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AU1470200A - Field effect transistor structure with abrupt source/drain junctions - Google Patents

Field effect transistor structure with abrupt source/drain junctions

Info

Publication number
AU1470200A
AU1470200A AU14702/00A AU1470200A AU1470200A AU 1470200 A AU1470200 A AU 1470200A AU 14702/00 A AU14702/00 A AU 14702/00A AU 1470200 A AU1470200 A AU 1470200A AU 1470200 A AU1470200 A AU 1470200A
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
transistor structure
drain junctions
abrupt source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU14702/00A
Inventor
Robert S Chau
Chia-Hong Jan
Patrick Morrow
Anand S. Murthy
Paul Packan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU1470200A publication Critical patent/AU1470200A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H10P14/20—
    • H10P14/3411—
AU14702/00A 1998-11-12 1999-11-05 Field effect transistor structure with abrupt source/drain junctions Abandoned AU1470200A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19107698A 1998-11-12 1998-11-12
US09191076 1998-11-12
PCT/US1999/026224 WO2000030169A1 (en) 1998-11-12 1999-11-05 Field effect transistor structure with abrupt source/drain junctions

Publications (1)

Publication Number Publication Date
AU1470200A true AU1470200A (en) 2000-06-05

Family

ID=22704043

Family Applications (1)

Application Number Title Priority Date Filing Date
AU14702/00A Abandoned AU1470200A (en) 1998-11-12 1999-11-05 Field effect transistor structure with abrupt source/drain junctions

Country Status (6)

Country Link
EP (1) EP1147552A1 (en)
JP (1) JP2002530864A (en)
KR (1) KR20010080432A (en)
AU (1) AU1470200A (en)
IL (1) IL143078A0 (en)
WO (1) WO2000030169A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887762B1 (en) * 1998-11-12 2005-05-03 Intel Corporation Method of fabricating a field effect transistor structure with abrupt source/drain junctions
KR100406537B1 (en) * 2001-12-03 2003-11-20 주식회사 하이닉스반도체 Method for fabricating semiconductor device
JP3651802B2 (en) 2002-09-12 2005-05-25 株式会社東芝 Manufacturing method of semiconductor device
US6787864B2 (en) * 2002-09-30 2004-09-07 Advanced Micro Devices, Inc. Mosfets incorporating nickel germanosilicided gate and methods for their formation
US6921913B2 (en) * 2003-03-04 2005-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel transistor structure with lattice-mismatched zone
FR2854276A1 (en) * 2003-04-24 2004-10-29 Koninkl Philips Electronics Nv SEMICONDUCTOR DEVICE COMPRISING EXTENSIONS MADE OF A MATERIAL HAVING LOW FUSION TEMPERATURE.
US7012024B2 (en) * 2003-08-15 2006-03-14 Micron Technology, Inc. Methods of forming a transistor with an integrated metal silicide gate electrode
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7060576B2 (en) * 2003-10-24 2006-06-13 Intel Corporation Epitaxially deposited source/drain
US7244654B2 (en) * 2003-12-31 2007-07-17 Texas Instruments Incorporated Drive current improvement from recessed SiGe incorporation close to gate
FR2868209B1 (en) 2004-03-25 2006-06-16 Commissariat Energie Atomique FIELD-FIELD FIELD EFFECT TRANSISTOR DIAMOND CARBON
US7118952B2 (en) 2004-07-14 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making transistor with strained source/drain
JP5203558B2 (en) 2004-08-20 2013-06-05 三星電子株式会社 Transistor and manufacturing method thereof
US7195985B2 (en) 2005-01-04 2007-03-27 Intel Corporation CMOS transistor junction regions formed by a CVD etching and deposition sequence
JP4515305B2 (en) 2005-03-29 2010-07-28 富士通セミコンダクター株式会社 P-channel MOS transistor and method for manufacturing the same, and method for manufacturing a semiconductor integrated circuit device
JP4984665B2 (en) 2005-06-22 2012-07-25 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
US7579617B2 (en) 2005-06-22 2009-08-25 Fujitsu Microelectronics Limited Semiconductor device and production method thereof
KR100721245B1 (en) * 2005-12-29 2007-05-22 동부일렉트로닉스 주식회사 Transistor element and formation method
US7618866B2 (en) * 2006-06-09 2009-11-17 International Business Machines Corporation Structure and method to form multilayer embedded stressors
JP5181466B2 (en) 2006-11-16 2013-04-10 ソニー株式会社 Semiconductor device manufacturing method and semiconductor device
JP2010010587A (en) * 2008-06-30 2010-01-14 Toshiba Corp Semiconductor element and method of manufacturing semiconductor element
JP6797771B2 (en) 2017-09-15 2020-12-09 株式会社東芝 Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714685A (en) * 1986-12-08 1987-12-22 General Motors Corporation Method of fabricating self-aligned silicon-on-insulator like devices
US4870029A (en) * 1987-10-09 1989-09-26 American Telephone And Telegraph Company, At&T-Technologies, Inc. Method of forming complementary device structures in partially processed dielectrically isolated wafers
US5300447A (en) * 1992-09-29 1994-04-05 Texas Instruments Incorporated Method of manufacturing a minimum scaled transistor
JP2606141B2 (en) * 1994-06-16 1997-04-30 日本電気株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
KR20010080432A (en) 2001-08-22
WO2000030169A1 (en) 2000-05-25
JP2002530864A (en) 2002-09-17
EP1147552A1 (en) 2001-10-24
IL143078A0 (en) 2002-04-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase