NL2035749A - Perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with exchange bias field capable of being continuously regulated and controlled - Google Patents
Perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with exchange bias field capable of being continuously regulated and controlled Download PDFInfo
- Publication number
- NL2035749A NL2035749A NL2035749A NL2035749A NL2035749A NL 2035749 A NL2035749 A NL 2035749A NL 2035749 A NL2035749 A NL 2035749A NL 2035749 A NL2035749 A NL 2035749A NL 2035749 A NL2035749 A NL 2035749A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- exchange bias
- bias field
- synthetic antiferromagnetic
- magnetic
- Prior art date
Links
- 230000005290 antiferromagnetic effect Effects 0.000 title claims abstract description 32
- 230000008878 coupling Effects 0.000 title claims abstract description 27
- 238000010168 coupling process Methods 0.000 title claims abstract description 27
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 27
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 22
- 230000005291 magnetic effect Effects 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 31
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000033228 biological regulation Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000005294 ferromagnetic effect Effects 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 75
- 238000005516 engineering process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 239000002885 antiferromagnetic material Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/002—Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Magnetic Heads (AREA)
Abstract
Disclosed is a perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and 5 controlled, which includes a substrate, a buffer layer, a seed layer, an artificially synthetic antiferromagnetic layer, and a covering layer from bottom to top. The artificially synthetic antiferromagnetic layer is formed by sandwiching a non-magnetic isolating layer between two composite magnetic layers with perpendicular magnetic anisotropy. The antiferromagnetic coupling strength between two ferromagnetic layers lO may be changed by regulating the isolation thickness of a middle layer and parameters of the magnetic layers, thereby realizing continuous regulation and control of a p-SV exchange bias field. The present invention relates to the technical field of magnetic thin film materials, and solves the problem that the p-SV exchange bias field is difficult to continuously regulate and control in the prior art. 15
Description
PERPENDICULAR ANISOTROPY ARTIFICIALLY SYNTHETIC
ANTIFERROMAGNETIC COUPLING MULTILAYER FILM WITH
EXCHANGE BIAS FIELD CAPABLE OF BEING CONTINUOUSLY
REGULATED AND CONTROLLED
[01] The present invention relates to the technical field of magnetic thin film materials, and more particularly, to a perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled.
[02] A sensor technology is a high technology which has rapidly developed, and also an important symbol of the development of modern science and technology. The sensor technology forms the information industry of modern society together with a communication technology and a computer technology. A magnetic sensor is one of a variety of sensors. The magnetic sensor is capable of sensing the change of a physical quantity related to a magnetic phenomenon, and converting the physical quantity into an electrical signal for detection, so as to directly or indirectly detect magnetic field size, direction, displacement, angle, current, and other physical information. The magnetic sensor is widely used in information, motors, power electronics, energy management, automotive, magnetic information reading and writing, industrial automation and biomedicine, and other fields. The magnetic sensor is an important element for establishing a technology platform of Internet of things. The development of the magnetic sensor is facing great opportunities. With the development of science and technology and information technology, people have put forward higher and higher requirements for the size, sensitivity, thermal stability, and power consumption of the magnetic sensor.
[03] At present, the widely used magnetic sensor is mainly based on the electromagnetic induction principle, the Hall effect, and the magnetoresistance effect.
The sensor based on the magnetoresistance effect is replacing traditional magnetic sensors due to its high sensitivity, small size, low power consumption, and easy integration. Compared with other types of magnetic sensors, a spin valve sensor chip based on a giant magnetoresistance (GMR) effect has the characteristics of miniaturization, low cost, low power consumption, high integration, high response frequency, and high sensitivity, and will become the competitive highpoint in the future. Spin valves may be divided into in-plane magnetic anisotropy (i-SV) and perpendicular magnetic anisotropy (p-SV) according to magnetic crystal anisotropy or the easy and difficult axis directions of magnetic thin films. When the size of a device is smaller than 1 m, an edge of an in-plane magnetized film in i-SV is easy to form magnetic eddy current, which greatly reduces the signal-to-noise ratio of the device and even leads to information loss. Therefore, in order to ensure the stable operation of the sensor, the in-plane magnetized film must have a large aspect ratio k>2, but an
MTJ device with a large aspect ratio is very unfavorable to the miniaturization trend of the sensor. While operating, the p-SV does not depend on device shape, compromises between a high signal-to-noise ratio and miniaturization requirements, and has the following advantages. (1) A smaller recording unit may be formed, thereby greatly reducing the size of the sensor, and satisfying the miniaturization trend. (2) The stability to thermal disturbances is better. (3) The area and shape restrictions caused by the vortex rotation in a magnetic layer can be effectively eliminated. (4) The power consumption of the sensor can be reduced. At present, the p-SV typically employs a single layer of antiferromagnetic material as a pinned layer. However, an exchange bias of such antiferromagnetic materials is difficult to regulate and control, which greatly limits the future applications of the spin valves.
[04] In order to solve the above-mentioned technical problem, an object of the present invention is to provide a perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled, to solve the problem that a p-SV exchange bias field is difficult to continuously regulate and control in the prior art.
[05] The technical solution of the present invention for solving the above- mentioned technical problem is as follows. A perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled is provided, sequentially including a substrate, a buffer layer, a seed layer, an artificially synthetic antiferromagnetic layer, and a covering layer from bottom to top. The artificially synthetic antiferromagnetic layer is formed by sandwiching a non-magnetic isolating layer between two composite magnetic layers with perpendicular magnetic anisotropy.
The artificially synthetic antiferromagnetic layer has a structure of [Co/Ni|ni/isolating layer/[Ni/Co]nz2. In the composite magnetic layer below the isolating layer, the Ni layer is over the Co layer, and the number of periods N2 of [Ni/Co] is 1-6. In the composite magnetic layer above the isolating layer, the Ni layer is under the Co layer, and the number of periods N1 of [Co/Ni] is 1-6.
[06] The present invention has the following beneficial effects. A perpendicular anisotropy artificially synthetic antiferromagnetic structure is formed by sandwiching a non-magnetic metal layer between two magnetic layers partially perpendicular. In a perpendicular magnetic tunnel junction, a pinning relationship between the traditional single-layer antiferromagnetic material and ferromagnetic material may be replaced and directly used as a reference layer in p-SV. Since the magnetic moments of the two magnetic layers of the perpendicular anisotropy artificially synthetic antiferromagnetic structure are opposite and cancel each other, the net magnetic moment is very small or even close to zero. Therefore, so as long as the interlayer coupling is not overcome, the magnetic moment is difficult to flip under the influence of an external magnetic field, and the p-SV may achieve a very large flip field difference. The influence of a stray magnetic field on a free layer may also be ignored, thus avoiding the problem that a loop of the free layer deviates from an origin due to the magnetostatic coupling in a spin valve with a single reference layer. By regulating the isolation thickness of the middle layer and parameters of the magnetic layers, the antiferromagnetic coupling strength between the two ferromagnetic layers may be changed, thus achieving continuous regulation and control of a p-SV exchange bias field.
[07] Based on the above-mentioned technical solution, the present invention may be further improved as follows.
[08] Further, the number of periods N2 of [Ni/Co] is 1-3, and the number of periods N1 of [Co/Ni] is 1-3.
[09] Further, in the artificially synthetic antiferromagnetic layer, the Co layer has a thickness of 0.25-0.35 nm, and the Ni layer has a thickness of 0.35-1.25 nm.
[10] Further, the Ni layer has a thickness of 0.35-0.5 nm.
[11] Further, the isolating layer is made of metal Ir and has a thickness of 0.75- 10.5 nm.
[12] Further, the isolating layer is made of metal Pt, W, Hf, Ta, Ru, Rh, or Pd and has a thickness of 0.75-10.5 nm.
[13] Further, the isolating layer has a thickness of 1-2 nm.
[14] Further, the substrate is a silicon substrate or a glass substrate.
[15] Further, the buffer layer is made of metal Ta and has a thickness of 4.5-5.5 nm.
[16] Further, the seed layer is made of metal Pt and has a thickness of 7.5-8.5 nm.
[17] Further, the covering layer is made of metal Ta and has a thickness of 1-2 nm.
[18] The present invention further provides application of the above-mentioned perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled in preparation of magnetic thin film materials.
[19] The present invention has the following beneficial effects.
[20] 1. By changing the thickness of the non-magnetic isolating layer, local spin coupling of itinerant electrons in the vicinity of the magnetic layer can be caused, which generates an oscillation-decaying RKKY exchange effect through the strength of an exchange coupling field, thus achieving the purpose of regulating the exchange bias field.
[21] 2. When Co/Ni periodic repetitions are accumulated, the number of magnetic coupling interfaces will be increased, and the perpendicular anisotropy energy of the interfaces will be superimposed accordingly. As a result, the effective anisotropy constants of the two composite magnetic layers are changed, thereby finally realizing the continuous regulation and control of an exchange coupling field of a sample.
[22] 3. By changing the thickness of the Ni layer, a magnetic neighbor effect between the isolating layer and the Co layer is affected, whereby the 3d-5d spin-orbit coupling therebetween changes, and the exchange coupling field of the sample is affected.
[23] 4. Since the exchange bias field is continuously adjustable within a large magnetic field range, electronic devices such as a magnetic switch sensor and a current sensor applicable to multiple scenarios may be developed based on the exchange bias field. The magnetic switch sensor has the advantages that sensors with different switching field intervals may achieve a switching function according to actual application scenarios, which makes the device less dependent on the environment.
Similarly, when the current sensor detects the current of an electronic circuit in real life, the current sensor applied to small current detection cannot realize a reliable detection function in a large current environment since the magnitudes of magnetic fields generated by different strong and weak current are in different intervals, whereby the device selection needs to match the measured current range completely.
However, the current sensor based on an exchange bias field capable of being continuously regulated and controlled may realize a sectional detectable function, and has strong selectivity in practical application.
[24] FIG. 1 is a schematic structure diagram of a multilayer film according to the present invention,
[25] FIG. 2 is a graph of an exchange bias field of a multilayer film in Example 1 and Examples 4-16;
[26] FIG. 3 is a graph of an exchange bias field of a multilayer film in Example 1 and Examples 17-19;
[27] FIG. 4 is a graph of an exchange bias field of a multilayer film in Example 1 and Examples 20-24; and
[28] FIG. 5 is a graph of an exchange bias field of a multilayer film in Example 1 and Examples 25-28.
[29] The principles and features of the present invention are described below with reference to the accompanying drawings. The examples are intended to illustrate the present invention and not to limit the scope of the present invention. Where specific conditions are not specified in the examples, the examples are carried out according to conventional conditions or conditions suggested by manufacturers. The reagents or instruments used are not specified by the manufacturers and are conventional products commercially available.
[30] Example 1:
[31] A perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled sequentially includes a Si/SiO; substrate, a Snm Ta buffer layer, an 8nm
Pt seed layer, a 0.3nm Co layer, a 0.5nm Ni layer (the number of periods N2 of [Ni/Co]is 3), a 1.5nm Ir isolating layer, a 0.5nm Ni layer, a 0.3nm Co layer (the number of periods N1 of [Co/Ni] is 3), and a 1.5nm Ta covering layer from bottom to top. (see FIG. 1 for structure)
[32] Example 2:
[33] A perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled sequentially includes a Si/SiO; substrate, a 4.5nm Ta buffer layer, a 7.5nm Pt seed layer, a 0.25nm Co layer, a 0.35nm Ni layer (the number of periods N2 of [Ni/Co] is 1), a Inm Pt isolating layer, a 0.35nm Ni layer, a 0.25nm Co layer (the number of periods N1 of [Co/Ni] is 1), and a Inm Ta covering layer from bottom to top.
[34] Example 3:
[35] A perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled sequentially includes a Si/SiO; substrate, a 5.5nm Ta buffer layer, an 8.5nm Pt seed layer, a 0.35nm Co layer, a 1.25nm Ni layer (the number of periods N2 of [Ni/Co] is 6), a 2nm Rh isolating layer, a 1.25nm Ni layer, a 0.35nm Co layer (the number of periods N1 of [Co/Ni] is 6), and a 2nm Ta covering layer from bottom to top.
[36] Examples 4-16:
[37] In a perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled, an Ir isolating layer has a thickness of 0.75 nm, 2 nm, 3 nm, 4 nm, 4.5 nm, 5 nm, 6 nm, 6.5 nm, 7.5 nm, 8.5 nm, 9 nm, 10 nm, and 10.5 nm, and the rest are the same as those in Example 1.
[38] Examples 17-19:
[39] In a perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled, the number of periods N2 is equal to the number of N1, which is 2, 4, and 5, and the rest are the same as those in Example 1.
[40] Examples 20-24:
[41] In a perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled, the number of periods N1 is equal to 3, the number of periods
N2is 1, 2, 4, 5, and 6, and the rest are the same as those in Example 1.
[42] Examples 25-28:
[43] In a perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with an exchange bias field capable of being continuously regulated and controlled, a Ni layer has a thickness of 0.35 nm, 0.75 nm, 1 nm, and 1.25 nm, and the rest are the same as those in Example 1.
[44] Experimental Example
[45] 1. An exchange bias field (Hex) was measured for the multilayer film in
Example 1 and Examples 4-16 using a vibrating sample magnetometer (VSM), and the results are shown in FIG. 2. It can be seen from FIG. 2 that the size of the exchange bias field of the multilayer film varies with the thickness of the isolating layer, and when the thickness of the isolating layer Ir of the multilayer film prepared in Example 1 is 1.5 nm, the exchange bias field may reach 600 Oe.
[46] 2. An exchange bias field (Hex) was measured for the multilayer film in
Example 1 and Examples 17-19 using a vibrating sample magnetometer (VSM), and the results are shown in FIG. 3. It can be seen from FIG. 3 that the size of the exchange bias field of the multilayer film is reduced as the number of periods N2 and the number of periods N1 are increased, and when the number of periods N2 and the number of periods NI of the multilayer film prepared in Example 17 are 2, the exchange bias field may reach 1650 Oe.
[47] 3. An exchange bias field (Hex) was measured for the multilayer film in
Example 1 and Examples 20-24 using a vibrating sample magnetometer (VSM), and the results are shown in FIG. 4. It can be seen from FIG. 4 that the size of the exchange bias field of the multilayer film is reduced as the number of periods N2 is increased, and when the number of periods N2 of the multilayer film prepared in Example 20 is 1, the exchange bias field may reach 2600 Oe.
[48] 4. An exchange bias field (Hex) was measured for the multilayer film in
Example 1 and Examples 25-28 using a vibrating sample magnetometer (VSM), and the results are shown in FIG. 5. It can be seen from FIG. 5 that the size of the exchange bias field of the multilayer film is firstly reduced and then increased as the thickness of the Ni layer is increased, and when the thickness of the Ni layer in Example 25 is 0.35 nm, the exchange bias field may reach 690 Oe.
[49] The above descriptions are merely the preferred examples of the present invention and are not intended to limit the present invention. Any modification, equivalent replacement and improvement within the spirit and principle of the present invention should be contained in the protection scope of the present invention.
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211090517.5A CN115602411B (en) | 2022-09-07 | 2022-09-07 | Perpendicular anisotropic synthetic antiferromagnetic coupling multilayer film with continuously adjustable exchange bias field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2035749A true NL2035749A (en) | 2024-03-14 |
| NL2035749B1 NL2035749B1 (en) | 2024-09-02 |
Family
ID=84842737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2035749A NL2035749B1 (en) | 2022-09-07 | 2023-09-06 | Perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with exchange bias field capable of being continuously regulated and controlled |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115602411B (en) |
| NL (1) | NL2035749B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117062512B (en) * | 2023-08-31 | 2024-08-20 | 甘肃省科学院传感技术研究所 | Structure for improving size and thermal stability of artificial antiferromagnetic coupling field and processing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320616A (en) * | 2008-03-27 | 2008-12-10 | 复旦大学 | A spin valve with perpendicular magnetic anisotropy |
| CN101692374A (en) * | 2009-10-15 | 2010-04-07 | 复旦大学 | Perpendicularly easy-axis orientated artificially synthetic antiferromagnet and pseudo-spin valve film structure |
| WO2016171920A1 (en) * | 2015-04-21 | 2016-10-27 | Spin Transfer Technologies, Inc. | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory |
| CN111490155A (en) * | 2020-04-21 | 2020-08-04 | 浙江驰拓科技有限公司 | Magnetic tunnel junction |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6650513B2 (en) * | 2001-01-29 | 2003-11-18 | International Business Machines Corporation | Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer |
| US8871365B2 (en) * | 2012-02-28 | 2014-10-28 | Headway Technologies, Inc. | High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications |
| CN105122489B (en) * | 2013-11-01 | 2017-10-13 | 中国科学院物理研究所 | A kind of nanoscale magnetic multilayers and its manufacture method for temperature sensor |
| CN106898694A (en) * | 2017-03-02 | 2017-06-27 | 复旦大学 | A kind of composite magnetic multi-layer film structure of controllable vertical exchange coupled field size |
| CN108987031B (en) * | 2018-07-06 | 2019-10-18 | 西安交通大学 | A magnetic tunnel junction device and its magnetic random access memory device |
| CN112305469B (en) * | 2019-07-29 | 2022-04-29 | 甘肃省科学院传感技术研究所 | Giant magnetoresistance sensor with integrated annealing structure |
-
2022
- 2022-09-07 CN CN202211090517.5A patent/CN115602411B/en active Active
-
2023
- 2023-09-06 NL NL2035749A patent/NL2035749B1/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320616A (en) * | 2008-03-27 | 2008-12-10 | 复旦大学 | A spin valve with perpendicular magnetic anisotropy |
| CN101692374A (en) * | 2009-10-15 | 2010-04-07 | 复旦大学 | Perpendicularly easy-axis orientated artificially synthetic antiferromagnet and pseudo-spin valve film structure |
| WO2016171920A1 (en) * | 2015-04-21 | 2016-10-27 | Spin Transfer Technologies, Inc. | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory |
| CN111490155A (en) * | 2020-04-21 | 2020-08-04 | 浙江驰拓科技有限公司 | Magnetic tunnel junction |
Non-Patent Citations (1)
| Title |
|---|
| HE HE ET AL: "[Co/Ni]_{\rm N}-Based Synthetic Antiferromagnet With Perpendicular Anisotropy and Its Application in Pseudo Spin Valves", IEEE TRANSACTIONS ON MAGNETICS, IEEE, USA, vol. 46, no. 6, 1 June 2010 (2010-06-01), pages 1327 - 1330, XP011309996, ISSN: 0018-9464, DOI: 10.1109/TMAG.2010.2043503 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115602411B (en) | 2024-05-10 |
| CN115602411A (en) | 2023-01-13 |
| NL2035749B1 (en) | 2024-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Nishibe et al. | Thin film magnetic field sensor utilizing magneto impedance effect | |
| US7501928B2 (en) | Current sensor | |
| US7504927B2 (en) | Current sensor | |
| US6577124B2 (en) | Magnetic field sensor with perpendicular axis sensitivity, comprising a giant magnetoresistance material or a spin tunnel junction | |
| CN112082579B (en) | Wide range tunnel magnetoresistive sensor and Wheatstone half bridge | |
| US5686838A (en) | Magnetoresistive sensor having at least a layer system and a plurality of measuring contacts disposed thereon, and a method of producing the sensor | |
| US6713195B2 (en) | Magnetic devices using nanocomposite materials | |
| US20040023065A1 (en) | Superparamagnetic devices | |
| US20080211490A1 (en) | Magnetic detector and method for making the same | |
| US7830143B2 (en) | Magnetic sensor, method of manufacturing the same, and electronic device | |
| US4476454A (en) | New magnetoresistive materials | |
| WO2003083499A2 (en) | Spin dependent tunneling devices having reduced topological coupling | |
| US5738938A (en) | Magnetoelectric transducer | |
| NL2035749B1 (en) | Perpendicular anisotropy artificially synthetic antiferromagnetic coupling multilayer film with exchange bias field capable of being continuously regulated and controlled | |
| CN101088019A (en) | Bridge type magnetic sensor with tunable characteristic | |
| Cao et al. | Tuning the pinning direction of giant magnetoresistive sensor by post annealing process | |
| CN103383441B (en) | A kind of digital spin valve magnetic field sensor and technology of preparing thereof | |
| Dimitropoulos et al. | Boosting the performance of miniature fluxgates with novel signal extraction techniques | |
| CN106597102A (en) | Magnetic thin film structure, magnetic sensitive sensor device with magnetic thin film structure, and application method thereof | |
| Smith et al. | Magnetic field sensing utilizing GMR materials | |
| Hill | A comparison of GMR multilayer and spin-valve sensors for vector field sensing | |
| CN106291413B (en) | Spin valve structure and application thereof as giant magnetoresistance stress sensor | |
| CN100442076C (en) | Linear magnetic field sensor and manufacturing method thereof | |
| CN100368820C (en) | Spin valve type digital magnetic field sensor and manufacturing method thereof | |
| Kim et al. | Effects of the shape anisotropy on the giant magnetoresistance properties |