NL192927B - Werkwijze voor het verhinderen van corrosie na etsen van een film van aluminium of aluminiumlegering. - Google Patents
Werkwijze voor het verhinderen van corrosie na etsen van een film van aluminium of aluminiumlegering.Info
- Publication number
- NL192927B NL192927B NL8102678A NL8102678A NL192927B NL 192927 B NL192927 B NL 192927B NL 8102678 A NL8102678 A NL 8102678A NL 8102678 A NL8102678 A NL 8102678A NL 192927 B NL192927 B NL 192927B
- Authority
- NL
- Netherlands
- Prior art keywords
- aluminum
- etching
- alloy film
- preventing corrosion
- aluminum alloy
- Prior art date
Links
Classifications
-
- H10P70/273—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL9700010A NL193618C (nl) | 1980-07-28 | 1997-09-25 | Werkwijze voor het verhinderen van corrosie na etsen van een film van aluminium of aluminiumlegering. |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06172745 US4325984B2 (en) | 1980-07-28 | 1980-07-28 | Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films |
| US17274580 | 1980-07-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8102678A NL8102678A (nl) | 1982-02-16 |
| NL192927B true NL192927B (nl) | 1998-01-05 |
| NL192927C NL192927C (nl) | 1998-05-07 |
Family
ID=22629038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8102678A NL192927C (nl) | 1980-07-28 | 1981-06-02 | Werkwijze voor het verhinderen van corrosie na etsen van een film van aluminium of aluminiumlegering. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4325984B2 (nl) |
| JP (2) | JPS5812343B2 (nl) |
| CA (1) | CA1151106A (nl) |
| DE (1) | DE3127765C2 (nl) |
| FR (1) | FR2487382B1 (nl) |
| GB (1) | GB2080737B (nl) |
| IT (1) | IT1144820B (nl) |
| NL (1) | NL192927C (nl) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4351696A (en) * | 1981-10-28 | 1982-09-28 | Fairchild Camera & Instrument Corp. | Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma |
| US4370195A (en) * | 1982-03-25 | 1983-01-25 | Rca Corporation | Removal of plasma etching residues |
| US4464422A (en) * | 1982-11-09 | 1984-08-07 | Murata Manufacturing Co., Ltd. | Process for preventing oxidation of copper film on ceramic body |
| JPS59189633A (ja) * | 1983-04-13 | 1984-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6184834A (ja) * | 1984-10-03 | 1986-04-30 | Agency Of Ind Science & Technol | 加工プロセス中の半導体基板の保護方法 |
| US4592800A (en) * | 1984-11-02 | 1986-06-03 | Oerlikon-Buhrle U.S.A. Inc. | Method of inhibiting corrosion after aluminum etching |
| US4668335A (en) * | 1985-08-30 | 1987-05-26 | Advanced Micro Devices, Inc. | Anti-corrosion treatment for patterning of metallic layers |
| JP2590472B2 (ja) * | 1987-03-27 | 1997-03-12 | ソニー株式会社 | エツチング方法 |
| US5200017A (en) * | 1989-02-27 | 1993-04-06 | Hitachi, Ltd. | Sample processing method and apparatus |
| JP2695960B2 (ja) * | 1989-03-10 | 1998-01-14 | 株式会社日立製作所 | 試料処理方法 |
| US4985113A (en) * | 1989-03-10 | 1991-01-15 | Hitachi, Ltd. | Sample treating method and apparatus |
| JP2501925B2 (ja) * | 1989-12-22 | 1996-05-29 | 大同ほくさん株式会社 | 金属材の前処理方法 |
| EP0809283A3 (en) * | 1989-08-28 | 1998-02-25 | Hitachi, Ltd. | Method of treating wafers |
| US5011568A (en) * | 1990-06-11 | 1991-04-30 | Iowa State University Research Foundation, Inc. | Use of sol-gel derived tantalum oxide as a protective coating for etching silicon |
| WO1992000601A1 (fr) * | 1990-06-27 | 1992-01-09 | Fujitsu Limited | Procede de fabrication d'un circuit integre a semi-conducteurs et appareil de fabrication correspondant |
| JPH04311033A (ja) * | 1991-02-20 | 1992-11-02 | Micron Technol Inc | 半導体デバイスのエッチング後処理方法 |
| KR940008323B1 (ko) * | 1991-10-16 | 1994-09-12 | 삼성전자 주식회사 | 반도체장치의 층간접속방법 |
| US5221424A (en) * | 1991-11-21 | 1993-06-22 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch |
| US5545289A (en) * | 1994-02-03 | 1996-08-13 | Applied Materials, Inc. | Passivating, stripping and corrosion inhibition of semiconductor substrates |
| US5533635A (en) * | 1994-10-11 | 1996-07-09 | Chartered Semiconductor Manufacturing Pte. Ltd. | Method of wafer cleaning after metal etch |
| JP2923218B2 (ja) * | 1995-01-30 | 1999-07-26 | 株式会社日立製作所 | 試料処理方法 |
| JP2953974B2 (ja) * | 1995-02-03 | 1999-09-27 | 松下電子工業株式会社 | 半導体装置の製造方法 |
| US5780363A (en) * | 1997-04-04 | 1998-07-14 | International Business Machines Coporation | Etching composition and use thereof |
| US5965465A (en) * | 1997-09-18 | 1999-10-12 | International Business Machines Corporation | Etching of silicon nitride |
| US6033996A (en) * | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
| US6150282A (en) * | 1997-11-13 | 2000-11-21 | International Business Machines Corporation | Selective removal of etching residues |
| US6117796A (en) * | 1998-08-13 | 2000-09-12 | International Business Machines Corporation | Removal of silicon oxide |
| US6200891B1 (en) | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
| JP2000138224A (ja) | 1998-11-04 | 2000-05-16 | Fujitsu Ltd | 半導体装置の製造方法 |
| US6197388B1 (en) * | 1999-03-31 | 2001-03-06 | Lam Research Corporation | Methods of preventing post-etch corrosion of an aluminum neodymium-containing layer |
| US6440864B1 (en) | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
| US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
| US6869818B2 (en) * | 2002-11-18 | 2005-03-22 | Redwood Microsystems, Inc. | Method for producing and testing a corrosion-resistant channel in a silicon device |
| US8101025B2 (en) * | 2003-05-27 | 2012-01-24 | Applied Materials, Inc. | Method for controlling corrosion of a substrate |
| US8323523B2 (en) | 2008-12-17 | 2012-12-04 | Lam Research Corporation | High pressure bevel etch process |
| KR101101312B1 (ko) | 2009-06-11 | 2012-01-02 | 순천대학교 산학협력단 | 아연도금강판의 내식성 향상을 위한 표면처리방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3971684A (en) | 1973-12-03 | 1976-07-27 | Hewlett-Packard Company | Etching thin film circuits and semiconductor chips |
| DE2449731A1 (de) * | 1973-12-03 | 1975-06-05 | Hewlett Packard Co | Aetzverfahren |
| JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
| US4182646A (en) * | 1978-07-27 | 1980-01-08 | John Zajac | Process of etching with plasma etch gas |
| US4183781A (en) * | 1978-09-25 | 1980-01-15 | International Business Machines Corporation | Stabilization process for aluminum microcircuits which have been reactive-ion etched |
-
1980
- 1980-07-28 US US06172745 patent/US4325984B2/en not_active Expired - Lifetime
-
1981
- 1981-03-26 GB GB8109583A patent/GB2080737B/en not_active Expired
- 1981-03-26 CA CA000373924A patent/CA1151106A/en not_active Expired
- 1981-06-02 NL NL8102678A patent/NL192927C/nl not_active IP Right Cessation
- 1981-06-25 FR FR8112480A patent/FR2487382B1/fr not_active Expired
- 1981-07-14 DE DE3127765A patent/DE3127765C2/de not_active Expired
- 1981-07-22 IT IT68019/81A patent/IT1144820B/it active
- 1981-07-28 JP JP56117220A patent/JPS5812343B2/ja not_active Expired
-
1987
- 1987-06-29 JP JP62159932A patent/JPH0665753B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| IT8168019A0 (it) | 1981-07-22 |
| IT1144820B (it) | 1986-10-29 |
| JPH0665753B2 (ja) | 1994-08-24 |
| JPS5757874A (en) | 1982-04-07 |
| JPS63125685A (ja) | 1988-05-28 |
| GB2080737B (en) | 1984-02-08 |
| DE3127765C2 (de) | 1985-11-28 |
| CA1151106A (en) | 1983-08-02 |
| JPS5812343B2 (ja) | 1983-03-08 |
| NL8102678A (nl) | 1982-02-16 |
| FR2487382A1 (fr) | 1982-01-29 |
| FR2487382B1 (fr) | 1986-07-11 |
| US4325984B1 (nl) | 1991-08-06 |
| US4325984B2 (en) | 1998-03-03 |
| NL192927C (nl) | 1998-05-07 |
| DE3127765A1 (de) | 1982-05-06 |
| GB2080737A (en) | 1982-02-10 |
| US4325984A (en) | 1982-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| AK | Correction of former applications already laid open |
Free format text: SHOULD BE DELETED IN PAT.BUL.19/82,PAGE1910,COL.6 |
|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BC | A request for examination has been filed | ||
| V4 | Discontinued because of reaching the maximum lifetime of a patent |
Free format text: 20010602 |