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AU2001242192A1 - Method and apparatus for magnetron sputtering - Google Patents

Method and apparatus for magnetron sputtering

Info

Publication number
AU2001242192A1
AU2001242192A1 AU2001242192A AU4219201A AU2001242192A1 AU 2001242192 A1 AU2001242192 A1 AU 2001242192A1 AU 2001242192 A AU2001242192 A AU 2001242192A AU 4219201 A AU4219201 A AU 4219201A AU 2001242192 A1 AU2001242192 A1 AU 2001242192A1
Authority
AU
Australia
Prior art keywords
magnetron sputtering
magnetron
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001242192A
Inventor
Alexander S. Gorodetsky
Konstantin K. Tzatzov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Surface Engineered Products Corp
Original Assignee
Surface Engineered Products Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surface Engineered Products Corp filed Critical Surface Engineered Products Corp
Publication of AU2001242192A1 publication Critical patent/AU2001242192A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2001242192A 2000-04-07 2001-03-30 Method and apparatus for magnetron sputtering Abandoned AU2001242192A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09545817 2000-04-07
US09/545,817 US6436252B1 (en) 2000-04-07 2000-04-07 Method and apparatus for magnetron sputtering
PCT/CA2001/000413 WO2001077402A2 (en) 2000-04-07 2001-03-30 Method and apparatus for magnetron sputtering

Publications (1)

Publication Number Publication Date
AU2001242192A1 true AU2001242192A1 (en) 2001-10-23

Family

ID=24177669

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001242192A Abandoned AU2001242192A1 (en) 2000-04-07 2001-03-30 Method and apparatus for magnetron sputtering

Country Status (4)

Country Link
US (1) US6436252B1 (en)
EP (1) EP1273028A2 (en)
AU (1) AU2001242192A1 (en)
WO (1) WO2001077402A2 (en)

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US7513982B2 (en) * 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
US8500975B2 (en) * 2004-01-07 2013-08-06 Applied Materials, Inc. Method and apparatus for sputtering onto large flat panels
US7444955B2 (en) * 2004-05-19 2008-11-04 Sub-One Technology, Inc. Apparatus for directing plasma flow to coat internal passageways
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US20060207871A1 (en) * 2005-03-16 2006-09-21 Gennady Yumshtyk Sputtering devices and methods
US8470141B1 (en) * 2005-04-29 2013-06-25 Angstrom Sciences, Inc. High power cathode
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JP4110175B2 (en) * 2006-03-22 2008-07-02 株式会社神戸製鋼所 Arc ion plating method
ATE499697T1 (en) * 2006-11-14 2011-03-15 Applied Materials Inc MAGNETRON SPUTTER SOURCE, SPUTTER COATING SYSTEM AND METHOD FOR COATING A SUBSTRATE
US7879203B2 (en) * 2006-12-11 2011-02-01 General Electric Company Method and apparatus for cathodic arc ion plasma deposition
US8940140B2 (en) * 2007-09-05 2015-01-27 Uchicago Argonne, Llc Thin film application device and method for coating small aperture vacuum vessels
JP2009287076A (en) * 2008-05-28 2009-12-10 Showa Denko Kk Sputtering method and apparatus
GB2461094B (en) * 2008-06-20 2012-08-22 Mantis Deposition Ltd Deposition of materials
GB2473656A (en) * 2009-09-21 2011-03-23 Mantis Deposition Ltd Sputter deposition using a cylindrical target
US20110155568A1 (en) * 2009-12-29 2011-06-30 Sputtering Components, Inc. Indexing magnet assembly for rotary sputtering cathode
US20120193227A1 (en) * 2011-02-02 2012-08-02 Tryon Brian S Magnet array for a physical vapor deposition system
DE102011004450B4 (en) * 2011-02-21 2012-09-13 Von Ardenne Anlagentechnik Gmbh magnetron
AT12695U1 (en) * 2011-04-08 2012-10-15 Plansee Se PIPE TARGET WITH PROTECTION DEVICE
US20120312233A1 (en) * 2011-06-10 2012-12-13 Ge Yi Magnetically Enhanced Thin Film Coating Method and Apparatus
JP5781408B2 (en) * 2011-09-07 2015-09-24 株式会社アルバック Magnetron sputter cathode
US20140246311A1 (en) * 2013-03-01 2014-09-04 Poole Ventura, Inc. In-situ sputtering apparatus
US9368330B2 (en) 2014-05-02 2016-06-14 Bh5773 Ltd Sputtering targets and methods
US9613777B2 (en) * 2014-09-11 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Uniformity control using adjustable internal antennas
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KR102037065B1 (en) 2015-08-21 2019-10-28 한국과학기술연구원 Apparatus for coating inner surface of metallic tube and method for the same
US9546837B1 (en) 2015-10-09 2017-01-17 Bh5773 Ltd Advanced gun barrel
US20190032197A1 (en) * 2016-02-17 2019-01-31 Innohance Co., Ltd. Cathode for plasma treatment apparatus
CN112272858B (en) 2018-06-08 2025-02-25 科诺西斯泰克有限责任公司 Machines for depositing materials by means of cathode sputtering technology
EP4195236B1 (en) 2021-12-09 2024-02-21 Platit AG Magnetron sputtering apparatus with a movable magnetic field and method of operating the magnetron sputtering apparatus
DE202022107147U1 (en) * 2022-12-21 2023-01-18 VON ARDENNE Asset GmbH & Co. KG Magnet system arrangement, processing device and vacuum arrangement
CN115976484B (en) * 2022-12-28 2024-11-29 江苏芯德半导体科技股份有限公司 Sputtering process stability assessment method

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Also Published As

Publication number Publication date
US6436252B1 (en) 2002-08-20
WO2001077402A3 (en) 2002-03-28
WO2001077402A2 (en) 2001-10-18
EP1273028A2 (en) 2003-01-08

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