[go: up one dir, main page]

AU2001250835A1 - Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals - Google Patents

Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals

Info

Publication number
AU2001250835A1
AU2001250835A1 AU2001250835A AU5083501A AU2001250835A1 AU 2001250835 A1 AU2001250835 A1 AU 2001250835A1 AU 2001250835 A AU2001250835 A AU 2001250835A AU 5083501 A AU5083501 A AU 5083501A AU 2001250835 A1 AU2001250835 A1 AU 2001250835A1
Authority
AU
Australia
Prior art keywords
seed
intergrowth
large size
tiled
size single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001250835A
Inventor
William J. Everson
David W. Snyder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coherent Corp
Original Assignee
II VI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by II VI Inc filed Critical II VI Inc
Publication of AU2001250835A1 publication Critical patent/AU2001250835A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2001250835A 2000-03-13 2001-03-13 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals Abandoned AU2001250835A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18878400P 2000-03-13 2000-03-13
US60/188,784 2000-03-13
PCT/US2001/008047 WO2001068957A1 (en) 2000-03-13 2001-03-13 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals

Publications (1)

Publication Number Publication Date
AU2001250835A1 true AU2001250835A1 (en) 2001-09-24

Family

ID=22694508

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001250835A Abandoned AU2001250835A1 (en) 2000-03-13 2001-03-13 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals

Country Status (6)

Country Link
US (1) US6805745B2 (en)
EP (1) EP1268883A1 (en)
JP (1) JP2003527298A (en)
AU (1) AU2001250835A1 (en)
TW (1) TW539783B (en)
WO (1) WO2001068957A1 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2852974A1 (en) * 2003-03-31 2004-10-01 Soitec Silicon On Insulator PROCESS FOR THE PRODUCTION OF MONOCRYSTALLINE CRYSTALS
US7608524B2 (en) * 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
KR20130133883A (en) 2006-01-20 2013-12-09 에이엠지 아이디얼캐스트 솔라 코포레이션 Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US7993453B2 (en) 2006-05-18 2011-08-09 Showa Denko K.K. Method for producing silicon carbide single crystal
JP5332168B2 (en) * 2006-11-17 2013-11-06 住友電気工業株式会社 Method for producing group III nitride crystal
EP2505695A3 (en) * 2007-07-20 2013-01-09 AMG Idealcast Solar Corporation Methods for manufacturing cast silicon from seed crystals
JP5380442B2 (en) 2007-07-20 2014-01-08 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション Method and apparatus for producing cast silicon from seed crystals
US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
WO2009015168A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing geometric multi-crystalline cast materials
US8206636B2 (en) 2008-06-20 2012-06-26 Amaranth Medical Pte. Stent fabrication via tubular casting processes
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP2012516572A (en) * 2009-01-30 2012-07-19 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション SEED LAYER AND SEED LAYER MANUFACTURING METHOD
JP2011246315A (en) * 2010-05-28 2011-12-08 Sumitomo Electric Ind Ltd Silicon carbide substrate and method for producing the same
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
WO2012127748A1 (en) * 2011-03-22 2012-09-27 住友電気工業株式会社 Silicon carbide substrate
US9322110B2 (en) 2013-02-21 2016-04-26 Ii-Vi Incorporated Vanadium doped SiC single crystals and method thereof
US9580837B2 (en) 2014-09-03 2017-02-28 Ii-Vi Incorporated Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
EP3353339A4 (en) 2015-09-24 2019-05-08 Melior Innovations Inc. STEAM-VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING SILICON CARBIDE DERIVED FROM HIGH-PURITY POLYMER
CN105525351A (en) * 2015-12-24 2016-04-27 中国科学院上海硅酸盐研究所 Efficient SiC crystal diameter-expanding method
CN105671638B (en) * 2016-03-01 2018-07-06 山东大学 A kind of preparation method of major diameter dimension SiC seed crystals
US20170321345A1 (en) 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
JP6839525B2 (en) 2016-11-15 2021-03-10 昭和電工株式会社 SiC single crystal complex and SiC ingot
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
CN110541199B (en) * 2019-10-11 2020-07-31 山东大学 A kind of preparation method of high-quality SiC seed crystal with a diameter of 8 inches and above
CN112746321A (en) * 2019-10-31 2021-05-04 赛维Ldk太阳能高科技(新余)有限公司 Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
AT524237B1 (en) 2020-09-28 2022-04-15 Ebner Ind Ofenbau Apparatus for silicon carbide monocrystal production
AT524249B1 (en) * 2020-09-28 2023-07-15 Ebner Ind Ofenbau Method of growing single crystals
AT524248B1 (en) 2020-09-28 2023-07-15 Ebner Ind Ofenbau Process for growing crystals
EP4144893A1 (en) 2021-09-06 2023-03-08 Instytut Wysokich Cisnien Polskiej Akademii Nauk A method for reducing or eliminating cracks during crystal growing process and a shaped metal piece for use in this method
CN114032613B (en) * 2021-10-14 2023-10-31 吉林大学 Method for improving quality of splicing seam of diamond monocrystal grown by splicing method
CN114262935A (en) * 2021-12-17 2022-04-01 杭州乾晶半导体有限公司 Growth method of large-size silicon carbide seed crystal and growth method of corresponding single crystal
CN114262936B (en) * 2021-12-17 2023-08-01 杭州乾晶半导体有限公司 Silicon carbide single crystal growth method and crack closure growth method
CN115592829B (en) * 2022-10-27 2025-05-02 浙江大学 A splicing structure for expanding the diameter of silicon carbide seed crystal, a manufacturing method and silicon carbide crystal
CN120250164A (en) * 2025-06-05 2025-07-04 西安晟光硅研半导体科技有限公司 A 12-inch silicon carbide seed crystal based on water-guided laser and its preparation method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147572A (en) 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JP3030111B2 (en) * 1991-03-27 2000-04-10 三洋電機株式会社 Semiconductor crystal growth method
US5433167A (en) 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
US5441011A (en) 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5746827A (en) * 1995-12-27 1998-05-05 Northrop Grumman Corporation Method of producing large diameter silicon carbide crystals
US5667587A (en) * 1996-12-18 1997-09-16 Northrop Gruman Corporation Apparatus for growing silicon carbide crystals
US5873937A (en) 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
US5788768A (en) 1997-05-08 1998-08-04 Northrop Grumman Corporation Feedstock arrangement for silicon carbide boule growth
US6139632A (en) 1997-09-15 2000-10-31 Sumitomo Sitix Corporation Seed crystals, seed crystal holders, and a method for pulling a single crystal
JP4061700B2 (en) * 1998-03-19 2008-03-19 株式会社デンソー Single crystal manufacturing method

Also Published As

Publication number Publication date
WO2001068957A9 (en) 2003-01-16
US6805745B2 (en) 2004-10-19
WO2001068957A1 (en) 2001-09-20
EP1268883A1 (en) 2003-01-02
US20030029376A1 (en) 2003-02-13
TW539783B (en) 2003-07-01
JP2003527298A (en) 2003-09-16

Similar Documents

Publication Publication Date Title
AU2001250835A1 (en) Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
EP1488790A4 (en) Solid preparation containing single crystal form
AU2001256732A1 (en) Process for producing crystal
AU2001263372A1 (en) Controllable crystal oscillator
EP1182281A4 (en) Single crystal growing device and production method of single crystal using the device and single crystal
AU2456500A (en) Liquid crystal compounds
AU2001238634A1 (en) Photochemically controlled photonic crystal diffraction
AU2003230894A1 (en) Metamaterials employing photonic crystals
AU2002330453A1 (en) Crystals of hydroxynorephedrine derivative
GB2377194B (en) Single crystal seed
AU2001244692A1 (en) Novel crystal form of pyrrolidylthiocarbapenem derivative
AU2003220068A1 (en) Molecular crystals of controlled size
EP1199387A4 (en) Method for growing single crystal of semiconductor
GB0211485D0 (en) Method of growing oriented single crystals with reusable crystal seeds or crystal nuclei
AU2001269685A1 (en) Crystallization of 4-diphosphocytidyl-2-c-methylerythritol synthesis
AU2003230844A1 (en) Crystals and structures of pak4kd kinase pak4kd
AU2001273102A1 (en) Crystal structure of survivin
AU2003202872A1 (en) Preparation of nano-sized crystals
AU1537801A (en) Photo-alignment of liquid crystals
AU2190701A (en) A new family of conducting liquid crystals
AU2003260078A1 (en) Crystalline and amorphous forms of (s) -repaglinide and the processes for preparation thereof
GB2364327B (en) Single crystal seed alloy
AU7302500A (en) Photonic crystal materials
AU2003257541A1 (en) Novel crystals
AU5223699A (en) Growth of bulk single crystals of aluminum