Classifications

• • C—CHEMISTRY; METALLURGY
  • C01—INORGANIC CHEMISTRY
  • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
  • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
  • C01B13/10—Preparation of ozone
  • C01B13/11—Preparation of ozone by electric discharge
• • C—CHEMISTRY; METALLURGY
  • C01—INORGANIC CHEMISTRY
  • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
  • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
  • C01B13/10—Preparation of ozone
  • C01B13/11—Preparation of ozone by electric discharge
  • C01B13/115—Preparation of ozone by electric discharge characterised by the electrical circuits producing the electrical discharge
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/04—Modifications for accelerating switching
  • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
  • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
  • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

• Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Inorganic Chemistry (AREA)
• Power Conversion In General (AREA)
• Electronic Switches (AREA)

Applications Claiming Priority (3)

Publications (1)

Family

ID=25588635

Family Applications (1)

Country Status (6)

Families Citing this family (4)

Family Cites Families (8)

• 2001
  • 2001-02-23 ES ES01918992.7T patent/ES2593907T3/en not_active Expired - Lifetime
  • 2001-02-23 EP EP01918992.7A patent/EP1264402B1/en not_active Expired - Lifetime
  • 2001-02-23 EP EP16174333.1A patent/EP3096455A1/en not_active Withdrawn
  • 2001-02-23 WO PCT/ZA2001/000024 patent/WO2001063763A2/en not_active Ceased
  • 2001-02-23 JP JP2001562839A patent/JP2003524982A/en active Pending
  • 2001-02-23 CN CNA01805515XA patent/CN1522495A/en active Pending
  • 2001-02-23 AU AU2001246004A patent/AU2001246004A1/en not_active Abandoned

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