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NL162512B - Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan. - Google Patents

Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan.

Info

Publication number
NL162512B
NL162512B NL7014842.A NL7014842A NL162512B NL 162512 B NL162512 B NL 162512B NL 7014842 A NL7014842 A NL 7014842A NL 162512 B NL162512 B NL 162512B
Authority
NL
Netherlands
Prior art keywords
semi
manufacture
conductor device
conductor
Prior art date
Application number
NL7014842.A
Other languages
English (en)
Other versions
NL162512C (nl
NL7014842A (nl
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45010376A external-priority patent/JPS504310B1/ja
Priority claimed from JP45017103A external-priority patent/JPS505908B1/ja
Priority claimed from JP45020826A external-priority patent/JPS4940111B1/ja
Priority claimed from JP45025627A external-priority patent/JPS501871B1/ja
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of NL7014842A publication Critical patent/NL7014842A/xx
Publication of NL162512B publication Critical patent/NL162512B/nl
Application granted granted Critical
Publication of NL162512C publication Critical patent/NL162512C/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H10P32/00—
    • H10P32/141—
    • H10P32/171—
    • H10P95/00—
NL7014842.A 1970-02-07 1970-10-09 Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan. NL162512C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP45010376A JPS504310B1 (nl) 1970-02-07 1970-02-07
JP45017103A JPS505908B1 (nl) 1970-03-02 1970-03-02
JP45020826A JPS4940111B1 (nl) 1970-03-13 1970-03-13
JP45025627A JPS501871B1 (nl) 1970-03-28 1970-03-28

Publications (3)

Publication Number Publication Date
NL7014842A NL7014842A (nl) 1971-08-10
NL162512B true NL162512B (nl) 1979-12-17
NL162512C NL162512C (nl) 1980-05-16

Family

ID=27455384

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7014842.A NL162512C (nl) 1970-02-07 1970-10-09 Halfgeleiderinrichting en werkwijze voor de vervaar- diging ervan.

Country Status (4)

Country Link
DE (1) DE2049696C3 (nl)
FR (1) FR2080965B1 (nl)
GB (1) GB1288029A (nl)
NL (1) NL162512C (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821038A (en) * 1972-05-22 1974-06-28 Ibm Method for fabricating semiconductor structures with minimum crystallographic defects
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953034A (en) * 1961-07-13 1964-03-25 Clevite Corp Improvements in or relating to semiconductor devices
AT243318B (de) * 1962-09-21 1965-11-10 Siemens Ag Verfahren zur Herstellung hoher Dotierungsgrade in Halbleiterstoffen
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient

Also Published As

Publication number Publication date
DE2049696B2 (de) 1981-06-11
FR2080965B1 (nl) 1976-05-28
NL162512C (nl) 1980-05-16
FR2080965A1 (nl) 1971-11-26
DE2049696A1 (de) 1971-08-26
DE2049696C3 (de) 1982-02-18
NL7014842A (nl) 1971-08-10
GB1288029A (nl) 1972-09-06

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent