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AU2001266847A1 - Ion implantation system and control method - Google Patents

Ion implantation system and control method

Info

Publication number
AU2001266847A1
AU2001266847A1 AU2001266847A AU6684701A AU2001266847A1 AU 2001266847 A1 AU2001266847 A1 AU 2001266847A1 AU 2001266847 A AU2001266847 A AU 2001266847A AU 6684701 A AU6684701 A AU 6684701A AU 2001266847 A1 AU2001266847 A1 AU 2001266847A1
Authority
AU
Australia
Prior art keywords
control method
ion implantation
implantation system
ion
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001266847A
Inventor
Brian C. Cohen
Thomas N Horsky
Wade A. Krull
George P. Sacco Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semequip Inc
Original Assignee
Semequip Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/736,097 external-priority patent/US6452338B1/en
Priority claimed from PCT/US2000/033786 external-priority patent/WO2001043157A1/en
Application filed by Semequip Inc filed Critical Semequip Inc
Publication of AU2001266847A1 publication Critical patent/AU2001266847A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/205—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers with electrons, e.g. electron impact ionisation, electron attachment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
AU2001266847A 2000-11-30 2001-06-12 Ion implantation system and control method Abandoned AU2001266847A1 (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US25008000P 2000-11-30 2000-11-30
US60250080 2000-11-30
US09/736,097 US6452338B1 (en) 1999-12-13 2000-12-13 Electron beam ion source with integral low-temperature vaporizer
WOUS00/33786WO 2000-12-13
PCT/US2000/033786 WO2001043157A1 (en) 1999-12-13 2000-12-13 Ion implantation ion source, system and method
US09736097 2000-12-13
US25732200P 2000-12-19 2000-12-19
US60257322 2000-12-19
US26726001P 2001-02-07 2001-02-07
US60267260 2001-02-07
PCT/US2001/018822 WO2002043803A1 (en) 2000-11-30 2001-06-12 Ion implantation system and control method

Publications (1)

Publication Number Publication Date
AU2001266847A1 true AU2001266847A1 (en) 2002-06-11

Family

ID=27533372

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001266847A Abandoned AU2001266847A1 (en) 2000-11-30 2001-06-12 Ion implantation system and control method

Country Status (5)

Country Link
EP (2) EP2426692A3 (en)
JP (1) JP2004519070A (en)
CN (1) CN100385605C (en)
AU (1) AU2001266847A1 (en)
WO (1) WO2002043803A1 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
CN101908473B (en) * 2002-06-26 2013-03-13 山米奎普公司 Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions and negative ions
US20050061997A1 (en) * 2003-09-24 2005-03-24 Benveniste Victor M. Ion beam slit extraction with mass separation
US7087913B2 (en) 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
JP4646920B2 (en) * 2003-12-12 2011-03-09 セメクイップ， インコーポレイテッド Method and apparatus for extending equipment operational time in ion implantation
KR101133090B1 (en) 2005-03-30 2012-04-04 파나소닉 주식회사 Impurity introduction apparatus and method of impurity introduction
WO2006127327A2 (en) * 2005-05-20 2006-11-30 Purser Kenneth H A resonance method for production of intense low-impurity ion beams of atoms and molecules
US7531819B2 (en) * 2005-12-20 2009-05-12 Axcelis Technologies, Inc. Fluorine based cleaning of an ion source
WO2007146395A2 (en) 2006-06-13 2007-12-21 Semequip, Inc. Ion beam apparatus and method employing magnetic scanning
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US9076914B2 (en) 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9006688B2 (en) 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US8900982B2 (en) 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
CN104380425B (en) * 2012-06-29 2017-05-31 Fei 公司 Multiple types ion gun
WO2014009028A1 (en) * 2012-07-07 2014-01-16 Limo Patentverwaltung Gmbh & Co. Kg Device for producing an electron beam
US8497486B1 (en) * 2012-10-15 2013-07-30 Varian Semiconductor Equipment Associates, Inc. Ion source having a shutter assembly
GB2518122B (en) * 2013-02-19 2018-08-08 Markes International Ltd An electron ionisation apparatus
US8994272B2 (en) * 2013-03-15 2015-03-31 Nissin Ion Equipment Co., Ltd. Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof
US9275819B2 (en) * 2013-03-15 2016-03-01 Nissin Ion Equipment Co., Ltd. Magnetic field sources for an ion source
CN103794453A (en) * 2013-07-18 2014-05-14 北京中科信电子装备有限公司 Dual-filament plasma shower device
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
CN105206492A (en) * 2014-06-18 2015-12-30 上海华力微电子有限公司 Device for improving ribbon ion beam uniformity
CN104078297A (en) * 2014-07-05 2014-10-01 宁波大学 Atmospheric pressure on-site ion source device and working method thereof
US20170076917A1 (en) * 2015-09-11 2017-03-16 Applied Materials, Inc. Plasma Module With Slotted Ground Plate
US9899181B1 (en) 2017-01-12 2018-02-20 Fei Company Collision ionization ion source
US9941094B1 (en) 2017-02-01 2018-04-10 Fei Company Innovative source assembly for ion beam production
CN108732610B (en) * 2017-04-25 2020-12-25 北京中科信电子装备有限公司 Novel Faraday device for measuring ion beam
US12315713B2 (en) * 2019-10-01 2025-05-27 Dh Technologies Development Pte. Ltd. Electron induced dissociation devices and methods
CN111326380B (en) * 2020-03-30 2022-09-02 赣南师范大学 Direct current ultrafast electron gun of composite focusing grid-carrying photocathode
CN114496852B (en) * 2022-01-25 2022-11-29 永耀实业(深圳)有限公司 Ion implantation machine for integrated circuit production line

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3248587A (en) * 1963-04-18 1966-04-26 Hitachi Ltd Electron bombardment ion source
US3557365A (en) * 1967-12-22 1971-01-19 Perkin Elmer Corp Ion source for a mass spectrometer
US3915757A (en) * 1972-08-09 1975-10-28 Niels N Engel Ion plating method and product therefrom
US3908183A (en) * 1973-03-14 1975-09-23 California Linear Circuits Inc Combined ion implantation and kinetic transport deposition process
US4315153A (en) * 1980-05-19 1982-02-09 Hughes Aircraft Company Focusing ExB mass separator for space-charge dominated ion beams
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
US4841197A (en) * 1986-05-28 1989-06-20 Nihon Shinku Gijutsu Kabushiki Kaisha Double-chamber ion source
JPH0191431A (en) * 1987-04-16 1989-04-11 Sumitomo Eaton Noba Kk Detector for electrostatic charge amount on wafer in ion implanting device
GB8803837D0 (en) * 1988-02-18 1988-03-16 Vg Instr Group Mass spectrometer
US4933551A (en) * 1989-06-05 1990-06-12 The United State Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Reversal electron attachment ionizer for detection of trace species
WO1990015658A1 (en) * 1989-06-06 1990-12-27 Viking Instruments Corp. Miniaturized mass spectrometer system
US5313061A (en) * 1989-06-06 1994-05-17 Viking Instrument Miniaturized mass spectrometer system
US5101110A (en) * 1989-11-14 1992-03-31 Tokyo Electron Limited Ion generator
JPH05106037A (en) * 1991-10-16 1993-04-27 Mitsubishi Electric Corp Ion implantation apparatus and control method thereof
US5340983A (en) * 1992-05-18 1994-08-23 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Method and apparatus for mass analysis using slow monochromatic electrons
JP3366402B2 (en) * 1993-11-19 2003-01-14 理化学研究所 Electron beam excited negative ion source and negative ion generating method
GB2343546B (en) * 1995-11-08 2000-06-21 Applied Materials Inc An ion implanter with deceleration lens assembly
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems

Also Published As

Publication number Publication date
WO2002043803A1 (en) 2002-06-06
EP2426692A3 (en) 2013-08-21
EP1347804A1 (en) 2003-10-01
EP2426692A2 (en) 2012-03-07
CN100385605C (en) 2008-04-30
EP1347804A4 (en) 2009-04-22
JP2004519070A (en) 2004-06-24
CN1477984A (en) 2004-02-25

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