AU2001249077A1 - Dense-plasma etching of inp-based materials using chlorine and nitrogen - Google Patents

Dense-plasma etching of inp-based materials using chlorine and nitrogen

Info

Publication number: AU2001249077A1
Authority: AU; Australia
Prior art keywords: inp; dense; chlorine; nitrogen; plasma etching
Prior art date: 2000-02-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2001249077A

Inventor

Seng-Tiong Ho

Seoijin Park

Thomas E. Pierson

Christopher T. Youtsey

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Northwestern University

Nanovation Technologies Inc

Original Assignee

Northwestern University

Nanovation Technologies Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-02-28

Filing date

2001-02-28

Publication date

2001-09-12

2001-02-28 Application filed by Northwestern University, Nanovation Technologies Inc filed Critical Northwestern University

2001-09-12 Publication of AU2001249077A1 publication Critical patent/AU2001249077A1/en

Status Abandoned legal-status Critical Current

Classifications

- H10P50/246—

AU2001249077A 2000-02-28 2001-02-28 Dense-plasma etching of inp-based materials using chlorine and nitrogen Abandoned AU2001249077A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US18530800P	2000-02-28	2000-02-28
US60185308		2000-02-28
PCT/US2001/006472 WO2001065593A1 (en)	2000-02-28	2001-02-28	Dense-plasma etching of inp-based materials using chlorine and nitrogen

Publications (1)

Publication Number	Publication Date
AU2001249077A1 true AU2001249077A1 (en)	2001-09-12

Family

ID=22680445

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2001249077A Abandoned AU2001249077A1 (en)	2000-02-28	2001-02-28	Dense-plasma etching of inp-based materials using chlorine and nitrogen

Country Status (5)

Country	Link
US (1)	US20010025826A1 (en)
AU (1)	AU2001249077A1 (en)
CA (1)	CA2400765A1 (en)
TW (1)	TW506006B (en)
WO (1)	WO2001065593A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7103245B2 (en)	2000-07-10	2006-09-05	Massachusetts Institute Of Technology	High density integrated optical chip
US6665033B2 (en) *	2000-11-30	2003-12-16	International Business Machines Corporation	Method for forming alignment layer by ion beam surface modification
US6934427B2 (en)	2002-03-12	2005-08-23	Enablence Holdings Llc	High density integrated optical chip with low index difference waveguide functions
US20040053506A1 (en) *	2002-07-19	2004-03-18	Yao-Sheng Lee	High temperature anisotropic etching of multi-layer structures
US7262137B2 (en) *	2004-02-18	2007-08-28	Northrop Grumman Corporation	Dry etching process for compound semiconductors
KR100759808B1 (en) *	2005-12-08	2007-09-20	한국전자통신연구원	Method for etching multi-layer of group III-V semiconductor materials and method for manufacturing vertical cavity surface emitting laser device
US8303833B2 (en) *	2007-06-21	2012-11-06	Fei Company	High resolution plasma etch
US9934981B2 (en) *	2013-09-26	2018-04-03	Varian Semiconductor Equipment Associates, Inc.	Techniques for processing substrates using directional reactive ion etching
US10003014B2 (en) *	2014-06-20	2018-06-19	International Business Machines Corporation	Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
US9484216B1 (en) *	2015-06-02	2016-11-01	Sandia Corporation	Methods for dry etching semiconductor devices
US10008384B2 (en)	2015-06-25	2018-06-26	Varian Semiconductor Equipment Associates, Inc.	Techniques to engineer nanoscale patterned features using ions
GB201811873D0 (en) *	2018-07-20	2018-09-05	Oxford Instruments Nanotechnology Tools Ltd	Semiconductor etching methods
JP7555025B2 (en) *	2020-09-03	2024-09-24	パナソニックＩｐマネジメント株式会社	Plasma etching method and semiconductor device manufacturing method
GB202209654D0 (en) *	2022-06-30	2022-08-17	Spts Technologies Ltd	Post-processing of indium-containing compound semiconductors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0766175A (en) *	1993-08-31	1995-03-10	Mitsubishi Electric Corp	In-based compound semiconductor etching method
US5527425A (en) *	1995-07-21	1996-06-18	At&T Corp.	Method of making in-containing III/V semiconductor devices

2001
- 2001-02-28 AU AU2001249077A patent/AU2001249077A1/en not_active Abandoned
- 2001-02-28 WO PCT/US2001/006472 patent/WO2001065593A1/en not_active Ceased
- 2001-02-28 CA CA002400765A patent/CA2400765A1/en not_active Abandoned
- 2001-02-28 US US09/795,715 patent/US20010025826A1/en not_active Abandoned
- 2001-05-31 TW TW090104770A patent/TW506006B/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
CA2400765A1 (en)	2001-09-07
WO2001065593A1 (en)	2001-09-07
US20010025826A1 (en)	2001-10-04
TW506006B (en)	2002-10-11

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