[go: up one dir, main page]

AU1141299A - P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule - Google Patents

P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule

Info

Publication number
AU1141299A
AU1141299A AU11412/99A AU1141299A AU1141299A AU 1141299 A AU1141299 A AU 1141299A AU 11412/99 A AU11412/99 A AU 11412/99A AU 1141299 A AU1141299 A AU 1141299A AU 1141299 A AU1141299 A AU 1141299A
Authority
AU
Australia
Prior art keywords
macromolecule
silicon macromolecule
basis
producing
carrying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU11412/99A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19739491A external-priority patent/DE19739491A1/en
Priority claimed from DE19743755A external-priority patent/DE19743755A1/en
Priority claimed from DE19746395A external-priority patent/DE19746395A1/en
Application filed by Individual filed Critical Individual
Publication of AU1141299A publication Critical patent/AU1141299A/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
AU11412/99A 1997-09-09 1998-09-09 P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule Abandoned AU1141299A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE19739491 1997-09-09
DE19739491A DE19739491A1 (en) 1997-09-09 1997-09-09 Transistor has a complex crystalline macromolecular base
DE19743755A DE19743755A1 (en) 1997-10-02 1997-10-02 Polyhedral p-doped silicon macromolecule used as semiconductor device barrier layer
DE19743755 1997-10-02
DE19746395 1997-10-21
DE19746395A DE19746395A1 (en) 1997-10-21 1997-10-21 Polyhedral p-doped silicon macromolecule used as semiconductor device barrier layer
PCT/DE1998/002668 WO1999013511A2 (en) 1997-09-09 1998-09-09 P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule

Publications (1)

Publication Number Publication Date
AU1141299A true AU1141299A (en) 1999-03-29

Family

ID=27217729

Family Applications (1)

Application Number Title Priority Date Filing Date
AU11412/99A Abandoned AU1141299A (en) 1997-09-09 1998-09-09 P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule

Country Status (3)

Country Link
AU (1) AU1141299A (en)
DE (1) DE19881312D2 (en)
WO (1) WO1999013511A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7015546B2 (en) * 2000-02-23 2006-03-21 Semiconductor Research Corporation Deterministically doped field-effect devices and methods of making same
US6664559B1 (en) * 2000-02-23 2003-12-16 Semiconductor Research Corporation Supermolecular structures and devices made from same
DE112012004803B4 (en) 2011-11-17 2022-03-03 Gentherm Inc. Thermoelectric device with interface materials and method of making the same
US11223004B2 (en) 2018-07-30 2022-01-11 Gentherm Incorporated Thermoelectric device having a polymeric coating

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213781A (en) * 1978-11-20 1980-07-22 Westinghouse Electric Corp. Deposition of solid semiconductor compositions and novel semiconductor materials
JP2723099B2 (en) * 1995-12-28 1998-03-09 日本電気株式会社 Clathrate compound and method for producing the same

Also Published As

Publication number Publication date
WO1999013511A3 (en) 1999-05-06
DE19881312D2 (en) 2001-01-18
WO1999013511A2 (en) 1999-03-18

Similar Documents

Publication Publication Date Title
AU7096696A (en) Semiconductor device, process for producing the same, and packaged substrate
AU8036898A (en) Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
AU6946196A (en) Semiconductor material, method of producing the semiconductor material, and semiconductor device
AU4726397A (en) Semiconductor device and method for manufacturing the same
AU2001267880A1 (en) Semiconductor device and method for fabricating the same
AU7589196A (en) Semiconductor device and process for manufacturing the same
EP0977259A3 (en) Semiconductor device and method of producing the same
AU1683800A (en) Semiconductor device and production method thereof
EP0729044A3 (en) Optical fiber-fixing substrate, method of producing the same and optical device
AU1579697A (en) Semiconductor devices, and methods for same
AU1429501A (en) Integrated optical device, and method of formation
AU8747698A (en) Positioning device, driving unit, and aligner equipped with the device
EP0862208A3 (en) Semiconductor device and method of manufacturing the same
AU5659996A (en) Semiconductor device
AU2002219529A1 (en) Semiconductor device and method for fabricating the same
EP1087040A4 (en) Method for producing silicon single crystal and apparatus for producing the same, and single crystal and wafer produced with the method
AU2001287141A1 (en) Semiconductor device and process for forming the same
SG74643A1 (en) Semiconductor device and method for fabricating the same
AU2002220666A1 (en) Method for depositing especially, crystalline layers and device for carrying out the method
AU2001276981A1 (en) Semiconductor device and a process for forming the same
EP0779662A3 (en) Semiconductor device with bipolar structure and method of fabricating the same
AU2962099A (en) Exposure method, exposure apparatus, method of producing the same, device, and method of fabricating the same
EP1318581A1 (en) Semiconductor laser device and method for manufacturing the same
AU2001257346A1 (en) Semiconductor device and method for manufacturing the same
AU5520996A (en) A micromachined structure and use thereof, and a micromachin ed device and a method for the manufacture thereof

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase