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NL2003192A1 - Alignment of collector device in lithographic apparatus. - Google Patents

Alignment of collector device in lithographic apparatus. Download PDF

Info

Publication number
NL2003192A1
NL2003192A1 NL2003192A NL2003192A NL2003192A1 NL 2003192 A1 NL2003192 A1 NL 2003192A1 NL 2003192 A NL2003192 A NL 2003192A NL 2003192 A NL2003192 A NL 2003192A NL 2003192 A1 NL2003192 A1 NL 2003192A1
Authority
NL
Netherlands
Prior art keywords
alignment
lithographic apparatus
collector device
collector
lithographic
Prior art date
Application number
NL2003192A
Other languages
English (en)
Inventor
Michel Klaassen
Jan Van Schoot
Sylvain Dutartre
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL2003192A1 publication Critical patent/NL2003192A1/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H10P76/00—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
NL2003192A 2008-07-30 2009-07-13 Alignment of collector device in lithographic apparatus. NL2003192A1 (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8475908P 2008-07-30 2008-07-30

Publications (1)

Publication Number Publication Date
NL2003192A1 true NL2003192A1 (nl) 2010-02-02

Family

ID=41119872

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2003192A NL2003192A1 (nl) 2008-07-30 2009-07-13 Alignment of collector device in lithographic apparatus.

Country Status (7)

Country Link
US (1) US8704199B2 (nl)
JP (1) JP5377641B2 (nl)
KR (1) KR101637392B1 (nl)
CN (1) CN102099744B (nl)
NL (1) NL2003192A1 (nl)
TW (1) TWI457713B (nl)
WO (1) WO2010012589A1 (nl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8958053B2 (en) * 2010-08-11 2015-02-17 Asml Netherlands B.V. Lithographic apparatus and alignment method
DE102012208514A1 (de) * 2012-05-22 2013-11-28 Carl Zeiss Smt Gmbh Justagevorrichtung sowie Masken-Inspektionsvorrichtung mit einer derartigen Justagevorrichtung
US9798225B2 (en) * 2013-11-05 2017-10-24 Asml Netherlands B.V. Method of characterizing, method of forming a model, method of simulating, mask manufacturing method and device manufacturing method
JP2019510990A (ja) * 2016-01-18 2019-04-18 エーエスエムエル ネザーランズ ビー．ブイ． ビーム測定システム、リソグラフィシステム及び方法
CN110612482B (zh) * 2017-05-10 2022-04-26 Asml荷兰有限公司 激光产生的等离子体源
JP6788559B2 (ja) * 2017-09-04 2020-11-25 キヤノン株式会社 パターン形成方法、リソグラフィ装置、および物品製造方法
CN111133840A (zh) * 2017-09-20 2020-05-08 Asml荷兰有限公司 辐射源
JP7150535B2 (ja) 2018-09-13 2022-10-11 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
DE102020200158A1 (de) 2020-01-09 2021-07-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
DE102020212229B3 (de) * 2020-09-29 2022-01-20 Carl Zeiss Smt Gmbh Blenden-Vorrichtung zur Begrenzung eines Strahlengangs zwischen einer Lichtquelle und einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die Projektionslithographie

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003277893A1 (en) * 2002-09-30 2004-04-23 Asml Netherlands B.V. Illumination system for a wavelength = 193 nm, comprising sensors for determining the illumination
JP2005294087A (ja) * 2004-04-01 2005-10-20 Nikon Corp 光源ユニット、照明光学装置、露光装置および露光方法
JP4574211B2 (ja) * 2004-04-19 2010-11-04 キヤノン株式会社 光源装置、当該光源装置を有する露光装置
US7113261B2 (en) 2004-06-08 2006-09-26 Asml Netherlands B.V. Radiation system, lithographic apparatus, device manufacturing method and device manufactured thereby
US7098466B2 (en) 2004-06-30 2006-08-29 Intel Corporation Adjustable illumination source
JP4878108B2 (ja) * 2004-07-14 2012-02-15 キヤノン株式会社 露光装置、デバイス製造方法、および測定装置
JP2006128342A (ja) * 2004-10-28 2006-05-18 Canon Inc 露光装置、光源装置及びデバイス製造方法
JP2006203135A (ja) * 2005-01-24 2006-08-03 Canon Inc 光学装置、調整方法、露光装置及びデバイス製造方法
US7180083B2 (en) 2005-06-27 2007-02-20 Cymer, Inc. EUV light source collector erosion mitigation
JP4875879B2 (ja) * 2005-10-12 2012-02-15 株式会社小松製作所 極端紫外光源装置の初期アライメント方法
JP2007142361A (ja) * 2005-10-21 2007-06-07 Canon Inc 露光装置及びデバイス製造方法
KR101370203B1 (ko) 2005-11-10 2014-03-05 칼 짜이스 에스엠테 게엠베하 광원의 요동을 측정하기 위한 시스템을 구비한 ｅｕｖ 조명시스템
DE102006022352B4 (de) * 2006-05-12 2014-11-20 Qimonda Ag Anordnung zur Projektion eines Musters von einer EUV-Maske auf ein Substrat
DE102006039760A1 (de) * 2006-08-24 2008-03-13 Carl Zeiss Smt Ag Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität
JP5449352B2 (ja) 2008-07-30 2014-03-19 エーエスエムエル ネザーランズ ビー．ブイ． 放射源、リソグラフィ装置、およびデバイス製造方法

Also Published As

Publication number Publication date
CN102099744A (zh) 2011-06-15
KR20110038714A (ko) 2011-04-14
US20110188018A1 (en) 2011-08-04
KR101637392B1 (ko) 2016-07-07
TW201013328A (en) 2010-04-01
JP2011529629A (ja) 2011-12-08
TWI457713B (zh) 2014-10-21
JP5377641B2 (ja) 2013-12-25
WO2010012589A1 (en) 2010-02-04
US8704199B2 (en) 2014-04-22
CN102099744B (zh) 2014-07-23

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WDAP Patent application withdrawn

Effective date: 20100702