NO985623L - Tynnfilmtransistor og fremgangsmÕte for fremstilling av samme - Google Patents
Tynnfilmtransistor og fremgangsmÕte for fremstilling av sammeInfo
- Publication number
- NO985623L NO985623L NO985623A NO985623A NO985623L NO 985623 L NO985623 L NO 985623L NO 985623 A NO985623 A NO 985623A NO 985623 A NO985623 A NO 985623A NO 985623 L NO985623 L NO 985623L
- Authority
- NO
- Norway
- Prior art keywords
- thin film
- film transistor
- making same
- making
- same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9333883A JPH11168216A (ja) | 1997-12-04 | 1997-12-04 | 薄膜トランジスタおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO985623D0 NO985623D0 (no) | 1998-12-02 |
| NO985623L true NO985623L (no) | 1999-06-07 |
Family
ID=18271027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO985623A NO985623L (no) | 1997-12-04 | 1998-12-02 | Tynnfilmtransistor og fremgangsmÕte for fremstilling av samme |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6184541B1 (no) |
| EP (1) | EP0921576A3 (no) |
| JP (1) | JPH11168216A (no) |
| NO (1) | NO985623L (no) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020060322A1 (en) * | 2000-11-20 | 2002-05-23 | Hiroshi Tanabe | Thin film transistor having high mobility and high on-current and method for manufacturing the same |
| KR100483985B1 (ko) * | 2001-11-27 | 2005-04-15 | 삼성에스디아이 주식회사 | 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스 |
| KR100501700B1 (ko) | 2002-12-16 | 2005-07-18 | 삼성에스디아이 주식회사 | 엘디디/오프셋 구조를 구비하고 있는 박막 트랜지스터 |
| TW200537573A (en) * | 2004-04-23 | 2005-11-16 | Ulvac Inc | Thin-film transistor and production method thereof |
| KR102044667B1 (ko) * | 2013-05-28 | 2019-11-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05308081A (ja) | 1992-04-30 | 1993-11-19 | Toshiba Corp | 多結晶シリコン薄膜トランジスタおよびその製造方法 |
| JPH098314A (ja) | 1995-06-26 | 1997-01-10 | Sharp Corp | 薄膜トランジスタ |
-
1997
- 1997-12-04 JP JP9333883A patent/JPH11168216A/ja active Pending
-
1998
- 1998-11-30 EP EP98122700A patent/EP0921576A3/en not_active Withdrawn
- 1998-12-02 NO NO985623A patent/NO985623L/no not_active Application Discontinuation
- 1998-12-03 US US09/205,775 patent/US6184541B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6184541B1 (en) | 2001-02-06 |
| NO985623D0 (no) | 1998-12-02 |
| JPH11168216A (ja) | 1999-06-22 |
| EP0921576A2 (en) | 1999-06-09 |
| EP0921576A3 (en) | 1999-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |