[go: up one dir, main page]

NO20050967L - Minneinnretning og fremgangsmater for a drive denne - Google Patents

Minneinnretning og fremgangsmater for a drive denne

Info

Publication number
NO20050967L
NO20050967L NO20050967A NO20050967A NO20050967L NO 20050967 L NO20050967 L NO 20050967L NO 20050967 A NO20050967 A NO 20050967A NO 20050967 A NO20050967 A NO 20050967A NO 20050967 L NO20050967 L NO 20050967L
Authority
NO
Norway
Prior art keywords
operating
methods
memory device
memory
Prior art date
Application number
NO20050967A
Other languages
English (en)
Other versions
NO20050967D0 (no
Inventor
Goran Gustafsson
Hans Gude Gudesen
Peter Dyreklev
Per-Erik Nordal
Isak Engquist
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20050967A priority Critical patent/NO20050967L/no
Publication of NO20050967D0 publication Critical patent/NO20050967D0/no
Priority to PCT/NO2006/000072 priority patent/WO2006091108A1/en
Priority to NO20060897A priority patent/NO20060897L/no
Publication of NO20050967L publication Critical patent/NO20050967L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
NO20050967A 2005-02-23 2005-02-23 Minneinnretning og fremgangsmater for a drive denne NO20050967L (no)

Priority Applications (3)

Application Number Priority Date Filing Date Title
NO20050967A NO20050967L (no) 2005-02-23 2005-02-23 Minneinnretning og fremgangsmater for a drive denne
PCT/NO2006/000072 WO2006091108A1 (en) 2005-02-23 2006-02-23 A memory device and methods for operating the same
NO20060897A NO20060897L (no) 2005-02-23 2006-02-23 Minneinnretning og fremgangsmater for a drive denne

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20050967A NO20050967L (no) 2005-02-23 2005-02-23 Minneinnretning og fremgangsmater for a drive denne

Publications (2)

Publication Number Publication Date
NO20050967D0 NO20050967D0 (no) 2005-02-23
NO20050967L true NO20050967L (no) 2006-08-24

Family

ID=35229536

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20050967A NO20050967L (no) 2005-02-23 2005-02-23 Minneinnretning og fremgangsmater for a drive denne

Country Status (2)

Country Link
NO (1) NO20050967L (no)
WO (1) WO2006091108A1 (no)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103578532B (zh) * 2012-08-01 2016-08-10 旺宏电子股份有限公司 存储装置的操作方法与存储器阵列及其操作方法
US9219225B2 (en) 2013-10-31 2015-12-22 Micron Technology, Inc. Multi-bit ferroelectric memory device and methods of forming the same
DE102015015854B4 (de) * 2015-12-03 2021-01-28 Namlab Ggmbh Integrierte Schaltung mit einer ferroelektrischen Speicherzelle und Verwendung der integrierten Schaltung
KR102599612B1 (ko) * 2019-06-27 2023-11-08 브이메모리 주식회사 전기장을 이용한 전류 경로 제어 방법 및 전자 소자
US12200943B2 (en) 2022-03-11 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device structure and manufacturing method thereof
US12150310B2 (en) 2022-08-16 2024-11-19 International Business Machines Corporation Ferroelectric random-access memory cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122661A (ja) * 1993-10-27 1995-05-12 Olympus Optical Co Ltd 強誘電体メモリ装置
US6091621A (en) * 1997-12-05 2000-07-18 Motorola, Inc. Non-volatile multistate memory cell using a ferroelectric gate fet

Also Published As

Publication number Publication date
NO20050967D0 (no) 2005-02-23
WO2006091108A1 (en) 2006-08-31

Similar Documents

Publication Publication Date Title
DE602006005858D1 (de) Nähvorrichtung
DE602004017934D1 (de) Gerät zum Einfügen chirurgischer Befestigungselemente
EP1943080A4 (en) METHOD AND APPARATUS FOR BLOW MOLDING WITH STRETCHING
EP1736763A4 (en) ANALISEUR
DE602004010239D1 (de) Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
DE602007000219D1 (de) Nichtflüchtige Speichervorrichtung und Betriebsverfahren dafür
ATE384198T1 (de) Lagerungsvorrichtung
EP1848377A4 (en) APPARATUS AND METHOD FOR ARTHROPLASTY OF THE SHOULDER
EP1760716A4 (en) TRAINING DEVICE
DE602005016854D1 (de) Speichervorrichtung
EP1760714A4 (en) CONTROL DEVICE
ITMI20041957A1 (it) Dispositivo di memoria
NO20053296L (no) Anordning og fremgangsmate for rengjoring av kompressor
DE602006002948D1 (de) Kraftantriebsvorrichtung
DE602006013373D1 (de) Steuerungsvorrichtung für eine Brennkraftmashcine
DE602006021402D1 (de) Datenwiedergabevorrichtung
DE602004010795D1 (de) Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
DE602006017422D1 (de) Tragbare hilfsspeichereinrichtung
DK1776171T3 (da) Forbedret kompressoranordning
NO322006B2 (no) Anordning og fremgangsmåte for brønnintervenering
NO20051931D0 (no) Anordning og fremgangsmate for tilstandskontroll.
ITBO20050564A1 (it) Dispositivo compatto a cerniera per un portello
NO20050967L (no) Minneinnretning og fremgangsmater for a drive denne
DE502005000316D1 (de) Antriebsvorrichtung
EP1796840A4 (en) MILLING DEVICE