|
US2930949A
(en)
*
|
1956-09-25 |
1960-03-29 |
Philco Corp |
Semiconductive device and method of fabrication thereof
|
|
US2930950A
(en)
*
|
1956-12-10 |
1960-03-29 |
Teszner Stanislas |
High power field-effect transistor
|
|
US2985550A
(en)
*
|
1957-01-04 |
1961-05-23 |
Texas Instruments Inc |
Production of high temperature alloyed semiconductors
|
|
US3211970A
(en)
*
|
1957-05-06 |
1965-10-12 |
Rca Corp |
Semiconductor devices
|
|
NL104185C
(de)
*
|
1957-08-16 |
|
|
|
|
GB849477A
(en)
*
|
1957-09-23 |
1960-09-28 |
Nat Res Dev |
Improvements in or relating to semiconductor control devices
|
|
US3111611A
(en)
*
|
1957-09-24 |
1963-11-19 |
Ibm |
Graded energy gap semiconductor devices
|
|
US2985805A
(en)
*
|
1958-03-05 |
1961-05-23 |
Rca Corp |
Semiconductor devices
|
|
US2937323A
(en)
*
|
1958-05-29 |
1960-05-17 |
Westinghouse Electric Corp |
Fused junctions in silicon carbide
|
|
NL230857A
(de)
*
|
1958-08-26 |
|
|
|
|
FR1210880A
(fr)
*
|
1958-08-29 |
1960-03-11 |
|
Perfectionnements aux transistors à effet de champ
|
|
GB945742A
(de)
*
|
1959-02-06 |
|
Texas Instruments Inc |
|
|
GB936181A
(en)
*
|
1959-05-19 |
1963-09-04 |
Nat Res Dev |
Improvements in and relating to solid-state electrical devices
|
|
DE1102250B
(de)
*
|
1959-11-13 |
1961-03-16 |
Licentia Gmbh |
Verfahren zur Kontaktierung von Halbleiterbauelementen, insbesondere Thermoelementen
|
|
NL260481A
(de)
*
|
1960-02-08 |
|
|
|
|
US3176204A
(en)
*
|
1960-12-22 |
1965-03-30 |
Raytheon Co |
Device composed of different semiconductive materials
|
|
US3200490A
(en)
*
|
1962-12-07 |
1965-08-17 |
Philco Corp |
Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
|
|
NL302497A
(de)
*
|
1962-12-31 |
|
|
|
|
US3381183A
(en)
*
|
1965-06-21 |
1968-04-30 |
Rca Corp |
High power multi-emitter transistor
|
|
DE1514562B2
(de)
*
|
1965-09-07 |
1972-12-07 |
Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg |
Anordnung zur herstellung eines halbleiter-bauelementes
|
|
US3458777A
(en)
*
|
1966-09-21 |
1969-07-29 |
Hughes Aircraft Co |
Pin diode with a non-uniform intrinsic region width
|
|
US3448354A
(en)
*
|
1967-01-20 |
1969-06-03 |
Rca Corp |
Semiconductor device having increased resistance to second breakdown
|
|
DE1539332B2
(de)
*
|
1967-03-21 |
1971-02-04 |
Siemens AG, 1000 Berlin u 8000 München |
Kontaktstück zur Kontaktierung von Thermoelementschenkeln in Thermogenerato ren
|