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AU2001261205A1 - Copolymers for photoresists and processes therefor - Google Patents

Copolymers for photoresists and processes therefor

Info

Publication number
AU2001261205A1
AU2001261205A1 AU2001261205A AU6120501A AU2001261205A1 AU 2001261205 A1 AU2001261205 A1 AU 2001261205A1 AU 2001261205 A AU2001261205 A AU 2001261205A AU 6120501 A AU6120501 A AU 6120501A AU 2001261205 A1 AU2001261205 A1 AU 2001261205A1
Authority
AU
Australia
Prior art keywords
photoresists
copolymers
processes therefor
therefor
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001261205A
Inventor
Roger Harquail French
Frank Leonard Schadt Iii
Robert Clayton Wheland
Frederick C. Zumsteg Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of AU2001261205A1 publication Critical patent/AU2001261205A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
AU2001261205A 2000-05-05 2001-05-04 Copolymers for photoresists and processes therefor Abandoned AU2001261205A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20214300P 2000-05-05 2000-05-05
US60202143 2000-05-05
PCT/US2001/014532 WO2001085811A2 (en) 2000-05-05 2001-05-04 Copolymers for photoresists and processes therefor

Publications (1)

Publication Number Publication Date
AU2001261205A1 true AU2001261205A1 (en) 2001-11-20

Family

ID=22748660

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001261205A Abandoned AU2001261205A1 (en) 2000-05-05 2001-05-04 Copolymers for photoresists and processes therefor

Country Status (6)

Country Link
US (1) US6872503B2 (en)
EP (1) EP1278786B1 (en)
JP (1) JP2003532765A (en)
AU (1) AU2001261205A1 (en)
DE (1) DE60116484T2 (en)
WO (1) WO2001085811A2 (en)

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JP4327360B2 (en) * 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Photoresist, polymer and microlithography methods
US6787286B2 (en) 2001-03-08 2004-09-07 Shipley Company, L.L.C. Solvents and photoresist compositions for short wavelength imaging
US7129009B2 (en) 2002-05-14 2006-10-31 E. I. Du Pont De Nemours And Company Polymer-liquid compositions useful in ultraviolet and vacuum ultraviolet uses
JP4303202B2 (en) * 2002-07-26 2009-07-29 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Fluorinated polymers, photoresists and methods for microlithographic printing
JP2005535780A (en) * 2002-08-09 2005-11-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Photoresist, fluoropolymer and method for 157 nm microlithographic printing
TW200403257A (en) * 2002-08-19 2004-03-01 Du Pont Fluorinated polymers useful as photoresists, and processes for microlithography
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same
KR100947702B1 (en) * 2003-02-26 2010-03-16 삼성전자주식회사 Pattern thin film formation method using carbon nanotubes surface-modified with curable functional groups, and method for manufacturing polymer composite
US7300743B2 (en) 2003-03-06 2007-11-27 E. I. Du Pont De Nemours And Company Radiation durable organic compounds with high transparency in the vacuum ultraviolet, and method for preparing
US7138550B2 (en) 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
US7301344B2 (en) 2003-11-24 2007-11-27 E.I. Du Pont De Nemours & Co. Q-damping circuit including a high temperature superconductor coil for damping a high temperature superconductor self-resonant coil in a nuclear quadrupole resonance detection system
US7375525B2 (en) 2003-12-15 2008-05-20 E.I. Du Pont De Nemours And Company Use of multiple sensors in a nuclear quadropole resonance detection system to improve measurement speed
US7402377B2 (en) 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
TW200613246A (en) 2004-03-08 2006-05-01 Du Pont Highly purified liquid perfluoro-n-alkanes and method for preparing
KR20080033780A (en) * 2006-10-13 2008-04-17 삼성전자주식회사 Multicomponent Carbon Nanotube-Polymer Composites, Compositions for Forming the Same, and Methods for Preparing the Same
JP4554665B2 (en) 2006-12-25 2010-09-29 富士フイルム株式会社 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
WO2008105390A1 (en) * 2007-02-27 2008-09-04 Konica Minolta Medical & Graphic, Inc. Coating solution for image-forming layer for planographic printing plate material, method for production of planographic printing plate material, and planographic printing plate material
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
EP2138898B1 (en) * 2007-04-13 2014-05-21 FUJIFILM Corporation Method for pattern formation, and use of resist composition in said method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
EP2157477B1 (en) * 2007-06-12 2014-08-06 FUJIFILM Corporation Use of a resist composition for negative working-type development, and method for pattern formation using the resist composition
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
WO2008153109A1 (en) * 2007-06-12 2008-12-18 Fujifilm Corporation Resist composition for negative development and method of forming pattern therewith
JP5649567B2 (en) * 2008-05-23 2015-01-07 クオルネルル ユニバーシティー Orthogonal method of organic materials used in electronic and electrical devices
JP5289863B2 (en) * 2008-08-28 2013-09-11 東京エレクトロン株式会社 Amorphous carbon nitride film forming method, multilayer resist film, semiconductor device manufacturing method, and storage medium storing control program
JP5639755B2 (en) * 2008-11-27 2014-12-10 富士フイルム株式会社 Pattern forming method using developer containing organic solvent and rinsing solution used therefor
JP5624906B2 (en) * 2010-03-23 2014-11-12 富士フイルム株式会社 Pattern formation method, chemically amplified resist composition, and resist film
WO2012084745A1 (en) * 2010-12-21 2012-06-28 Solvay Specialty Polymers Italy S.P.A. Process for producing fluorinated organic compounds
US9751967B2 (en) 2010-12-22 2017-09-05 Solvay Specialty Polymers Italy S.P.A. Vinylidene fluoride and trifluoroethylene polymers
KR101848113B1 (en) 2010-12-22 2018-04-11 솔베이 스페셜티 폴리머스 이태리 에스.피.에이. Vinylidene fluoride copolymers
WO2013074622A1 (en) 2011-11-14 2013-05-23 Orthogonal, Inc. Method for patterning an organic material using a non-fluorinated photoresist
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9541829B2 (en) * 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
US9298088B2 (en) * 2013-07-24 2016-03-29 Orthogonal, Inc. Fluorinated photopolymer with fluorinated sensitizer
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9958778B2 (en) 2014-02-07 2018-05-01 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
CN112378872A (en) * 2019-11-08 2021-02-19 陕西彩虹新材料有限公司 Method for testing UV ratio of positive photoresist
US20230087992A1 (en) * 2021-07-30 2023-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material for photoresist and lithography
WO2023202390A1 (en) * 2022-04-18 2023-10-26 台州观宇科技有限公司 Photoresist composition and method for patterning device

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US2409274A (en) * 1943-04-23 1946-10-15 Du Pont Polyfluoro organic ethers and their preparation
JPS60147415A (en) 1984-01-10 1985-08-03 Daikin Ind Ltd Fluorine-containing copolymer and curing composition
US5880234A (en) * 1996-04-01 1999-03-09 Central Glass Company, Limited Curable fluorine-containing copolymer and coating liquid composition containing same
JP4327360B2 (en) * 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Photoresist, polymer and microlithography methods
CN1251022C (en) 1998-10-27 2006-04-12 纳幕尔杜邦公司 Photoresists and associated processes for microlitho graphy

Also Published As

Publication number Publication date
JP2003532765A (en) 2003-11-05
DE60116484T2 (en) 2006-08-24
US6872503B2 (en) 2005-03-29
EP1278786B1 (en) 2006-01-04
DE60116484D1 (en) 2006-03-30
US20030215735A1 (en) 2003-11-20
EP1278786A2 (en) 2003-01-29
WO2001085811A3 (en) 2002-06-27
WO2001085811A2 (en) 2001-11-15

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