | 2010-06-17 | Murata Manufacturing Co | ULTRAVIOLET SENSOR |
| US7973379B2 (en) * | 2005-12-26 | 2011-07-05 | Citizen Holdings Co., Ltd. | Photovoltaic ultraviolet sensor |
| TWI288234B (en) * | 2006-06-13 | 2007-10-11 | Ghitron Technology Co Ltd | Multi-directional-absorbing ultraviolet sensor |
| US8275724B2 (en) * | 2008-10-15 | 2012-09-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of improving system performance and survivability through changing function |
| WO2008045423A1 (en) * | 2006-10-10 | 2008-04-17 | Structured Materials Inc. | Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices |
| CN100565941C (en) * | 2008-08-21 | 2009-12-02 | 中国科学院长春光学精密机械与物理研究所 | The method for preparing solar blind ultraviolet detector |
| US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
| US8835831B2 (en) * | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
| US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
| US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
| US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
| US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
| US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
| US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
| US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
| US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
| US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
| US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
| US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
| US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
| US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
| JP2011151269A (en) * | 2010-01-22 | 2011-08-04 | Rohm Co Ltd | Imaging device |
| CN103050498B (en) * | 2012-12-28 | 2015-08-26 | 中山大学 | A kind of micro-nano linear array structure ultraviolet avalanche photodetector and preparation method thereof |
| US9059417B1 (en) | 2013-06-06 | 2015-06-16 | University Of Central Florida Research Foundation, Inc. | Photodetectors based on wurtzite MgZnO |
| CN103545397B (en) * | 2013-10-29 | 2016-02-24 | 中国科学院化学研究所 | Thin film ultraviolet detector and preparation method thereof and application |
| CN104504838A (en) * | 2014-12-15 | 2015-04-08 | 长春理工大学 | Ultraviolet flame detector adopting zinc oxide-based semiconductor film |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| US10126165B2 (en) * | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| KR102446410B1 (en) * | 2015-09-17 | 2022-09-22 | 삼성전자주식회사 | Optoelectronic device and electronic device including same |
| CN106997909B (en) * | 2016-01-22 | 2019-04-05 | 中国科学院物理研究所 | A kind of highly sensitive blind deep ultraviolet light detector of subsisting |
| CN106997907B (en) * | 2016-01-22 | 2019-04-05 | 中国科学院物理研究所 | A kind of visible blind UV detector of high sensitivity |
| JP6767774B2 (en) * | 2016-05-19 | 2020-10-14 | ラピスセミコンダクタ株式会社 | Semiconductor devices and methods for manufacturing semiconductor devices |
| WO2018222528A1 (en) * | 2017-05-30 | 2018-12-06 | Carrier Corporation | Semiconductor film and phototube light detector |
| CN109616529A (en) * | 2018-12-07 | 2019-04-12 | 中国科学院长春光学精密机械与物理研究所 | A kind of ultraviolet detector and preparation method thereof |
| CN110335907B (en) * | 2019-07-17 | 2022-07-12 | 东莞市光钛科技有限公司 | A Vertical Structured MgZnO/ZnO Solar Blind Detector |
| TWI750549B (en) * | 2019-12-06 | 2021-12-21 | 國家中山科學研究院 | Method for preparing aluminum nitride-zinc oxide ultraviolet light detection electrode |
| CN111261735B (en) * | 2020-03-19 | 2022-07-08 | 中国科学院长春光学精密机械与物理研究所 | ZnMgO film, ultraviolet detector and preparation method thereof |
| CN112071949B (en) * | 2020-08-04 | 2022-10-11 | 深圳大学 | Ultraviolet detector and preparation method thereof |
| CN113314642B (en) * | 2021-05-28 | 2022-06-21 | 吉林建筑大学 | Preparation method of double-insulation-layer solar-blind ultraviolet photosensitive thin film transistor |
| CN115274932B (en) * | 2022-08-10 | 2024-11-01 | 吉林大学 | FTO/alpha-Ga based2O3Ultraviolet detector of MgZnO crystal form matching heterojunction and preparation method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5628259B2 (en) * | 1973-02-13 | 1981-06-30 | ||
| US4241258A (en) | 1978-12-11 | 1980-12-23 | Firetek Corporation | Ultraviolet fire detector |
| US4731881A (en) | 1986-06-30 | 1988-03-15 | The United States Of America As Represented By The Secretary Of The Navy | Narrow spectral bandwidth, UV solar blind detector |
| US5331168A (en) | 1992-02-19 | 1994-07-19 | Beaubien David J | Reference grade solar ultraviolet band pyranometer |
| US5446286A (en) | 1994-08-11 | 1995-08-29 | Bhargava; Rameshwar N. | Ultra-fast detectors using doped nanocrystal insulators |
| US5626670A (en) * | 1994-10-03 | 1997-05-06 | American Research Corporation Of Virginia | Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films |
| US5574286A (en) | 1995-06-30 | 1996-11-12 | Huston; Alan L. | Solar-blind radiation detector |
| US6057561A (en) * | 1997-03-07 | 2000-05-02 | Japan Science And Technology Corporation | Optical semiconductor element |
| US6104074A (en) | 1997-12-11 | 2000-08-15 | Apa Optics, Inc. | Schottky barrier detectors for visible-blind ultraviolet detection |
| US6137123A (en) | 1999-08-17 | 2000-10-24 | Honeywell International Inc. | High gain GaN/AlGaN heterojunction phototransistor |
| US6559736B2 (en) * | 2000-07-13 | 2003-05-06 | Rutgers, The State University Of New Jersey | Integrated tunable surface acoustic wave with quantum well structure technology and systems provided thereby |
| US6423983B1 (en) * | 2000-10-13 | 2002-07-23 | North Carolina State University | Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys |
-
2001
- 2001-06-26 AU AU2001268756A patent/AU2001268756A1/en not_active Abandoned
- 2001-06-26 WO PCT/US2001/041124 patent/WO2002001650A1/en not_active Ceased
- 2001-06-26 US US10/311,997 patent/US7132668B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002001650A1 (en) | 2002-01-03 |
| US7132668B2 (en) | 2006-11-07 |
| US20030160176A1 (en) | 2003-08-28 |
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