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NO904274L - Nitridprodukter, fremgangsmaate til deres fremstilling og apparat til utfoerelse av fremgangsmaaten. - Google Patents

Nitridprodukter, fremgangsmaate til deres fremstilling og apparat til utfoerelse av fremgangsmaaten.

Info

Publication number
NO904274L
NO904274L NO90904274A NO904274A NO904274L NO 904274 L NO904274 L NO 904274L NO 90904274 A NO90904274 A NO 90904274A NO 904274 A NO904274 A NO 904274A NO 904274 L NO904274 L NO 904274L
Authority
NO
Norway
Prior art keywords
product
procedure
nitride compound
products
injected
Prior art date
Application number
NO90904274A
Other languages
English (en)
Other versions
NO904274D0 (no
Inventor
Bruce William Gerhold
George Francis Schuette
Kenneth E Inkrott
Original Assignee
Phillips Petroleum Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phillips Petroleum Co filed Critical Phillips Petroleum Co
Publication of NO904274D0 publication Critical patent/NO904274D0/no
Publication of NO904274L publication Critical patent/NO904274L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/86—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by NMR- or ESR-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Products (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

En fremgangsmåte og et apparat for fremstilling av et produkt som omfatter en nitridforbindelse, såsom silisium- nitrid, er beskrevet. En reaktor er skaffet med et kammer avgrenset deri som er inndelt i en forbrenningssone og en reaksjonssone. En brennbar blanding injiseres inn i forbrenningssonen og ; forbrennes for dannelse av varme forbrenningsprodukter. Minst en reaktant (dvs. silan) injiseres ved grenseområdet mellom sonene slik at den fares inn i reaksjonssonen av forbrenningsproduktene og reagerer for dannelse av et råprodukt ; som omfatter nitridforbindelsen. i Råproduktet kan renses ved etterfølgende 1 behandling for å fjerne oksygen og 1 omdanne biprodukter til den ønskede nitridforbindelse. Produktet ifølge oppfinnelsen har et lavt nivå av urenheter og er fremstilt av meget ensartede partikler stort sett med en størrelse på under l pm. Dette gjør produktet spesielt nyttig for fremstilling av sintrede keramiske deler.
NO90904274A 1989-10-02 1990-10-01 Nitridprodukter, fremgangsmaate til deres fremstilling og apparat til utfoerelse av fremgangsmaaten. NO904274L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/416,190 US5176893A (en) 1989-10-02 1989-10-02 Silicon nitride products and method for their production

Publications (2)

Publication Number Publication Date
NO904274D0 NO904274D0 (no) 1990-10-01
NO904274L true NO904274L (no) 1991-04-03

Family

ID=23648951

Family Applications (1)

Application Number Title Priority Date Filing Date
NO90904274A NO904274L (no) 1989-10-02 1990-10-01 Nitridprodukter, fremgangsmaate til deres fremstilling og apparat til utfoerelse av fremgangsmaaten.

Country Status (12)

Country Link
US (1) US5176893A (no)
EP (1) EP0425825B1 (no)
JP (1) JP2644620B2 (no)
KR (1) KR970008980B1 (no)
AT (1) ATE161520T1 (no)
AU (1) AU625164B2 (no)
CA (1) CA2020508C (no)
DE (1) DE69031859T2 (no)
DK (1) DK0425825T3 (no)
ES (1) ES2110402T3 (no)
GR (1) GR3025939T3 (no)
NO (1) NO904274L (no)

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US5178844A (en) * 1990-04-03 1993-01-12 Phillips Petroleum Company Method and apparatus for producing nitride products
US5302366A (en) * 1991-03-28 1994-04-12 Phillips Petroleum Company Production of silicon product containing both carbon and nitrogen
DE69213898T2 (de) 1991-12-13 1997-02-06 Ford Werke Ag Metallnitridfilm
US5352395A (en) * 1992-07-17 1994-10-04 Phillips Petroleum Company Carbon and ceramic-containing layers for use in sintering of silicon nitride article
FR2708924B1 (fr) * 1993-08-12 1995-10-20 Saint Gobain Vitrage Int Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent.
FR2759362B1 (fr) 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
US6517341B1 (en) * 1999-02-26 2003-02-11 General Electric Company Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments
US20030188475A1 (en) * 2002-03-29 2003-10-09 Shabbir Ahmed Dynamic fuel processor with controlled declining temperatures
JP2007301687A (ja) * 2006-05-12 2007-11-22 Naoetsu Electronics Co Ltd ワーク切断装置
JP2008200772A (ja) * 2007-02-16 2008-09-04 Sharp Corp ワイヤソーおよびそれを用いたスラリーの再使用方法
JP2008213111A (ja) * 2007-03-06 2008-09-18 Sharp Corp マルチワイヤーソーおよびスラリー供給方法
US20100258233A1 (en) * 2007-11-06 2010-10-14 Mitsubishi Materials Corporation Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate
DE102012223195A1 (de) 2012-12-14 2014-06-18 Evonik Industries Ag Hochreine pulverförmige Halbmetallcarbid- und Halbmetallnitridverbindungen, Verfahren zu deren Herstellung und dafür geeigneter Reaktor
SG11201510759WA (en) * 2013-07-11 2016-02-26 Ube Industries Silicon nitride powder for mold release agent of casting mold for casting polycrystalline silicon ingot and method for manufacturing said silicon nitride powder, slurry containing said silicon nitride powder, casting mold for casting polycrystalline silicon ingot and method for manufacturing same, and method for manufacturing polycrystalline silicon ingot using said casting mold

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Also Published As

Publication number Publication date
AU625164B2 (en) 1992-07-02
ATE161520T1 (de) 1998-01-15
KR910007799A (ko) 1991-05-30
KR970008980B1 (en) 1997-06-03
CA2020508C (en) 1998-09-29
JPH03126605A (ja) 1991-05-29
DE69031859T2 (de) 1998-04-16
US5176893A (en) 1993-01-05
ES2110402T3 (es) 1998-02-16
AU6240090A (en) 1991-08-01
DK0425825T3 (da) 1998-01-19
DE69031859D1 (de) 1998-02-05
JP2644620B2 (ja) 1997-08-25
EP0425825B1 (en) 1997-12-29
GR3025939T3 (en) 1998-04-30
CA2020508A1 (en) 1991-04-03
NO904274D0 (no) 1990-10-01
EP0425825A1 (en) 1991-05-08

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