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AU2001258089A1 - Matchline sense circuit and method - Google Patents

Matchline sense circuit and method

Info

Publication number
AU2001258089A1
AU2001258089A1 AU2001258089A AU5808901A AU2001258089A1 AU 2001258089 A1 AU2001258089 A1 AU 2001258089A1 AU 2001258089 A AU2001258089 A AU 2001258089A AU 5808901 A AU5808901 A AU 5808901A AU 2001258089 A1 AU2001258089 A1 AU 2001258089A1
Authority
AU
Australia
Prior art keywords
sense circuit
matchline sense
matchline
circuit
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001258089A
Inventor
Abdullah Ahmed
Peter Gillingham
Valerie Lines
Peter P. Ma
Stanley Jeh-Chun Ma
Robert Mckenzie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of AU2001258089A1 publication Critical patent/AU2001258089A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
AU2001258089A 2000-05-01 2001-05-01 Matchline sense circuit and method Abandoned AU2001258089A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA2307240 2000-05-01
CA2307240A CA2307240C (en) 2000-05-01 2000-05-01 Matchline sense circuit and method
PCT/CA2001/000628 WO2001084555A1 (en) 2000-05-01 2001-05-01 Matchline sense circuit and method

Publications (1)

Publication Number Publication Date
AU2001258089A1 true AU2001258089A1 (en) 2001-11-12

Family

ID=4166037

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001258089A Abandoned AU2001258089A1 (en) 2000-05-01 2001-05-01 Matchline sense circuit and method

Country Status (8)

Country Link
US (3) US6987682B2 (en)
KR (1) KR100718902B1 (en)
CN (1) CN1251242C (en)
AU (1) AU2001258089A1 (en)
CA (1) CA2307240C (en)
DE (1) DE10196141T1 (en)
GB (1) GB2379541B (en)
WO (1) WO2001084555A1 (en)

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US6704216B1 (en) * 2002-08-15 2004-03-09 Integrated Silicon Solution, Inc. Dual match-line, twin-cell, binary-ternary CAM
US7006368B2 (en) 2002-11-07 2006-02-28 Mosaid Technologies Incorporated Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories
KR100543930B1 (en) * 2003-10-31 2006-01-20 주식회사 하이닉스반도체 Memory device that can adjust the light recovery time according to the cascade
KR101149816B1 (en) * 2004-05-28 2012-05-25 삼성전자주식회사 Cache hit logic of cache memory
US7304873B1 (en) 2005-01-25 2007-12-04 Netlogic Microsystems, Inc. Method for on-the-fly error correction in a content addressable memory (CAM) and device therefor
US7372713B2 (en) * 2006-04-17 2008-05-13 Texas Instruments Incorporated Match sensing circuit for a content addressable memory device
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
US7471537B1 (en) * 2006-06-23 2008-12-30 Integrated Device Technology, Ltd. Content addressable memories (CAM) having low power dynamic match line sensing circuits therein
US7391633B2 (en) * 2006-07-26 2008-06-24 Agere Systems Inc. Accelerated searching for content-addressable memory
US7474546B2 (en) 2007-04-02 2009-01-06 Sun Microsystems, Inc. Hybrid dual match line architecture for content addressable memories and other data structures
US7548365B2 (en) * 2007-06-06 2009-06-16 Texas Instruments Incorporated Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
US20090129185A1 (en) * 2007-11-19 2009-05-21 Cassels John J Semiconductor circuits capable of self detecting defects
US7903461B2 (en) * 2008-09-22 2011-03-08 Micron Technology, Inc. Sensing for memory read and program verify operations in a non-volatile memory device
US8493764B2 (en) * 2011-02-10 2013-07-23 Lsi Corporation High density CAM array architectures with adaptive current controlled match-line discharge
US8990631B1 (en) 2011-03-03 2015-03-24 Netlogic Microsystems, Inc. Packet format for error reporting in a content addressable memory
JP6012263B2 (en) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor memory device
CN103597545B (en) * 2011-06-09 2016-10-19 株式会社半导体能源研究所 Cache memory and driving method thereof
CN102522106B (en) * 2011-12-13 2014-04-23 北京大学 High Speed Low Power WTA Sense Amplifier
CN102998607A (en) * 2012-11-29 2013-03-27 上海集成电路研发中心有限公司 Method and system for measuring and representing mismatching characteristics of metal oxide semiconductor (MOS) transistor devices
WO2016080500A1 (en) * 2014-11-21 2016-05-26 シャープ株式会社 Active matrix substrate, and display device provided with same
US9704575B1 (en) * 2016-01-07 2017-07-11 Globalfoundries Inc. Content-addressable memory having multiple reference matchlines to reduce latency
US9583192B1 (en) * 2016-05-25 2017-02-28 Globalfoundries Inc. Matchline precharge architecture for self-reference matchline sensing
US9859006B1 (en) * 2016-06-17 2018-01-02 Globalfoundries Inc. Algorithmic N search/M write ternary content addressable memory (TCAM)
US10937475B1 (en) * 2019-10-24 2021-03-02 Renesas Elelctronics Corporation Content addressable memory
US11651819B2 (en) * 2020-07-24 2023-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and method of operating the same
CN111933198B (en) * 2020-09-14 2021-02-05 新华三半导体技术有限公司 Matchline detection circuit for Content Addressable Memory (CAM)
CN113113075B (en) * 2021-06-11 2021-08-27 新华三半导体技术有限公司 Chip testing method and device, control circuit and chip
JP7707100B2 (en) * 2022-02-04 2025-07-14 ルネサスエレクトロニクス株式会社 Semiconductor device and semiconductor system
CN114567837B (en) * 2022-02-28 2024-04-26 歌尔微电子股份有限公司 Sensor microphone output protection circuit and sensor microphone
TWI809944B (en) * 2022-06-22 2023-07-21 旺宏電子股份有限公司 Hybrid type content addressable memory for implementing in-memory-search and operation method
US12142319B2 (en) 2022-06-22 2024-11-12 Macronix International Co., Ltd. Hybrid type content addressable memory for implementing in-memory-search and operation method thereof
TWI827137B (en) * 2022-07-13 2023-12-21 旺宏電子股份有限公司 Memory device and data search method for in-memory search
TWI881718B (en) * 2024-02-21 2025-04-21 旺宏電子股份有限公司 Memory searching engine, reference array and reference calibrating method

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US5051948A (en) * 1988-02-23 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Content addressable memory device
US5270591A (en) * 1992-02-28 1993-12-14 Xerox Corporation Content addressable memory architecture and circuits
US5446685A (en) * 1993-02-23 1995-08-29 Intergraph Corporation Pulsed ground circuit for CAM and PAL memories
JP3117375B2 (en) * 1994-11-28 2000-12-11 インターナショナル・ビジネス・マシーンズ・コーポレ−ション Control circuit for associative memory and associative memory device
US5754463A (en) 1996-07-15 1998-05-19 Intel Corporation Multi-ported content addressable memory with precharge "non match"
US6125049A (en) * 1999-01-05 2000-09-26 Netlogic Microsystems, Inc. Match line control circuit for content addressable memory
US6044005A (en) * 1999-02-03 2000-03-28 Sibercore Technologies Incorporated Content addressable memory storage device
JP3478749B2 (en) * 1999-02-05 2003-12-15 インターナショナル・ビジネス・マシーンズ・コーポレーション Pre-charge circuit and method for word match line of content addressable memory (CAM)
CA2266062C (en) * 1999-03-31 2004-03-30 Peter Gillingham Dynamic content addressable memory cell
US6317349B1 (en) * 1999-04-16 2001-11-13 Sandisk Corporation Non-volatile content addressable memory
CA2273665A1 (en) * 1999-06-07 2000-12-07 Mosaid Technologies Incorporated Differential sensing amplifier for content addressable memory
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JP4732596B2 (en) * 2000-03-03 2011-07-27 川崎マイクロエレクトロニクス株式会社 Associative memory device
CA2310295C (en) * 2000-05-31 2010-10-05 Mosaid Technologies Incorporated Multiple match detection circuit and method
US6373738B1 (en) * 2000-11-20 2002-04-16 International Business Machines Corporation Low power CAM match line circuit
US6430073B1 (en) * 2000-12-06 2002-08-06 International Business Machines Corporation Dram CAM cell with hidden refresh
US6442054B1 (en) * 2001-05-24 2002-08-27 Integrated Device Technology, Inc. Sense amplifier for content addressable memory
US6708250B2 (en) * 2001-09-28 2004-03-16 Mosaid Technologies Incorporated Circuit and method for performing variable width searches in a content addressable memory
CA2365891C (en) * 2001-10-31 2012-03-13 Mosaid Technologies Incorporated Priority encoder circuit and method for content addressable memory
CA2384039C (en) * 2001-12-28 2012-08-14 Mosaid Technologies Incorporated Low power content addressable memory architecture
US6768659B2 (en) * 2001-12-31 2004-07-27 Mosaid Technologies Incorporated Circuit and method for reducing power usage in a content addressable memory
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US7006368B2 (en) * 2002-11-07 2006-02-28 Mosaid Technologies Incorporated Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories
US7136961B2 (en) * 2002-11-13 2006-11-14 Mosaid Technologies, Inc. Method and apparatus for wide word deletion in content addressable memories
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Also Published As

Publication number Publication date
CA2307240C (en) 2011-04-12
CA2307240A1 (en) 2001-11-01
US20070258277A1 (en) 2007-11-08
CN1251242C (en) 2006-04-12
CN1439160A (en) 2003-08-27
US6987682B2 (en) 2006-01-17
US7382638B2 (en) 2008-06-03
US7251148B2 (en) 2007-07-31
KR100718902B1 (en) 2007-05-17
GB2379541A (en) 2003-03-12
KR20030014210A (en) 2003-02-15
DE10196141T1 (en) 2003-04-30
US20060083041A1 (en) 2006-04-20
GB0225063D0 (en) 2002-12-04
WO2001084555A1 (en) 2001-11-08
US20030161194A1 (en) 2003-08-28
GB2379541B (en) 2004-11-17

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