NL2014097B1 - Hole transport azomethine molecule. - Google Patents
Hole transport azomethine molecule. Download PDFInfo
- Publication number
- NL2014097B1 NL2014097B1 NL2014097A NL2014097A NL2014097B1 NL 2014097 B1 NL2014097 B1 NL 2014097B1 NL 2014097 A NL2014097 A NL 2014097A NL 2014097 A NL2014097 A NL 2014097A NL 2014097 B1 NL2014097 B1 NL 2014097B1
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- molecule
- photovoltaic device
- hole transport
- azomethine
- Prior art date
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- UHHKSVZZTYJVEG-UHFFFAOYSA-N oxepane Chemical compound C1CCCOCC1 UHHKSVZZTYJVEG-UHFFFAOYSA-N 0.000 description 1
- ATYBXHSAIOKLMG-UHFFFAOYSA-N oxepin Chemical compound O1C=CC=CC=C1 ATYBXHSAIOKLMG-UHFFFAOYSA-N 0.000 description 1
- VXTFGYMINLXJPW-UHFFFAOYSA-N phosphinane Chemical compound C1CCPCC1 VXTFGYMINLXJPW-UHFFFAOYSA-N 0.000 description 1
- UNQNIRQQBJCMQR-UHFFFAOYSA-N phosphorine Chemical compound C1=CC=PC=C1 UNQNIRQQBJCMQR-UHFFFAOYSA-N 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- USPWKWBDZOARPV-UHFFFAOYSA-N pyrazolidine Chemical compound C1CNNC1 USPWKWBDZOARPV-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- SEEPANYCNGTZFQ-UHFFFAOYSA-N sulfadiazine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=NC=CC=N1 SEEPANYCNGTZFQ-UHFFFAOYSA-N 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- NYERMPLPURRVGM-UHFFFAOYSA-N thiazepine Chemical compound S1C=CC=CC=N1 NYERMPLPURRVGM-UHFFFAOYSA-N 0.000 description 1
- JWCVYQRPINPYQJ-UHFFFAOYSA-N thiepane Chemical compound C1CCCSCC1 JWCVYQRPINPYQJ-UHFFFAOYSA-N 0.000 description 1
- BISQTCXKVNCDDA-UHFFFAOYSA-N thiepine Chemical compound S1C=CC=CC=C1 BISQTCXKVNCDDA-UHFFFAOYSA-N 0.000 description 1
- BRNULMACUQOKMR-UHFFFAOYSA-N thiomorpholine Chemical compound C1CSCCN1 BRNULMACUQOKMR-UHFFFAOYSA-N 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 229940086542 triethylamine Drugs 0.000 description 1
- PWYVVBKROXXHEB-UHFFFAOYSA-M trimethyl-[3-(1-methyl-2,3,4,5-tetraphenylsilol-1-yl)propyl]azanium;iodide Chemical compound [I-].C[N+](C)(C)CCC[Si]1(C)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 PWYVVBKROXXHEB-UHFFFAOYSA-M 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Claims (12)
1. Fotovoltaïsche inrichting omvattende een gat transporterende molecuul in een gatentransportlaag, en verder een licht absorberende materiaallaag, waarbij het gat transporterende molecuul omvat een azomethinemolecuul volgens figuur 3
waarbij het azomethinemolecuul omvat ten minste één aromatische eenheid (A) omvattende (Ai) ten minste één stikstofatoom rechtstreeks verbonden aan de aromatische entiteit (fig. 3a), of (Aii) ten minste één koolstofatoom rechtstreeks verbonden aan de aromatische entiteit (fig. 3b), ten minste één aromatische heterocyclische overbruggingsenti-teit (B), waarbij de overbruggings- en aromatische entiteit een verbindende N=C brug (azomethine) hebben, waarbij de over-bruggingsentiteit omvat (Bi) (in geval van Ai) ten minste één koolstofatoom rechtstreeks verbonden aan de aromatische heterocyclische eenheid en aan het stikstofatoom (fig. 3a), of (Bii) (in geval van Aii) ten minste één stikstofatoom direct verbonden aan de aromatische heterocyclische eenheid en aan het koolstofatoom (fig. 3b).
2. Fotovoltaïsche inrichting volgens conclusie 1, omvattende ten minste één gatmobiliteitverbeteraar in de gatentransportlaag, waarbij een eerste gatenmobiliteitverbeteraar aanwezig is in een hoeveelheid van 0,1-100 mol%, betrokken op het azomethine molecuul.
3. Fotovoltaïsche inrichting volgens één van de voorafgaande conclusies, waarbij het molecuul een (A-B)n-A structuur (fig. 3c) of (B-A)n-B structuur heeft, waarbij ne[l-5], of waarbij het molecuul een Am-B structuur (fig. 3d) heeft, waarbij me [1-5], of waarbij het molecuul een Br-A structuur (fig. 3e) heeft, waarbij re [1-5], of combinaties daarvan.
4. Fotovoltaische inrichting volgens één van de voorafgaande conclusies, waarbij de aromatische heterocyclische overbruggingseenheid omvat één of meer van S, N, P, Si, Se en 0.
5. Fotovoltaische inrichting volgens één van de voorafgaande conclusies, omvattende ten minste één 4- aminotrifenyl-amine-X2 (TPA) volgens figuur 2,
en waarbij de overbruggingsentiteit X is gekozen uit 2,5-thifeen-dicarbaldehyde (Th), 2,3-dihydrothiëno[3,4-b][1,4]dioxine-5,7-dicarbaldehyde (EDOT), 2,2 '-bithiazool-5,5'-dicarbaldehyde (BTz), 4,7-bis(5-formylthiofeen-2-yl)-2,1,3-benzothiadiazool (TBT), en combinaties daarvan.
6. Fotovoltaische inrichting volgens conclusie 5, waarbij X onafhankelijk is gekozen uit H,-CN, OAlk, Alk, en combinaties daarvan, en waarin Alk is gekozen uit alkanen, en combinaties daarvan.
7. Fotovoltaische inrichting volgens één der conclusies 1-6, waarbij de gatentransportlaag een tweede gatentrans-portverbeteraar in een hoeveelheid van 0,001-20 mol% betrokken op het azomethine molecuul omvat.
8. Fotovoltaische inrichting volgens één der conclusies 1-7, omvattende een stapeling van een substraat, een eerste optisch transparante elektrodelaag, fungerend als anode of kathode, een tweede elektrodelaag, fungerend als een kathode of anode, en tussen de elektrodelagen (i) een perovskietlaag als lichtabsorberende laag, (ii) een gatentransportlaag, waarbij de gatentransportlaag in contact is met de anode laag en de perovskietlaag, en (iii) een tussenlaag, waarbij de tussenlaag in contact is met de kathode laag en de perovskietlaag.
9. Fotovoltaïsche inrichting volgens conclusie 8, waarbij het substraat is gekozen uit glas, silicium, staal, aluminium, siliciumoxide, polymeren, en combinaties daarvan, en waarbij de eerste elektrodelaag is gekozen uit tin gedoteerd indiumoxide (ITO), grafeen, fluor gedoteerd tinoxide (FTO), en waarbij de tweede elektrodelaag is gekozen uit metalen, zoals Al, Cu, Mg, Ba, ZnO, Au, Ag, en Ca, en waarbij de tussenlaag is gekozen uit T1O2 en fullere- nen.
10. Fotovoltaïsche inrichting volgens één der conclusies 8-9, verder omvattende een elektronen transportlaag.
11. Fotovoltaïsche inrichting volgens één der conclusies 8-10, met een sequentie van lagen die één of meer omvat van een 20-1000 nm eerste elektrodelaag, zoals ITO, een 10-1000 nm licht absorberende laag, een 10-300 nm gatentransportlaag, een 0,5-50 nm elektronen transportlaag, en een 20-200 nm tweede elektrodelaag.
12. Zonnecel omvattende een fotovoltaïsche inrichting volgens één der conclusies 1-11.
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| NL2014097A NL2014097B1 (en) | 2015-01-08 | 2015-01-08 | Hole transport azomethine molecule. |
| PCT/NL2016/050007 WO2016111623A1 (en) | 2015-01-08 | 2016-01-07 | Hole transport azomethine molecule |
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| NL2014097A NL2014097B1 (en) | 2015-01-08 | 2015-01-08 | Hole transport azomethine molecule. |
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| NL2014097B1 true NL2014097B1 (en) | 2016-09-30 |
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| CN107785487A (zh) * | 2017-10-31 | 2018-03-09 | 南京旭羽睿材料科技有限公司 | 一种石墨烯薄膜太阳能电池及其制备方法 |
| CN108054279B (zh) * | 2017-12-07 | 2021-06-11 | 暨南大学 | Fk102配体修饰的钙钛矿型太阳能电池及其钙钛矿层的制备方法 |
| CN108682747B (zh) * | 2018-05-16 | 2020-11-24 | 西安电子科技大学 | 一种双异质结钙钛矿光电器件及其制备方法 |
| JP7319508B2 (ja) | 2018-11-30 | 2023-08-02 | 日亜化学工業株式会社 | セラミックス焼結体の製造方法、セラミックス焼結体及び発光装置 |
| CN115440889B (zh) * | 2022-09-06 | 2025-12-16 | 华中科技大学鄂州工业技术研究院 | 一种提高钙钛矿太阳能电池效率和稳定性的方法及钙钛矿太阳能电池 |
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| WO2016111623A1 (en) | 2016-07-14 |
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