NL185806B - Stralingsgevoelig bekledingsmengsel. - Google Patents

Stralingsgevoelig bekledingsmengsel.

Info

Publication number: NL185806B
Authority: NL; Netherlands
Prior art keywords: radiation; coating mixture; sensitive coating; sensitive; mixture
Prior art date: 1981-09-24

Application number

NLAANVRAGE8203701,A

Other languages

English (en)

Other versions

NL185806C (nl

NL8203701A (nl

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-09-24

Filing date

1982-09-23

Publication date

1990-02-16

1982-09-23 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1983-04-18 Publication of NL8203701A publication Critical patent/NL8203701A/nl

1990-02-16 Publication of NL185806B publication Critical patent/NL185806B/nl

1990-07-16 Application granted granted Critical

1990-07-16 Publication of NL185806C publication Critical patent/NL185806C/nl

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

Physics & Mathematics (AREA)
Spectroscopy & Molecular Physics (AREA)
General Physics & Mathematics (AREA)
Materials For Photolithography (AREA)
Conversion Of X-Rays Into Visible Images (AREA)
Compositions Of Macromolecular Compounds (AREA)
Paints Or Removers (AREA)

NLAANVRAGE8203701,A 1981-09-24 1982-09-23 Stralingsgevoelig bekledingsmengsel. NL185806C (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP14942081		1981-09-24
JP56149420A JPS5852638A (ja)	1981-09-24	1981-09-24	放射線感応性組成物

Publications (3)

Publication Number	Publication Date
NL8203701A NL8203701A (nl)	1983-04-18
NL185806B true NL185806B (nl)	1990-02-16
NL185806C NL185806C (nl)	1990-07-16

Family

ID=15474716

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NLAANVRAGE8203701,A NL185806C (nl)	1981-09-24	1982-09-23	Stralingsgevoelig bekledingsmengsel.

Country Status (4)

Country	Link
US (1)	US4409317A (nl)
JP (1)	JPS5852638A (nl)
DE (1)	DE3235108C2 (nl)
NL (1)	NL185806C (nl)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59152A (ja) *	1982-06-25	1984-01-05	Hitachi Chem Co Ltd	画像形成性樹脂組成物
US4497891A (en) *	1983-10-25	1985-02-05	International Business Machines Corporation	Dry-developed, negative working electron resist system
DE3563273D1 (en) *	1984-03-19	1988-07-14	Nippon Oil Co Ltd	Novel electron beam resist materials
US4550069A (en) *	1984-06-11	1985-10-29	American Hoechst Corporation	Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5143814A (en) *	1984-06-11	1992-09-01	Hoechst Celanese Corporation	Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
US4600683A (en) *	1985-04-22	1986-07-15	International Business Machines Corp.	Cross-linked polyalkenyl phenol based photoresist compositions
US4806458A (en) *	1985-10-28	1989-02-21	Hoechst Celanese Corporation	Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
US4948697A (en) *	1985-10-28	1990-08-14	Hoechst Celanese Corporation	Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4983490A (en) *	1985-10-28	1991-01-08	Hoechst Celanese Corporation	Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US5039594A (en) *	1985-10-28	1991-08-13	Hoechst Celanese Corporation	Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
US4692398A (en) *	1985-10-28	1987-09-08	American Hoechst Corporation	Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
JPS62191850A (ja) *	1986-02-17	1987-08-22	Nec Corp	ポジレジスト材料
DE3705896A1 (de) *	1986-02-24	1987-08-27	Tokyo Ohka Kogyo Co Ltd	Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US4873278A (en) *	1986-11-14	1989-10-10	General Electric Company	Inhibition of irradiation yellowing in polysulfone compositions
JPS63218949A (ja) *	1987-03-06	1988-09-12	Sumitomo Chem Co Ltd	ポジ型レジスト組成物
EP0301641A1 (en) *	1987-07-23	1989-02-01	Koninklijke Philips Electronics N.V.	Master disc and method of manufacturing a matrix
US4824758A (en) *	1988-01-25	1989-04-25	Hoechst Celanese Corp	Photoresist compositions based on acetoxystyrene copolymers
KR920005712B1 (ko) *	1989-04-03	1992-07-13	가부시끼가이샤 도시바	감광성 조성물
US5298367A (en) *	1991-03-09	1994-03-29	Basf Aktiengesellschaft	Production of micromoldings having a high aspect ratio
TW211080B (nl) *	1991-12-12	1993-08-11	American Telephone & Telegraph
US5340687A (en) *	1992-05-06	1994-08-23	Ocg Microelectronic Materials, Inc.	Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
US5550004A (en) *	1992-05-06	1996-08-27	Ocg Microelectronic Materials, Inc.	Chemically amplified radiation-sensitive composition
EP0698825A1 (en) *	1994-07-29	1996-02-28	AT&T Corp.	An energy sensitive resist material and a process for device fabrication using the resist material
US6537736B1 (en)	1999-03-12	2003-03-25	Matsushita Electric Industrial Co., Ltd.	Patten formation method
US7550249B2 (en) *	2006-03-10	2009-06-23	Az Electronic Materials Usa Corp.	Base soluble polymers for photoresist compositions
US7704670B2 (en) *	2006-06-22	2010-04-27	Az Electronic Materials Usa Corp.	High silicon-content thin film thermosets
US7759046B2 (en) *	2006-12-20	2010-07-20	Az Electronic Materials Usa Corp.	Antireflective coating compositions
US8026040B2 (en)	2007-02-20	2011-09-27	Az Electronic Materials Usa Corp.	Silicone coating composition
CN101622296B (zh)	2007-02-27	2013-10-16	Az电子材料美国公司	硅基抗反射涂料组合物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1375461A (nl) *	1972-05-05	1974-11-27
US3935331A (en) *	1975-01-09	1976-01-27	Rca Corporation	Preparation of olefin SO2 copolymer electron beam resist films and use of same for recording
US4267257A (en) *	1976-07-30	1981-05-12	Rca Corporation	Method for forming a shallow surface relief pattern in a poly(olefin sulfone) layer
US4289845A (en) *	1978-05-22	1981-09-15	Bell Telephone Laboratories, Inc.	Fabrication based on radiation sensitive resists and related products

1981
- 1981-09-24 JP JP56149420A patent/JPS5852638A/ja active Granted
1982
- 1982-09-21 US US06/420,878 patent/US4409317A/en not_active Expired - Lifetime
- 1982-09-22 DE DE3235108A patent/DE3235108C2/de not_active Expired
- 1982-09-23 NL NLAANVRAGE8203701,A patent/NL185806C/nl not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE3235108A1 (de)	1983-04-07
US4409317A (en)	1983-10-11
JPS5852638A (ja)	1983-03-28
JPH0151822B2 (nl)	1989-11-06
DE3235108C2 (de)	1986-06-19
NL185806C (nl)	1990-07-16
NL8203701A (nl)	1983-04-18

Publication	Publication Date	Title
NL185806C (nl)	1990-07-16	Stralingsgevoelig bekledingsmengsel.
FI821013A7 (fi)	1982-09-25	Yhdisteitä.
FI77053B (fi)	1988-09-30	Foerfarande foer selektiv hydrering av maongfaldigt omaettade kolvaeten i kolvaeteblandningar.
FI74024B (fi)	1987-08-31	Foerfarande foer framstaellning av d-fenylalanyl-l-prolyl-l-argininaldehydsulfat.
DE3280162D1 (de)	1990-06-07	Polyaethylenzusammensetzung.
NO813062L (no)	1982-03-11	Beleggsblanding.
FI73533B (fi)	1987-06-30	Magnetskivekassett.
NL191491C (nl)	1995-08-04	Spuitapparaat.
ES516372A0 (es)	1983-12-16	Cianoesteroides.
FI78593B (fi)	1989-04-28	Kylanordning av teleteknisk utrustning.
FI862616A7 (fi)	1986-06-18	Foerfarande foer framstaellning av naftokinoner.
FI821458A7 (fi)	1982-10-29	Päällystysseoksia.
IT8223146A0 (it)	1982-09-07	Benzotiazolin-composti.
FI823883A7 (fi)	1983-05-18	Yhdisteitä.
IT8224195A0 (it)	1982-11-11	Composti triarilboranoisociano-metallici.
FI834285L (fi)	1983-11-23	Kopplingsanordning foer justering av effekt.
FI73535B (fi)	1987-06-30	Kylanordning foer en tryckvattenreaktors primaerkrets.
NO156069C (no)	1987-07-15	Boelgeleder.
FI840054A7 (fi)	1984-01-06	Kugghjul.
FI821073A7 (fi)	1982-10-02	Uusia fenyyli-perhydroatsepiinejä.
FI821072A7 (fi)	1982-10-02	Uusia fenyyli-piperidiinejä.
FI73504B (fi)	1987-06-30	Elektropneumatisk signalomvandlare.
ATE4954T1 (de)	1983-10-15	Mykotoxinbindendes gemisch.
ES262344Y (es)	1983-04-01	Mosqueton.
FI77045B (fi)	1988-09-30	Foergrenade amider av l-aspartyl-d-aminosyrapeptider.

Legal Events

Date	Code	Title	Description
1993-05-17	V1	Lapsed because of non-payment of the annual fee