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ATE306119T1 - Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben - Google Patents

Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben

Info

Publication number
ATE306119T1
ATE306119T1 AT01919912T AT01919912T ATE306119T1 AT E306119 T1 ATE306119 T1 AT E306119T1 AT 01919912 T AT01919912 T AT 01919912T AT 01919912 T AT01919912 T AT 01919912T AT E306119 T1 ATE306119 T1 AT E306119T1
Authority
AT
Austria
Prior art keywords
semiconductor
heat dissipation
production method
same
dissipation plate
Prior art date
Application number
AT01919912T
Other languages
English (en)
Inventor
Mitsuo Osada
Norio Hirayama
Tadashi Arikawa
Yoshinari Amano
Hidetoshi Maesato
Hidefumi Hayashi
Hiroshi Murai
Original Assignee
Almt Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000372405A external-priority patent/JP3856640B2/ja
Application filed by Almt Corp filed Critical Almt Corp
Application granted granted Critical
Publication of ATE306119T1 publication Critical patent/ATE306119T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0475—Impregnated alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H10W40/258—
    • H10W70/027—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • H10W72/884—
    • H10W76/134—
    • H10W90/756—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
AT01919912T 2000-04-14 2001-04-12 Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben ATE306119T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000113006 2000-04-14
JP2000372405A JP3856640B2 (ja) 2000-01-26 2000-12-07 半導体搭載用放熱基板材料、その製造方法、及びそれを用いたセラミックパッケージ
PCT/JP2001/003164 WO2001080313A1 (fr) 2000-04-14 2001-04-12 Materiau de plaque de dissipation thermique sur laquelle est monte un semi-conducteur, procede de fabrication et boitier ceramique obtenu

Publications (1)

Publication Number Publication Date
ATE306119T1 true ATE306119T1 (de) 2005-10-15

Family

ID=26590109

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01919912T ATE306119T1 (de) 2000-04-14 2001-04-12 Material für eine wärme-abführende platte auf der ein halbleiter montiert ist, herstellungsmethode und keramisches gehäuse,produziert unter verwendung derselben

Country Status (4)

Country Link
EP (2) EP1231633B1 (de)
AT (1) ATE306119T1 (de)
DE (1) DE60113797T2 (de)
WO (1) WO2001080313A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005046404B4 (de) 2005-09-28 2008-12-24 Infineon Technologies Ag Verfahren zur Minderung von Streuungen in der Durchbiegung von gewalzten Bodenplatten und Leistungshalbleitermodul mit einer nach diesem Verfahren hergestellten Bodenplatte
WO2007094507A1 (ja) * 2006-02-15 2007-08-23 Jfe Precision Corporation Cr-Cu合金、その製造方法、半導体用放熱板および半導体用放熱部品
US20090035632A1 (en) * 2007-07-31 2009-02-05 Kirkwood Brad L Solid oxide fuel cell electrode systems and methods
KR101679104B1 (ko) 2009-10-01 2016-11-23 제이에프이 세이미츠 가부시키가이샤 전자 기기용 히트 싱크 및 그의 제조 프로세스
CN102489508A (zh) * 2011-12-06 2012-06-13 无锡乐普金属科技有限公司 钼铜合金箔片的交叉轧制方法
CN102601116A (zh) * 2012-03-19 2012-07-25 长沙升华微电子材料有限公司 一种铜基电子封装材料的制备方法
CN103143714B (zh) * 2013-03-29 2015-01-14 西北有色金属研究院 一种Cu/MoCu/Cu三层复合板坯的制备方法
JP5818045B1 (ja) * 2014-12-05 2015-11-18 株式会社半導体熱研究所 放熱基板と、それを使用した半導体パッケージと半導体モジュール
JP6455896B1 (ja) * 2017-11-18 2019-01-23 Jfe精密株式会社 放熱板及びその製造方法
EP3770960A4 (de) * 2018-03-23 2022-10-19 Mitsubishi Materials Corporation Modul mit montierter elektronischer komponente

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3426916A1 (de) * 1984-07-21 1986-01-23 Vacuumschmelze Gmbh, 6450 Hanau Verfahren zur herstellung eines verbundwerkstoffes
JP2746279B2 (ja) * 1990-06-18 1998-05-06 日本タングステン 株式会社 半導体装置用基板材料及びその製造方法
US5493153A (en) * 1992-11-26 1996-02-20 Tokyo Tungsten Co., Ltd. Plastic-packaged semiconductor device having a heat sink matched with a plastic package
JPH0892667A (ja) * 1994-09-22 1996-04-09 Tokyo Tungsten Co Ltd 金属複合材料及びその製造方法
JP3482580B2 (ja) * 1995-11-28 2003-12-22 株式会社アライドマテリアル 高放熱性金属複合板材及びそれを用いた高放熱性金属基板
JP3548991B2 (ja) * 1997-08-22 2004-08-04 株式会社アライドマテリアル 放熱基板及びその製造方法
JP2000026926A (ja) * 1998-07-08 2000-01-25 Tokyo Tungsten Co Ltd リードフレーム用複合材とそれを用いた半導体パッケージ

Also Published As

Publication number Publication date
WO2001080313A1 (fr) 2001-10-25
DE60113797D1 (de) 2006-02-16
EP1231633B1 (de) 2005-10-05
EP1231633A4 (de) 2003-05-28
EP1231633A1 (de) 2002-08-14
EP1553627A1 (de) 2005-07-13
DE60113797T2 (de) 2006-06-08

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