Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
  • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
  • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
  • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
  • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
  • H10D84/401—Combinations of FETs or IGBTs with BJTs
  • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
  • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
  • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
  • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
• • H10W10/00—
• • H10W10/01—
• • H10W10/011—
• • H10W10/021—
• • H10W10/031—
• • H10W10/10—
• • H10W10/20—
• • H10W10/30—

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Semiconductor Integrated Circuits (AREA)
• Shift Register Type Memory (AREA)
• Static Random-Access Memory (AREA)
• Amplifiers (AREA)
• Cable Transmission Systems, Equalization Of Radio And Reduction Of Echo (AREA)

Applications Claiming Priority (6)

Publications (3)

Family

ID=27524396

Family Applications (2)

Family Applications Before (1)

Country Status (6)

Families Citing this family (29)

Family Cites Families (1)

• 1967
  • 1967-11-13 JP JP7263067A patent/JPS4632972B1/ja active Pending
  • 1967-11-13 JP JP7262967A patent/JPS468254B1/ja active Pending
  • 1967-11-13 JP JP7263167A patent/JPS468255B1/ja active Pending
  • 1967-11-15 JP JP7305567A patent/JPS4712496B1/ja active Pending
  • 1967-11-15 JP JP7305667A patent/JPS479613B1/ja active Pending
• 1968
  • 1968-10-18 US US04/768,794 patent/US3934159A/en not_active Expired - Lifetime
  • 1968-11-05 GB GB5231768A patent/GB1238360A/en not_active Expired
  • 1968-11-06 FR FR17270568A patent/FR1603516A/fr not_active Expired
  • 1968-11-13 DE DE19681808661 patent/DE1808661A1/de active Pending
  • 1968-11-13 NL NL686816133A patent/NL155403B/xx not_active IP Right Cessation
• 1978
  • 1978-01-24 NL NLAANVRAGE7800846,A patent/NL173580C/xx not_active IP Right Cessation

Also Published As

Similar Documents

Legal Events