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NO20080929L - Anordning for elektromagnetisk silisiumstoping og fremgangsmate for a drifte denne anordning - Google Patents

Anordning for elektromagnetisk silisiumstoping og fremgangsmate for a drifte denne anordning

Info

Publication number
NO20080929L
NO20080929L NO20080929A NO20080929A NO20080929L NO 20080929 L NO20080929 L NO 20080929L NO 20080929 A NO20080929 A NO 20080929A NO 20080929 A NO20080929 A NO 20080929A NO 20080929 L NO20080929 L NO 20080929L
Authority
NO
Norway
Prior art keywords
induction
silicon
power source
frequency
electromagnetic
Prior art date
Application number
NO20080929A
Other languages
English (en)
Inventor
Kyojiro Kaneko
Original Assignee
Sumco Solar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Solar Corp filed Critical Sumco Solar Corp
Publication of NO20080929L publication Critical patent/NO20080929L/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/01—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces
    • B22D11/015—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces using magnetic field for conformation, i.e. the metal is not in contact with a mould
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/001—Continuous casting of metals, i.e. casting in indefinite lengths of specific alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/16—Controlling or regulating processes or operations
    • B22D11/18—Controlling or regulating processes or operations for pouring
    • B22D11/181—Controlling or regulating processes or operations for pouring responsive to molten metal level or slag level
    • B22D11/182—Controlling or regulating processes or operations for pouring responsive to molten metal level or slag level by measuring temperature
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

En fremgangsmåte for å drifte en elektromagnetisk støpeanordning for silisium tar i betraktning: målinger av overflatetemperaturen til støpeblokken og temperaturen til varmeovnen; regulering av induksjonsfrekvensen for den elektromagnetiske støpeprosessen; regulering av utgangseffekten for kraftkilden til oppvarmingsanordningen basert på den målte overflatetemperaturen til det størknede silisiumet; og regulering av induksjonsfrekvensen for induksjonskraftkilden basert på den målte induksjonsfrekvensen til kraftkilden til induksjonsspolen; følgelig er det mulig å sikre en bemerkelsesverdig sikkerhet og produktivitet ved kontinuerlig støping av silisiumblokken, og dermed gjøre det mulig å lette produksjon av en polykrystallinsk silisiumhalvlederblokk, som har bred anvendelse for sikker drift.
NO20080929A 2005-08-19 2008-02-25 Anordning for elektromagnetisk silisiumstoping og fremgangsmate for a drifte denne anordning NO20080929L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2005/015132 WO2007020706A1 (ja) 2005-08-19 2005-08-19 シリコン電磁鋳造装置およびその操作方法

Publications (1)

Publication Number Publication Date
NO20080929L true NO20080929L (no) 2008-03-13

Family

ID=37757378

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20080929A NO20080929L (no) 2005-08-19 2008-02-25 Anordning for elektromagnetisk silisiumstoping og fremgangsmate for a drifte denne anordning

Country Status (5)

Country Link
US (1) US20090321996A1 (no)
EP (1) EP1930483A4 (no)
JP (1) JP4317575B2 (no)
NO (1) NO20080929L (no)
WO (1) WO2007020706A1 (no)

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KR101530106B1 (ko) * 2007-10-12 2015-06-18 아작스 토코 마그네서믹 코포레이션 반액상 금속 처리 및 감지 장치, 이의 이용 방법
US20100148403A1 (en) * 2008-12-16 2010-06-17 Bp Corporation North America Inc. Systems and Methods For Manufacturing Cast Silicon
US7888158B1 (en) 2009-07-21 2011-02-15 Sears Jr James B System and method for making a photovoltaic unit
UA95131C2 (uk) * 2009-08-25 2011-07-11 Частное Акционерное Общество «Пиллар» Спосіб одержання зливків мультикристалічного кремнію індукційним методом
CA2779659C (en) 2009-11-20 2020-05-05 Kyojiro Kaneko Silicon electromagnetic casting apparatus
JP2011173775A (ja) * 2010-02-25 2011-09-08 Sumco Corp シリコンインゴットの連続鋳造方法
CN101829767B (zh) * 2010-05-26 2013-10-09 丽达科技有限公司 硅电磁铸造装置
JP2012025600A (ja) * 2010-07-21 2012-02-09 Sumco Corp シリコンインゴットの電磁鋳造装置
CN102021645B (zh) * 2010-12-28 2012-07-04 哈尔滨工业大学 一种具有定向凝固组织多晶硅锭的制备方法
CN102094233B (zh) * 2010-12-28 2012-07-04 哈尔滨工业大学 一种具有定向凝固组织多晶硅锭的制备装置
CN102286778B (zh) * 2011-08-08 2014-02-19 宁夏日晶新能源装备股份有限公司 多晶炉红外测温装置及采用多晶炉红外测温装置的多晶炉
CN102286780B (zh) * 2011-08-30 2014-04-16 宁夏日晶新能源装备股份有限公司 多晶炉红外控温装置及采用多晶炉红外控温装置的多晶炉
CN102677165A (zh) * 2012-04-13 2012-09-19 浙江精功科技股份有限公司 多晶硅铸锭炉铸锭熔化状态检测方法及相应的检测装置
US9315917B2 (en) 2012-07-30 2016-04-19 Solar World Industries America Inc. Apparatus and method for the production of ingots
CN102797039A (zh) * 2012-08-21 2012-11-28 北京科技大学 一种利用电磁法生产超纯多晶硅锭的装置及方法
WO2019070699A1 (en) 2017-10-05 2019-04-11 Lam Research Corporation ELECTROMAGNETIC CASTING SYSTEMS COMPRISING FURNACES AND MOLDS FOR PRODUCING SILICON TUBES
JP6607652B1 (ja) 2018-03-29 2019-11-20 株式会社クリスタルシステム 単結晶製造装置
CN110546314B (zh) * 2018-03-29 2021-04-02 株式会社水晶系统 单晶制造装置
US11856678B2 (en) * 2019-10-29 2023-12-26 Senic Inc. Method of measuring a graphite article, apparatus for a measurement, and ingot growing system
JP2023122837A (ja) * 2022-02-24 2023-09-05 国立大学法人東北大学 結晶成長方法および装置
CN119772141B (zh) * 2024-12-23 2025-11-18 深圳市鸿富诚新材料股份有限公司 一种精准控温液态金属散热垫片高效制备方法

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US4446562A (en) * 1981-10-13 1984-05-01 Electric Power Rsearch Institute, Inc. Method and apparatus for measuring crucible level of molten metal
KR870000714B1 (ko) * 1981-11-18 1987-04-09 하세가와 겐고오 수평 연속 주조방법
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JP2660225B2 (ja) * 1988-08-11 1997-10-08 住友シチックス株式会社 シリコン鋳造装置
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EP0821082B1 (en) * 1996-06-27 1999-01-20 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Process and apparatus for controlling the growth of a crystal
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP2000264775A (ja) * 1999-03-23 2000-09-26 Sumitomo Sitix Amagasaki:Kk 電磁誘導鋳造装置
EP1254861B1 (en) * 2000-12-28 2008-01-30 Sumco Corporation Silicon continuous casting method

Also Published As

Publication number Publication date
JP4317575B2 (ja) 2009-08-19
EP1930483A1 (en) 2008-06-11
US20090321996A1 (en) 2009-12-31
EP1930483A4 (en) 2011-10-19
JPWO2007020706A1 (ja) 2009-02-19
WO2007020706A1 (ja) 2007-02-22

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ERR Erratum

Free format text: I PATENTTIDENDE NR. 14/09 BLE PATENTSOKNAD NR. 20080929 FEILAKTIG KUNNGJORT HENLAGT. SOKNADEN ER FORTSATT UNDER BEHANDLING.

FC2A Withdrawal, rejection or dismissal of laid open patent application