[go: up one dir, main page]

NO992688L - Sensor structure and method for interconnecting isolated structures - Google Patents

Sensor structure and method for interconnecting isolated structures

Info

Publication number
NO992688L
NO992688L NO992688A NO992688A NO992688L NO 992688 L NO992688 L NO 992688L NO 992688 A NO992688 A NO 992688A NO 992688 A NO992688 A NO 992688A NO 992688 L NO992688 L NO 992688L
Authority
NO
Norway
Prior art keywords
devices
conductive bridge
pits
electrically insulated
necessary
Prior art date
Application number
NO992688A
Other languages
Norwegian (no)
Other versions
NO992688D0 (en
Inventor
Lisa Z Zhang
Guang X Li
Paul L Bergstrom
Juergen A Foerstner
Muh-Ling Ger
John E Schmiesing
Jr Frank A Shemansky
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of NO992688D0 publication Critical patent/NO992688D0/en
Publication of NO992688L publication Critical patent/NO992688L/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)

Abstract

Sensor (10) med en ledende bro (30-34) over ei åpen grop (22) for elektrisk forbindelse mellom anordninger (24, 26) i en integrert krets. Den ledende broen er nyttig i sensorer hvor det er nodvendig å måle elektriske størrelser så som en differensialkapasitans mellom elektriske isolerte anordninger. Anordningene blir elektrisk isolerte ved å danne ei åpen grop langs sidene. Bunnene på anordningene er elektrisk isolert med et oksidlag (42). En ledende bro dannes ved å først fylle gropene med offerglass for å gi et fast fundament som polysilisiumledeme kan legges på, og deretter fjerne offerglasset for å danne den ledende broen over de åpne gropene. Gropene gir den nødvendige isoleringen og de ledende broene gir den nødvendige elektriske forbindelsen.Sensor (10) with a conductive bridge (30-34) over an open pit (22) for electrical connection between devices (24, 26) in an integrated circuit. The conductive bridge is useful in sensors where it is necessary to measure electrical sizes such as a differential capacitance between electrically insulated devices. The devices are electrically insulated by forming an open pit along the sides. The bottoms of the devices are electrically insulated with an oxide layer (42). A conductive bridge is formed by first filling the pits with sacrificial glass to provide a firm foundation on which the polysilicon members can be laid, and then removing the sacrificial glass to form the conductive bridge over the open pits. The pits provide the necessary insulation and the conductive bridges provide the necessary electrical connection.

NO992688A 1998-06-26 1999-06-03 Sensor structure and method for interconnecting isolated structures NO992688L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10594398A 1998-06-26 1998-06-26

Publications (2)

Publication Number Publication Date
NO992688D0 NO992688D0 (en) 1999-06-03
NO992688L true NO992688L (en) 1999-12-27

Family

ID=22308652

Family Applications (1)

Application Number Title Priority Date Filing Date
NO992688A NO992688L (en) 1998-06-26 1999-06-03 Sensor structure and method for interconnecting isolated structures

Country Status (3)

Country Link
JP (1) JP2000031503A (en)
DE (1) DE19928291A1 (en)
NO (1) NO992688L (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10029012C2 (en) * 2000-06-13 2002-06-06 Amtec Gmbh Microstructure and process for its manufacture
FR2880128B1 (en) * 2004-12-29 2007-02-02 Commissariat Energie Atomique MICRO-FACTORY ACCELEROMETER WITH CAPACITIVE FEEDERS
DE102005052087A1 (en) * 2005-10-28 2007-05-03 Kmw Kaufbeurer Mikrosysteme Wiedemann Gmbh sensor
US8138007B2 (en) 2009-08-26 2012-03-20 Freescale Semiconductor, Inc. MEMS device with stress isolation and method of fabrication
DE102010043980A1 (en) * 2010-11-16 2011-09-01 Robert Bosch Gmbh Sensor i.e. gyroscope, has micromechanical structure comprising substrate, structure firmly connected with substrate, and another structure movably arranged at substrate, where latter structure is formed for enclosing former structure
US11757378B1 (en) * 2022-06-06 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Micromechanical arm array in micro-electromechanical system (MEMS) actuators

Also Published As

Publication number Publication date
NO992688D0 (en) 1999-06-03
JP2000031503A (en) 2000-01-28
DE19928291A1 (en) 1999-12-30

Similar Documents

Publication Publication Date Title
EP0920054A4 (en) SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD
ATE533178T1 (en) INTEGRATED CIRCUIT WITH CAPACITOR AND RELATED PRODUCTION METHOD
KR920015623A (en) Semiconductor device and manufacturing method
KR940027149A (en) Semiconductor Memory and Manufacturing Method Thereof
NO992688L (en) Sensor structure and method for interconnecting isolated structures
TW200601485A (en) Semiconductor device substrate with wmbedded capacitor
SE7609244L (en) ELECTRICALLY INSULATED GENERATION
KR910020924A (en) Semiconductor Device Containing Capacitive Element and Manufacturing Method Thereof
EP0028654A4 (en) Semiconductive memory device and fabricating method therefor.
JPS562654A (en) Semiconductor device
JPS63124542A (en) Semiconductor integrated circuit
Shin et al. H+, Na+, and K+ ion sensing properties of sodium and aluminum coimplanted LPCVD silicon oxynitride thin films
JPS6020552A (en) Semiconductor device
JPS5679245A (en) Ion sensor
JPS645055A (en) Image sensor
JPS6457668A (en) Charge coupled device
JPS548989A (en) Control rectifying device
KR960035818A (en) How to Form Contact Window
JPS57190362A (en) Semiconductor device
JPS54143076A (en) Semiconductor device and its manufacture
JPS6421965A (en) Mos transistor
JP2005197697A5 (en)
TW363254B (en) Structure and manufacturing method for tunnel type electrode capacitors
KR960026866A (en) Semiconductor device manufacturing method
JPH08125165A (en) Charge-coupled device and manufacture thereof

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application