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AU2001261026A1 - Deposited thin films and their use in separation and sarcrificial layer applications - Google Patents

Deposited thin films and their use in separation and sarcrificial layer applications

Info

Publication number
AU2001261026A1
AU2001261026A1 AU2001261026A AU6102601A AU2001261026A1 AU 2001261026 A1 AU2001261026 A1 AU 2001261026A1 AU 2001261026 A AU2001261026 A AU 2001261026A AU 6102601 A AU6102601 A AU 6102601A AU 2001261026 A1 AU2001261026 A1 AU 2001261026A1
Authority
AU
Australia
Prior art keywords
sarcrificial
separation
thin films
deposited thin
layer applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001261026A
Inventor
Sanghoon Bae
Kyuhwan Chang
Stephen J. Fonash
Dan Hayes
Ali Kaan Kalkan
Youngchul Lee
Wook Jun Nam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Penn State Research Foundation
Original Assignee
Penn State Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/580,105 external-priority patent/US6399177B1/en
Priority claimed from US09/739,940 external-priority patent/US6794196B2/en
Application filed by Penn State Research Foundation filed Critical Penn State Research Foundation
Publication of AU2001261026A1 publication Critical patent/AU2001261026A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/008—Manufacture of substrate-free structures separating the processed structure from a mother substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0127—Using a carrier for applying a plurality of packaging lids to the system wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Micromachines (AREA)
  • Laminated Bodies (AREA)
  • Weting (AREA)
AU2001261026A 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications Abandoned AU2001261026A1 (en)

Applications Claiming Priority (19)

Application Number Priority Date Filing Date Title
US19754800P 2000-04-17 2000-04-17
US60197548 2000-04-17
US20193700P 2000-05-05 2000-05-05
US60201937 2000-05-05
US09580105 2000-05-30
US09/580,105 US6399177B1 (en) 1999-06-03 2000-05-30 Deposited thin film void-column network materials
US20819700P 2000-05-31 2000-05-31
US60208197 2000-05-31
US21553800P 2000-06-30 2000-06-30
US60215538 2000-06-30
US23162600P 2000-09-11 2000-09-11
US60231626 2000-09-11
US23579400P 2000-09-27 2000-09-27
US60235794 2000-09-27
US09739940 2000-12-19
US09/739,940 US6794196B2 (en) 1999-12-20 2000-12-19 Deposited thin films and their use in detection, attachment and bio-medical applications
US26820801P 2001-02-12 2001-02-12
US60268208 2001-02-12
PCT/US2001/012281 WO2001080286A2 (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications

Publications (1)

Publication Number Publication Date
AU2001261026A1 true AU2001261026A1 (en) 2001-10-30

Family

ID=27578668

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001261026A Abandoned AU2001261026A1 (en) 2000-04-17 2001-04-17 Deposited thin films and their use in separation and sarcrificial layer applications

Country Status (6)

Country Link
EP (1) EP1280617A4 (en)
JP (1) JP2004507880A (en)
CN (1) CN1427749A (en)
AU (1) AU2001261026A1 (en)
CA (1) CA2406214A1 (en)
WO (1) WO2001080286A2 (en)

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FR2844396B1 (en) * 2002-09-06 2006-02-03 St Microelectronics Sa METHOD FOR PRODUCING AN INTEGRATED ELECTRONIC COMPONENT AND ELECTRICAL DEVICE INCORPORATING AN INTEGRATED COMPONENT THUS OBTAINED
US7029781B2 (en) 2003-01-21 2006-04-18 Stmicroelectronics, Inc. Microfuel cell having anodic and cathodic microfluidic channels and related methods
CN100446212C (en) 2003-04-02 2008-12-24 皇家飞利浦电子股份有限公司 A kind of manufacturing method of flexible electronic device and flexible device
SE526192C2 (en) 2003-04-17 2005-07-26 Micromuscle Ab Method of manufacturing a device
FR2857163B1 (en) * 2003-07-01 2008-12-26 Commissariat Energie Atomique FUEL CELL IN WHICH A FLUID CIRCULARLY CIRCUMSTANCES PARALLEL TO THE ELECTROLYTIC MEMBRANE AND METHOD OF MANUFACTURING SUCH A FUEL CELL
US20050095814A1 (en) * 2003-11-05 2005-05-05 Xu Zhu Ultrathin form factor MEMS microphones and microspeakers
US7184202B2 (en) * 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
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MY149190A (en) 2006-09-20 2013-07-31 Univ Illinois Release strategies for making transferable semiconductor structures, devices and device components
US7851876B2 (en) 2006-10-20 2010-12-14 Hewlett-Packard Development Company, L.P. Micro electro mechanical system
JP5377066B2 (en) * 2009-05-08 2013-12-25 キヤノン株式会社 Capacitive electromechanical transducer and method for producing the same
TWI444945B (en) * 2011-08-23 2014-07-11 E Ink Holdings Inc Substrate, structure and method for fabricating flexible display device
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KR101241708B1 (en) * 2011-01-27 2013-03-11 엘지이노텍 주식회사 Solar cell apparatus and method of fabricating the same
CN102320558B (en) * 2011-09-13 2014-03-26 上海先进半导体制造股份有限公司 Manufacturing method for cavity of full silica-based microfluidic device
KR20150001822A (en) 2012-04-23 2015-01-06 난양 테크놀러지컬 유니버시티 Apparatus And Method For Separating A Stacked Arrangement
US11272621B2 (en) 2012-12-28 2022-03-08 Shenzhen Royole Technologies Co., Ltd. Substrate and method for fabricating flexible electronic device and rigid substrate
US20150382474A1 (en) * 2012-12-28 2015-12-31 Shenzhen Royole Technology Co., Ltd. Method for fabricating flexible electronic device and substrate for fabricating the same
US9768271B2 (en) * 2013-02-22 2017-09-19 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
CN103449358A (en) * 2013-08-27 2013-12-18 上海先进半导体制造股份有限公司 Manufacturing method of closed cavity of micro-electromechanical system (MEMS)
US9851327B2 (en) * 2014-06-02 2017-12-26 Maxim Integrated Products, Inc. Photopatternable glass micro electrochemical cell and method
KR102301501B1 (en) * 2015-01-21 2021-09-13 삼성디스플레이 주식회사 Manufacturing method of flexible display device
TW201705515A (en) * 2015-03-18 2017-02-01 美國密西根州立大學 Strain release epitaxial lift-off by pre-patterned convex surface
EP3136443A1 (en) 2015-08-28 2017-03-01 Nokia Technologies Oy A method for forming apparatus comprising two dimensional material
CN106226361A (en) * 2016-08-31 2016-12-14 中国电子科技集团公司第四十九研究所 A Novel Micro-hotplate Gas Sensitive Element
CN106784151B (en) * 2016-12-28 2018-08-14 中国电子科技集团公司第十八研究所 A kind of preparation method of flexible copper indium gallium selenide thin film solar cell
CN110068549B (en) * 2018-01-22 2021-09-17 天津大学 Flexible photonic device film stacking structure with negligible force optical coupling effect
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Also Published As

Publication number Publication date
WO2001080286A2 (en) 2001-10-25
EP1280617A2 (en) 2003-02-05
JP2004507880A (en) 2004-03-11
EP1280617A4 (en) 2005-08-03
WO2001080286A3 (en) 2002-02-07
CN1427749A (en) 2003-07-02
CA2406214A1 (en) 2001-10-25

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