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AU2001262953A1 - Three-dimensional memory array and method of fabrication - Google Patents

Three-dimensional memory array and method of fabrication

Info

Publication number
AU2001262953A1
AU2001262953A1 AU2001262953A AU6295301A AU2001262953A1 AU 2001262953 A1 AU2001262953 A1 AU 2001262953A1 AU 2001262953 A AU2001262953 A AU 2001262953A AU 6295301 A AU6295301 A AU 6295301A AU 2001262953 A1 AU2001262953 A1 AU 2001262953A1
Authority
AU
Australia
Prior art keywords
fabrication
memory array
dimensional memory
dimensional
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001262953A
Inventor
Mark Johnson
N. Johan Knall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk 3D LLC
Original Assignee
Matrix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/814,727 external-priority patent/US6420215B1/en
Application filed by Matrix Semiconductor Inc filed Critical Matrix Semiconductor Inc
Publication of AU2001262953A1 publication Critical patent/AU2001262953A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
AU2001262953A 2000-04-28 2001-04-25 Three-dimensional memory array and method of fabrication Abandoned AU2001262953A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US56062600A 2000-04-28 2000-04-28
US09560626 2000-04-28
US09/814,727 US6420215B1 (en) 2000-04-28 2001-03-21 Three-dimensional memory array and method of fabrication
US09814727 2001-03-21
PCT/US2001/013575 WO2001084553A2 (en) 2000-04-28 2001-04-25 Three-dimensional memory array and method of fabrication

Publications (1)

Publication Number Publication Date
AU2001262953A1 true AU2001262953A1 (en) 2001-11-12

Family

ID=24238610

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001262953A Abandoned AU2001262953A1 (en) 2000-04-28 2001-04-25 Three-dimensional memory array and method of fabrication

Country Status (5)

Country Link
US (3) US6653712B2 (en)
EP (1) EP1284017A4 (en)
AU (1) AU2001262953A1 (en)
TW (1) TW507368B (en)
WO (1) WO2001084553A2 (en)

Families Citing this family (189)

* Cited by examiner, † Cited by third party
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