NL8300715A - Ternaire iii-v polychromatische zonnecellen met drie aansluitingen en werkwijze voor de vervaardiging van zulke cellen. - Google Patents
Ternaire iii-v polychromatische zonnecellen met drie aansluitingen en werkwijze voor de vervaardiging van zulke cellen. Download PDFInfo
- Publication number
- NL8300715A NL8300715A NL8300715A NL8300715A NL8300715A NL 8300715 A NL8300715 A NL 8300715A NL 8300715 A NL8300715 A NL 8300715A NL 8300715 A NL8300715 A NL 8300715A NL 8300715 A NL8300715 A NL 8300715A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- gaas
- transition
- containing compound
- solar cell
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 92
- 230000007704 transition Effects 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 55
- 150000001875 compounds Chemical class 0.000 claims description 41
- 239000002019 doping agent Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052785 arsenic Inorganic materials 0.000 claims description 21
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 19
- 229910052787 antimony Inorganic materials 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000003607 modifier Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000009388 chemical precipitation Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 5
- 239000011574 phosphorus Substances 0.000 claims 5
- 229940125898 compound 5 Drugs 0.000 claims 1
- 238000003892 spreading Methods 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 61
- 239000000463 material Substances 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- 150000002736 metal compounds Chemical class 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000011701 zinc Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 241000233805 Phoenix Species 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 diethyl alcohol Chemical compound 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 2
- 229910000058 selane Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 101100537779 Homo sapiens TPM2 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241000321453 Paranthias colonus Species 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 102100036471 Tropomyosin beta chain Human genes 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000002266 amputation Methods 0.000 description 1
- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/066—Gp III-V liquid phase epitaxy
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35268082 | 1982-02-26 | ||
| US06/352,680 US4404421A (en) | 1982-02-26 | 1982-02-26 | Ternary III-V multicolor solar cells and process of fabrication |
| US42493782 | 1982-09-27 | ||
| US06/424,937 US4451691A (en) | 1982-02-26 | 1982-09-27 | Three-terminal ternary III-V multicolor solar cells and process of fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8300715A true NL8300715A (nl) | 1983-09-16 |
Family
ID=26997617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8300715A NL8300715A (nl) | 1982-02-26 | 1983-02-25 | Ternaire iii-v polychromatische zonnecellen met drie aansluitingen en werkwijze voor de vervaardiging van zulke cellen. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4451691A (es) |
| AU (1) | AU559708B2 (es) |
| CA (1) | CA1207422A (es) |
| DE (1) | DE3306725A1 (es) |
| ES (2) | ES8406797A1 (es) |
| FR (1) | FR2522444B1 (es) |
| GB (1) | GB2116365B (es) |
| IL (1) | IL67982A (es) |
| IN (1) | IN158004B (es) |
| NL (1) | NL8300715A (es) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4575577A (en) * | 1983-05-27 | 1986-03-11 | Chevron Research Company | Ternary III-V multicolor solar cells containing a quaternary window layer and a quaternary transition layer |
| US4633030A (en) * | 1985-08-05 | 1986-12-30 | Holobeam, Inc. | Photovoltaic cells on lattice-mismatched crystal substrates |
| US4667059A (en) * | 1985-10-22 | 1987-05-19 | The United States Of America As Represented By The United States Department Of Energy | Current and lattice matched tandem solar cell |
| US4631352A (en) * | 1985-12-17 | 1986-12-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells |
| JPS6436086A (en) * | 1987-07-31 | 1989-02-07 | Canon Kk | Functional deposition film |
| JP2717583B2 (ja) * | 1988-11-04 | 1998-02-18 | キヤノン株式会社 | 積層型光起電力素子 |
| US5185272A (en) * | 1990-04-16 | 1993-02-09 | Fujitsu Limited | Method of producing semiconductor device having light receiving element with capacitance |
| US5391896A (en) * | 1992-09-02 | 1995-02-21 | Midwest Research Institute | Monolithic multi-color light emission/detection device |
| US5679963A (en) * | 1995-12-05 | 1997-10-21 | Sandia Corporation | Semiconductor tunnel junction with enhancement layer |
| US6214678B1 (en) * | 1997-05-21 | 2001-04-10 | Hughes Electronics Corp | Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy |
| EP2317567A1 (en) * | 1998-08-19 | 2011-05-04 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device |
| US6451415B1 (en) * | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
| US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
| US7295586B2 (en) * | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
| DE10345410A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Strahlungsdetektor |
| JP4333426B2 (ja) * | 2004-03-19 | 2009-09-16 | ソニー株式会社 | 化合物半導体の製造方法、及び半導体装置の製造方法 |
| JP5447756B2 (ja) * | 2004-03-31 | 2014-03-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射検出器 |
| CN1938864B (zh) * | 2004-03-31 | 2011-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | 辐射探测器 |
| US8772628B2 (en) | 2004-12-30 | 2014-07-08 | Alliance For Sustainable Energy, Llc | High performance, high bandgap, lattice-mismatched, GaInP solar cells |
| US20060180198A1 (en) * | 2005-02-16 | 2006-08-17 | Sharp Kabushiki Kaisha | Solar cell, solar cell string and method of manufacturing solar cell string |
| TWI285436B (en) * | 2005-12-30 | 2007-08-11 | Ind Tech Res Inst | Solar cell with superlattice structure and fabricating method thereof |
| JP4290747B2 (ja) * | 2006-06-23 | 2009-07-08 | シャープ株式会社 | 光電変換素子およびインターコネクタ付き光電変換素子 |
| US7652252B1 (en) * | 2007-10-08 | 2010-01-26 | Hrl Laboratories, Llc | Electronically tunable and reconfigurable hyperspectral photon detector |
| US20100089440A1 (en) * | 2008-10-09 | 2010-04-15 | Emcore Corporation | Dual Junction InGaP/GaAs Solar Cell |
| NO20093193A1 (no) * | 2009-10-22 | 2011-04-26 | Integrated Solar As | Fremgangsmate for fremstilling av fotoelektriske solceller og en multifunksjonell solcelle |
| US9590131B2 (en) | 2013-03-27 | 2017-03-07 | Alliance For Sustainable Energy, Llc | Systems and methods for advanced ultra-high-performance InP solar cells |
| FR3044827B1 (fr) * | 2015-12-04 | 2018-03-16 | Centre National De La Recherche Scientifique - Cnrs - | Cellule photovoltaique |
| US10370766B2 (en) * | 2016-10-27 | 2019-08-06 | The Regents Of The University Of California | Hybrid photo-electrochemical and photo-voltaic cells |
| US11508864B2 (en) * | 2019-08-16 | 2022-11-22 | Alliance For Sustainable Energy, Llc | Tandem module unit |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017332A (en) * | 1975-02-27 | 1977-04-12 | Varian Associates | Solar cells employing stacked opposite conductivity layers |
| US4094704A (en) * | 1977-05-11 | 1978-06-13 | Milnes Arthur G | Dual electrically insulated solar cells |
| US4128733A (en) * | 1977-12-27 | 1978-12-05 | Hughes Aircraft Company | Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same |
| US4179702A (en) * | 1978-03-09 | 1979-12-18 | Research Triangle Institute | Cascade solar cells |
| US4255211A (en) * | 1979-12-31 | 1981-03-10 | Chevron Research Company | Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface |
| US4278474A (en) * | 1980-03-25 | 1981-07-14 | The United States Of America As Represented By The United States Department Of Energy | Device for conversion of electromagnetic radiation into electrical current |
| IT8122768A0 (it) * | 1980-07-11 | 1981-07-06 | Fiz Tekh Inst Ioffe | Fotoelemento solare. |
| US4387265A (en) * | 1981-07-17 | 1983-06-07 | University Of Delaware | Tandem junction amorphous semiconductor photovoltaic cell |
-
1982
- 1982-09-27 US US06/424,937 patent/US4451691A/en not_active Expired - Fee Related
-
1983
- 1983-02-21 AU AU11698/83A patent/AU559708B2/en not_active Ceased
- 1983-02-23 IL IL67982A patent/IL67982A/xx unknown
- 1983-02-25 IN IN234/CAL/83A patent/IN158004B/en unknown
- 1983-02-25 FR FR8303168A patent/FR2522444B1/fr not_active Expired
- 1983-02-25 CA CA000422400A patent/CA1207422A/en not_active Expired
- 1983-02-25 DE DE19833306725 patent/DE3306725A1/de not_active Withdrawn
- 1983-02-25 ES ES520127A patent/ES8406797A1/es not_active Expired
- 1983-02-25 NL NL8300715A patent/NL8300715A/nl not_active Application Discontinuation
- 1983-02-25 GB GB08305243A patent/GB2116365B/en not_active Expired
-
1984
- 1984-04-16 ES ES531658A patent/ES531658A0/es active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2116365A (en) | 1983-09-21 |
| GB8305243D0 (en) | 1983-03-30 |
| CA1207422A (en) | 1986-07-08 |
| ES520127A0 (es) | 1984-08-01 |
| FR2522444B1 (fr) | 1986-12-26 |
| ES8503891A1 (es) | 1985-03-01 |
| ES8406797A1 (es) | 1984-08-01 |
| US4451691A (en) | 1984-05-29 |
| GB2116365B (en) | 1986-01-29 |
| ES531658A0 (es) | 1985-03-01 |
| FR2522444A1 (fr) | 1983-09-02 |
| DE3306725A1 (de) | 1983-09-22 |
| IN158004B (es) | 1986-08-16 |
| IL67982A (en) | 1986-08-31 |
| AU559708B2 (en) | 1987-03-19 |
| AU1169883A (en) | 1983-09-01 |
| IL67982A0 (en) | 1983-06-15 |
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