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NL2015073A - Lithography apparatus and method of manufacturing devices. - Google Patents

Lithography apparatus and method of manufacturing devices.

Info

Publication number
NL2015073A
NL2015073A NL2015073A NL2015073A NL2015073A NL 2015073 A NL2015073 A NL 2015073A NL 2015073 A NL2015073 A NL 2015073A NL 2015073 A NL2015073 A NL 2015073A NL 2015073 A NL2015073 A NL 2015073A
Authority
NL
Netherlands
Prior art keywords
reflectors
field
radiation
substrate
individually directable
Prior art date
Application number
NL2015073A
Other languages
English (en)
Inventor
Bieling Stig
Endres Martin
Escalante Marun Maryana
Bernard Plechelmus Van Schoot Jan
Gruner Toralf
Wischmeier Lars
Original Assignee
Asml Netherlands Bv
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv, Zeiss Carl Smt Gmbh filed Critical Asml Netherlands Bv
Publication of NL2015073A publication Critical patent/NL2015073A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Claims (1)

  1. Een lithografieinrichting omvattende: een belichtinginrichting ingericht voor het leveren van een stralingsbundel; een drager geconstrueerd voor het dragen van een patroneerinrichting, welke patroneerinrichting in staat is een patroon aan te brengen in een doorsnede van de stralingsbundel ter vorming van een gepatroneerde stralingsbundel; een substraattafel geconstrueerd om een substraat te dragen; en een projectieinrichting ingericht voor het projecteren van de gepatroneerde stralingsbundel op een doelgebied van het substraat, met het kenmerk, dat de substraattafel is ingericht voor het positioneren van het doelgebied van het substraat in een brandpuntsvlak van de projectieinrichting.
NL2015073A 2014-07-15 2015-07-02 Lithography apparatus and method of manufacturing devices. NL2015073A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP14177025 2014-07-15

Publications (1)

Publication Number Publication Date
NL2015073A true NL2015073A (en) 2016-04-12

Family

ID=51176262

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2015073A NL2015073A (en) 2014-07-15 2015-07-02 Lithography apparatus and method of manufacturing devices.

Country Status (5)

Country Link
JP (1) JP6698063B2 (nl)
KR (1) KR102523508B1 (nl)
CN (1) CN106575085B (nl)
NL (1) NL2015073A (nl)
WO (1) WO2016008754A1 (nl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107885038A (zh) * 2016-09-30 2018-04-06 上海微电子装备（集团）股份有限公司 照明均匀性校正装置、校正方法以及一种曝光投影系统
EP3647872A1 (en) * 2018-11-01 2020-05-06 ASML Netherlands B.V. A method for controlling the dose profile adjustment of a lithographic apparatus
DE102021113780B9 (de) * 2021-05-27 2024-08-01 Carl Zeiss Smt Gmbh Verfahren zur Charakterisierung einer Maske für die Mikrolithographie
KR20250164721A (ko) * 2023-03-22 2025-11-25 에이에스엠엘 네델란즈 비.브이. 리소그래피 공정 인식 퓨필 프로파일을 생성하기 위한 방법 및 시스템
CN121464396A (zh) * 2023-07-12 2026-02-03 Asml荷兰有限公司 光刻设备以及相关方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6753947B2 (en) * 2001-05-10 2004-06-22 Ultratech Stepper, Inc. Lithography system and method for device manufacture
KR100576746B1 (ko) * 2001-06-01 2006-05-03 에이에스엠엘 네델란즈 비.브이. 리소그래피장치, 디바이스제조방법, 그 디바이스,제어시스템, 컴퓨터프로그램, 및 컴퓨터프로그램물
US7123348B2 (en) * 2004-06-08 2006-10-17 Asml Netherlands B.V Lithographic apparatus and method utilizing dose control
CN103293665B (zh) 2008-02-15 2016-07-06 卡尔蔡司Smt有限责任公司 微光刻的投射曝光设备使用的分面镜
JP5650670B2 (ja) * 2009-03-04 2015-01-07 エーエスエムエル ネザーランズ ビー．ブイ． 照明システム、リソグラフィ装置および照明モードを形成する方法
NL2004429A (en) * 2009-08-25 2011-02-28 Asml Netherlands Bv Illumination system, lithographic apparatus and method of adjusting an illumination mode.
DE102009045694B4 (de) * 2009-10-14 2012-03-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
US9052605B2 (en) * 2009-12-23 2015-06-09 Asml Netherlands B.V. Illumination system for lithographic apparatus with control system to effect an adjustment of an imaging parameter
CN102695989A (zh) * 2009-12-29 2012-09-26 Asml荷兰有限公司 照射系统、光刻设备以及照射方法
US9372413B2 (en) * 2011-04-15 2016-06-21 Asml Netherlands B.V. Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices
DE102012204273B4 (de) * 2012-03-19 2015-08-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102012207511A1 (de) * 2012-05-07 2013-05-08 Carl Zeiss Smt Gmbh Facettenspiegel
DE102012213515A1 (de) * 2012-08-01 2014-02-06 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage
JP6466333B2 (ja) * 2012-10-15 2019-02-06 エーエスエムエル ネザーランズ ビー．ブイ． 作動機構、光学装置、リソグラフィ装置及びデバイス製造方法

Also Published As

Publication number Publication date
CN106575085B (zh) 2019-03-15
JP6698063B2 (ja) 2020-05-27
KR102523508B1 (ko) 2023-04-20
WO2016008754A1 (en) 2016-01-21
CN106575085A (zh) 2017-04-19
JP2017520799A (ja) 2017-07-27
KR20170042592A (ko) 2017-04-19

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