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NO20014004L - Magnetisk direktelager med et effektivt mottiltak mot stöy - Google Patents

Magnetisk direktelager med et effektivt mottiltak mot stöy

Info

Publication number
NO20014004L
NO20014004L NO20014004A NO20014004A NO20014004L NO 20014004 L NO20014004 L NO 20014004L NO 20014004 A NO20014004 A NO 20014004A NO 20014004 A NO20014004 A NO 20014004A NO 20014004 L NO20014004 L NO 20014004L
Authority
NO
Norway
Prior art keywords
countermeasure against
against noise
direct bearing
effective countermeasure
magnetic direct
Prior art date
Application number
NO20014004A
Other languages
English (en)
Other versions
NO20014004D0 (no
Inventor
Hiroshi Ono
Shigeyoshi Yoshida
Toshiaki Masumoto
Original Assignee
Nec Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Tokin Corp filed Critical Nec Tokin Corp
Publication of NO20014004D0 publication Critical patent/NO20014004D0/no
Publication of NO20014004L publication Critical patent/NO20014004L/no

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3227Exchange coupling via one or more magnetisable ultrathin or granular films
    • H10W42/20
    • H10W42/287
    • H10W76/40
    • H10W72/075
    • H10W72/551
    • H10W72/951
    • H10W74/00
    • H10W90/736
    • H10W90/756

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
NO20014004A 2000-08-21 2001-08-16 Magnetisk direktelager med et effektivt mottiltak mot stöy NO20014004L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000249452A JP2002064189A (ja) 2000-08-21 2000-08-21 マグネティック・ランダム・アクセス・メモリ

Publications (2)

Publication Number Publication Date
NO20014004D0 NO20014004D0 (no) 2001-08-16
NO20014004L true NO20014004L (no) 2003-02-24

Family

ID=18739188

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20014004A NO20014004L (no) 2000-08-21 2001-08-16 Magnetisk direktelager med et effektivt mottiltak mot stöy

Country Status (9)

Country Link
US (1) US6657246B2 (no)
EP (1) EP1182665B1 (no)
JP (1) JP2002064189A (no)
KR (1) KR20020015293A (no)
CN (1) CN1339800A (no)
DE (1) DE60101074T2 (no)
NO (1) NO20014004L (no)
SG (1) SG100748A1 (no)
TW (1) TW495969B (no)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903396B2 (en) * 2002-04-12 2005-06-07 Micron Technology, Inc. Control of MTJ tunnel area
US6936763B2 (en) * 2002-06-28 2005-08-30 Freescale Semiconductor, Inc. Magnetic shielding for electronic circuits which include magnetic materials
US6950577B2 (en) * 2002-07-01 2005-09-27 Intel Corporation Waveguide-based Bragg gratings with spectral sidelobe suppression and method thereof
JP4424298B2 (ja) * 2005-10-26 2010-03-03 Tdk株式会社 電子部品
US20090102015A1 (en) * 2007-10-17 2009-04-23 Ulrich Klostermann Integrated Circuit, Memory Cell Array, Memory Cell, Memory Module, Method of Operating an Integrated Circuit, and Method of Manufacturing an Integrated Circuit
DE102007049786A1 (de) * 2007-10-17 2009-04-23 Qimonda Ag Integrierte Schaltung, Speicherzellenarray, Speicherzelle, Verfahren zum Betreiben einer integrierten Schaltung, sowie Verfahren zum Herstellen einer integrierten Schaltung
KR102354370B1 (ko) 2015-04-29 2022-01-21 삼성전자주식회사 쉴딩 구조물을 포함하는 자기 저항 칩 패키지

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI117224B (fi) 1994-01-20 2006-07-31 Nec Tokin Corp Sähkömagneettinen häiriönpoistokappale, ja sitä soveltavat elektroninen laite ja hybridimikropiirielementti
WO1995031826A1 (en) * 1994-05-17 1995-11-23 Olin Corporation Electronic packages with improved electrical performance
JPH0935927A (ja) 1995-07-20 1997-02-07 Tokin Corp 複合磁性体及びそれを用いた電磁干渉抑制体
US5741435A (en) * 1995-08-08 1998-04-21 Nano Systems, Inc. Magnetic memory having shape anisotropic magnetic elements
US6001272A (en) * 1996-03-18 1999-12-14 Seiko Epson Corporation Method for producing rare earth bond magnet, composition for rare earth bond magnet, and rare earth bond magnet
JPH10163400A (ja) * 1996-11-28 1998-06-19 Nitto Denko Corp 半導体装置及びそれに用いる2層リードフレーム
US5902690A (en) 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
JPH10307902A (ja) 1997-05-01 1998-11-17 Tokin Corp Icカードのための保護具及び保護方法
JP2001291989A (ja) * 2000-04-04 2001-10-19 Tokin Corp 金属筐体を備えた電子部品
US6653573B2 (en) * 2000-04-04 2003-11-25 Nec Tokin Corporation Wiring board comprising granular magnetic film

Also Published As

Publication number Publication date
JP2002064189A (ja) 2002-02-28
TW495969B (en) 2002-07-21
US6657246B2 (en) 2003-12-02
DE60101074D1 (de) 2003-12-04
EP1182665A3 (en) 2002-03-06
EP1182665A2 (en) 2002-02-27
DE60101074T2 (de) 2004-07-15
NO20014004D0 (no) 2001-08-16
CN1339800A (zh) 2002-03-13
US20020020865A1 (en) 2002-02-21
SG100748A1 (en) 2003-12-26
EP1182665B1 (en) 2003-10-29
KR20020015293A (ko) 2002-02-27

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