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NL2003143A1 - Illumination optimization. - Google Patents

Illumination optimization. Download PDF

Info

Publication number
NL2003143A1
NL2003143A1 NL2003143A NL2003143A NL2003143A1 NL 2003143 A1 NL2003143 A1 NL 2003143A1 NL 2003143 A NL2003143 A NL 2003143A NL 2003143 A NL2003143 A NL 2003143A NL 2003143 A1 NL2003143 A1 NL 2003143A1
Authority
NL
Netherlands
Prior art keywords
illumination optimization
optimization
illumination
Prior art date
Application number
NL2003143A
Other languages
Dutch (nl)
Inventor
Jun Ye
Yu Cao
Hanying Feng
Original Assignee
Brion Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL1036189A external-priority patent/NL1036189A1/en
Application filed by Brion Tech Inc filed Critical Brion Tech Inc
Publication of NL2003143A1 publication Critical patent/NL2003143A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
NL2003143A 2008-07-07 2009-07-07 Illumination optimization. NL2003143A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7859908P 2008-07-07 2008-07-07
NL1036189A NL1036189A1 (en) 2007-12-05 2008-11-12 Methods and System for Lithography Process Window Simulation.
JP2008305942A JP5016585B2 (en) 2007-12-05 2008-12-01 Method and system for simulating a lithography process window

Publications (1)

Publication Number Publication Date
NL2003143A1 true NL2003143A1 (en) 2010-01-11

Family

ID=41119880

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2003143A NL2003143A1 (en) 2008-07-07 2009-07-07 Illumination optimization.

Country Status (4)

Country Link
US (1) US8542340B2 (en)
NL (1) NL2003143A1 (en)
TW (1) TW201007383A (en)
WO (1) WO2010005957A1 (en)

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US8576377B2 (en) * 2006-12-28 2013-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8611637B2 (en) * 2007-01-11 2013-12-17 Kla-Tencor Corporation Wafer plane detection of lithographically significant contamination photomask defects
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8057970B2 (en) 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
US7901850B2 (en) 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US8039176B2 (en) 2009-08-26 2011-10-18 D2S, Inc. Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
KR101766734B1 (en) 2008-11-21 2017-08-16 에이에스엠엘 네델란즈 비.브이. Process optimization with free source and free mask
NL2003699A (en) 2008-12-18 2010-06-21 Brion Tech Inc Method and system for lithography process-window-maximixing optical proximity correction.
US8191016B2 (en) * 2009-02-23 2012-05-29 Cadence Design Systems, Inc. System and method for compressed post-OPC data
WO2010117626A2 (en) * 2009-03-31 2010-10-14 Christophe Pierrat Lithography modelling and applications
US8786824B2 (en) * 2009-06-10 2014-07-22 Asml Netherlands B.V. Source-mask optimization in lithographic apparatus
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
WO2011110039A1 (en) * 2010-03-12 2011-09-15 Mediatek Singapore Pte. Ltd. Motion prediction methods
US8321822B2 (en) * 2010-05-27 2012-11-27 United Microelectronics Corp. Method and computer-readable medium of optical proximity correction
NL2007303A (en) * 2010-09-23 2012-03-26 Asml Netherlands Bv Process tuning with polarization.
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
WO2012148606A2 (en) 2011-04-26 2012-11-01 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9207544B2 (en) * 2011-06-14 2015-12-08 Carl Zeiss Sms Gmbh Method for simulating an aerial image
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
NL2008957A (en) 2011-07-08 2013-01-09 Asml Netherlands Bv Methods and systems for pattern design with tailored response to wavefront aberration.
EP2570854B1 (en) 2011-09-16 2016-11-30 Imec Illumination-source shape definition in optical lithography
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR20150001834A (en) 2012-04-18 2015-01-06 디2에스, 인코포레이티드 Method and system for critical dimension uniformity using charged particle beam lithography
KR102154105B1 (en) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 Method and system for forming patterns using charged particle beam lithograph
KR101757780B1 (en) 2012-05-31 2017-07-14 에이에스엠엘 네델란즈 비.브이. Gradient-based pattern and evaluation point selection
NL2012197A (en) 2013-02-25 2014-08-26 Asml Netherlands Bv Discrete source mask optimization.
US9081289B2 (en) * 2013-03-15 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for optimization of an imaged pattern of a semiconductor device
US9679360B2 (en) * 2013-05-10 2017-06-13 Trustees Of Princeton University High-resolution light-field imaging
KR102227127B1 (en) 2014-02-12 2021-03-12 삼성전자주식회사 Design rule generating apparatus and method using lithography simulation
US9575412B2 (en) * 2014-03-31 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing pole imbalance by adjusting exposure intensity
EP3037878B1 (en) * 2014-12-23 2020-09-09 Aselta Nanographics Method of applying vertex based corrections to a semiconductor design
US10025177B2 (en) 2016-03-16 2018-07-17 Samsung Electronics Co., Ltd. Efficient way to creating process window enhanced photomask layout
US9990460B2 (en) * 2016-09-30 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source beam optimization method for improving lithography printability
US10527928B2 (en) 2016-12-20 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Optical proximity correction methodology using pattern classification for target placement
US10599040B2 (en) 2017-08-18 2020-03-24 Asml Netherland B.V. Lithographic apparatus and associated method
US10705420B2 (en) * 2018-05-15 2020-07-07 Asml Us, Llc Mask bias approximation
WO2021160522A1 (en) * 2020-02-12 2021-08-19 Asml Netherlands B.V. Method for determining a mask pattern comprising optical proximity corrections using a trained machine learning model
CN113820922B (en) * 2020-06-18 2024-08-02 台湾积体电路制造股份有限公司 Hot spot prediction method, hot spot prediction device and recording medium
CN119916654B (en) * 2025-04-02 2025-08-01 全智芯(上海)技术有限公司 Method, apparatus, storage medium and program product for light source mask optimization

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US5296891A (en) * 1990-05-02 1994-03-22 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Illumination device
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
WO1997033205A1 (en) * 1996-03-06 1997-09-12 Philips Electronics N.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69735016T2 (en) * 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographic device with two object holders
US20040265707A1 (en) * 2003-03-31 2004-12-30 Robert Socha Source and mask optimization
US20040197672A1 (en) * 2003-04-01 2004-10-07 Numerical Technologies, Inc. Programmable aperture for lithographic imaging systems
US20050015233A1 (en) 2003-07-17 2005-01-20 International Business Machines Corporation Method for computing partially coherent aerial imagery
US7003758B2 (en) * 2003-10-07 2006-02-21 Brion Technologies, Inc. System and method for lithography simulation
US7046339B2 (en) * 2004-03-05 2006-05-16 Micron Technology, Inc. Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
US8043797B2 (en) * 2004-10-12 2011-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7747978B2 (en) 2005-08-08 2010-06-29 Asml Netherlands B.V. System and method for creating a focus-exposure model of a lithography process
JP4954211B2 (en) 2005-09-09 2012-06-13 エーエスエムエル ネザーランズ ビー．ブイ． System and method for performing mask verification using an individual mask error model
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL1036189A1 (en) * 2007-12-05 2009-06-08 Brion Tech Inc Methods and System for Lithography Process Window Simulation.

Also Published As

Publication number Publication date
US20110116067A1 (en) 2011-05-19
TW201007383A (en) 2010-02-16
WO2010005957A1 (en) 2010-01-14
US8542340B2 (en) 2013-09-24

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Date Code Title Description
AD1A A request for search or an international type search has been filed
WDAP Patent application withdrawn

Effective date: 20100422