NO20014004L - Magnetisk direktelager med et effektivt mottiltak mot stöy - Google Patents
Magnetisk direktelager med et effektivt mottiltak mot stöyInfo
- Publication number
- NO20014004L NO20014004L NO20014004A NO20014004A NO20014004L NO 20014004 L NO20014004 L NO 20014004L NO 20014004 A NO20014004 A NO 20014004A NO 20014004 A NO20014004 A NO 20014004A NO 20014004 L NO20014004 L NO 20014004L
- Authority
- NO
- Norway
- Prior art keywords
- countermeasure against
- against noise
- direct bearing
- effective countermeasure
- magnetic direct
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
-
- H10W42/20—
-
- H10W42/287—
-
- H10W76/40—
-
- H10W72/075—
-
- H10W72/551—
-
- H10W72/951—
-
- H10W74/00—
-
- H10W90/736—
-
- H10W90/756—
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000249452A JP2002064189A (ja) | 2000-08-21 | 2000-08-21 | マグネティック・ランダム・アクセス・メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20014004D0 NO20014004D0 (no) | 2001-08-16 |
| NO20014004L true NO20014004L (no) | 2003-02-24 |
Family
ID=18739188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20014004A NO20014004L (no) | 2000-08-21 | 2001-08-16 | Magnetisk direktelager med et effektivt mottiltak mot stöy |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6657246B2 (no) |
| EP (1) | EP1182665B1 (no) |
| JP (1) | JP2002064189A (no) |
| KR (1) | KR20020015293A (no) |
| CN (1) | CN1339800A (no) |
| DE (1) | DE60101074T2 (no) |
| NO (1) | NO20014004L (no) |
| SG (1) | SG100748A1 (no) |
| TW (1) | TW495969B (no) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6903396B2 (en) * | 2002-04-12 | 2005-06-07 | Micron Technology, Inc. | Control of MTJ tunnel area |
| US6936763B2 (en) * | 2002-06-28 | 2005-08-30 | Freescale Semiconductor, Inc. | Magnetic shielding for electronic circuits which include magnetic materials |
| US6950577B2 (en) * | 2002-07-01 | 2005-09-27 | Intel Corporation | Waveguide-based Bragg gratings with spectral sidelobe suppression and method thereof |
| JP4424298B2 (ja) * | 2005-10-26 | 2010-03-03 | Tdk株式会社 | 電子部品 |
| US20090102015A1 (en) * | 2007-10-17 | 2009-04-23 | Ulrich Klostermann | Integrated Circuit, Memory Cell Array, Memory Cell, Memory Module, Method of Operating an Integrated Circuit, and Method of Manufacturing an Integrated Circuit |
| DE102007049786A1 (de) * | 2007-10-17 | 2009-04-23 | Qimonda Ag | Integrierte Schaltung, Speicherzellenarray, Speicherzelle, Verfahren zum Betreiben einer integrierten Schaltung, sowie Verfahren zum Herstellen einer integrierten Schaltung |
| KR102354370B1 (ko) | 2015-04-29 | 2022-01-21 | 삼성전자주식회사 | 쉴딩 구조물을 포함하는 자기 저항 칩 패키지 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI117224B (fi) | 1994-01-20 | 2006-07-31 | Nec Tokin Corp | Sähkömagneettinen häiriönpoistokappale, ja sitä soveltavat elektroninen laite ja hybridimikropiirielementti |
| WO1995031826A1 (en) * | 1994-05-17 | 1995-11-23 | Olin Corporation | Electronic packages with improved electrical performance |
| JPH0935927A (ja) | 1995-07-20 | 1997-02-07 | Tokin Corp | 複合磁性体及びそれを用いた電磁干渉抑制体 |
| US5741435A (en) * | 1995-08-08 | 1998-04-21 | Nano Systems, Inc. | Magnetic memory having shape anisotropic magnetic elements |
| US6001272A (en) * | 1996-03-18 | 1999-12-14 | Seiko Epson Corporation | Method for producing rare earth bond magnet, composition for rare earth bond magnet, and rare earth bond magnet |
| JPH10163400A (ja) * | 1996-11-28 | 1998-06-19 | Nitto Denko Corp | 半導体装置及びそれに用いる2層リードフレーム |
| US5902690A (en) | 1997-02-25 | 1999-05-11 | Motorola, Inc. | Stray magnetic shielding for a non-volatile MRAM |
| JPH10307902A (ja) | 1997-05-01 | 1998-11-17 | Tokin Corp | Icカードのための保護具及び保護方法 |
| JP2001291989A (ja) * | 2000-04-04 | 2001-10-19 | Tokin Corp | 金属筐体を備えた電子部品 |
| US6653573B2 (en) * | 2000-04-04 | 2003-11-25 | Nec Tokin Corporation | Wiring board comprising granular magnetic film |
-
2000
- 2000-08-21 JP JP2000249452A patent/JP2002064189A/ja active Pending
-
2001
- 2001-08-10 US US09/927,974 patent/US6657246B2/en not_active Expired - Fee Related
- 2001-08-16 NO NO20014004A patent/NO20014004L/no unknown
- 2001-08-16 TW TW090120078A patent/TW495969B/zh not_active IP Right Cessation
- 2001-08-17 EP EP01119925A patent/EP1182665B1/en not_active Expired - Lifetime
- 2001-08-17 DE DE60101074T patent/DE60101074T2/de not_active Expired - Fee Related
- 2001-08-18 SG SG200105075A patent/SG100748A1/en unknown
- 2001-08-21 CN CN01125743A patent/CN1339800A/zh active Pending
- 2001-08-21 KR KR1020010050200A patent/KR20020015293A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002064189A (ja) | 2002-02-28 |
| TW495969B (en) | 2002-07-21 |
| US6657246B2 (en) | 2003-12-02 |
| DE60101074D1 (de) | 2003-12-04 |
| EP1182665A3 (en) | 2002-03-06 |
| EP1182665A2 (en) | 2002-02-27 |
| DE60101074T2 (de) | 2004-07-15 |
| NO20014004D0 (no) | 2001-08-16 |
| CN1339800A (zh) | 2002-03-13 |
| US20020020865A1 (en) | 2002-02-21 |
| SG100748A1 (en) | 2003-12-26 |
| EP1182665B1 (en) | 2003-10-29 |
| KR20020015293A (ko) | 2002-02-27 |
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