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AR079858A1 - Conversion de fotones con alto contenido energetico en electricidad - Google Patents

Conversion de fotones con alto contenido energetico en electricidad

Info

Publication number
AR079858A1
AR079858A1 ARP110100050A AR079858A1 AR 079858 A1 AR079858 A1 AR 079858A1 AR P110100050 A ARP110100050 A AR P110100050A AR 079858 A1 AR079858 A1 AR 079858A1
Authority
AR
Argentina
Prior art keywords
high energy
energy content
layers
photons
conversion
Prior art date
Application number
Other languages
English (en)
Inventor
Tajima Toshiki
Binderbauer Michi
Original Assignee
Tri Alpha Energy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tri Alpha Energy Inc filed Critical Tri Alpha Energy Inc
Publication of AR079858A1 publication Critical patent/AR079858A1/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/28—Measuring radiation intensity with secondary-emission detectors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04—Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Particle Accelerators (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • X-Ray Techniques (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Luminescent Compositions (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

Sistemas y métodos para la conversion de energía de fotones con alto contenido energético que utilizan una serie de materiales con diferentes cargas atomicas para tomar ventaja de la emision de una gran multiplicidad de electrones por un unico foton con alto contenido energético vía una cascada de emisiones de electrones Auger. En una realizacion, un convertidor de fotones con alto contenido energético incluye un disco a escala nanométrica linealmente estratificado hecho con capas de un primer material atrapado entre capas de un segundo material que tiene un numero de carga atomica diferente del numero de carga atomica del primer material. En otras realizaciones, las capas a escala nanométrica están configuradas en una configuracion tubular o tipo caparazon y/o incluyen un tercer material aislante.
ARP110100050 2010-01-08 2011-01-07 Conversion de fotones con alto contenido energetico en electricidad AR079858A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29328210P 2010-01-08 2010-01-08

Publications (1)

Publication Number Publication Date
AR079858A1 true AR079858A1 (es) 2012-02-22

Family

ID=44305761

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP110100050 AR079858A1 (es) 2010-01-08 2011-01-07 Conversion de fotones con alto contenido energetico en electricidad

Country Status (20)

Country Link
US (3) US9324897B2 (es)
EP (1) EP2522033B1 (es)
JP (3) JP6097563B2 (es)
KR (1) KR101962974B1 (es)
CN (2) CN107123692B (es)
AR (1) AR079858A1 (es)
AU (2) AU2010339631B2 (es)
BR (1) BR112012016873B1 (es)
CA (1) CA2786590C (es)
EA (1) EA025124B1 (es)
ES (1) ES2705690T3 (es)
IL (2) IL220819A (es)
MX (1) MX2012007991A (es)
NZ (1) NZ601448A (es)
PH (1) PH12012501379A1 (es)
SG (1) SG182383A1 (es)
TW (2) TWI552362B (es)
UA (1) UA111585C2 (es)
WO (1) WO2011084903A1 (es)
ZA (1) ZA201205568B (es)

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Also Published As

Publication number Publication date
CN107123692A (zh) 2017-09-01
US9324897B2 (en) 2016-04-26
TW201145535A (en) 2011-12-16
JP6327722B2 (ja) 2018-05-23
EP2522033A4 (en) 2016-04-20
EA025124B1 (ru) 2016-11-30
UA111585C2 (uk) 2016-05-25
JP2018028552A (ja) 2018-02-22
EP2522033A1 (en) 2012-11-14
US9570644B2 (en) 2017-02-14
WO2011084903A1 (en) 2011-07-14
JP2013516624A (ja) 2013-05-13
US9893226B2 (en) 2018-02-13
CA2786590C (en) 2019-04-30
AU2016201030B2 (en) 2017-03-23
KR101962974B1 (ko) 2019-03-27
CN102859706A (zh) 2013-01-02
SG182383A1 (en) 2012-08-30
CN107123692B (zh) 2020-02-11
AU2010339631A1 (en) 2012-08-09
MX2012007991A (es) 2012-12-10
AU2016201030A1 (en) 2016-03-10
CA2786590A1 (en) 2011-07-14
ZA201205568B (en) 2013-09-25
AU2010339631B2 (en) 2015-11-19
JP6097563B2 (ja) 2017-03-15
TWI552362B (zh) 2016-10-01
US20160218235A1 (en) 2016-07-28
CN102859706B (zh) 2016-10-26
IL220819A (en) 2017-02-28
US20130125963A1 (en) 2013-05-23
PH12012501379A1 (en) 2012-10-22
JP2016148683A (ja) 2016-08-18
BR112012016873A2 (pt) 2018-06-05
US20170236967A1 (en) 2017-08-17
BR112012016873B1 (pt) 2020-10-20
TW201507176A (zh) 2015-02-16
ES2705690T3 (es) 2019-03-26
IL250054B (en) 2021-04-29
TWI463681B (zh) 2014-12-01
IL250054A0 (en) 2017-03-30
KR20120134107A (ko) 2012-12-11
EA201290620A1 (ru) 2013-01-30
EP2522033B1 (en) 2018-11-14
NZ601448A (en) 2014-09-26

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