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NL160988B - SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE. - Google Patents

SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE.

Info

Publication number
NL160988B
NL160988B NL7107805.A NL7107805A NL160988B NL 160988 B NL160988 B NL 160988B NL 7107805 A NL7107805 A NL 7107805A NL 160988 B NL160988 B NL 160988B
Authority
NL
Netherlands
Prior art keywords
semiconductor device
manufacture
field effect
effect transistor
control electrode
Prior art date
Application number
NL7107805.A
Other languages
Dutch (nl)
Other versions
NL160988C (en
NL7107805A (en
Inventor
Joseph Dr Shappir
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL7107805.A priority Critical patent/NL160988C/en
Application filed by Philips Nv filed Critical Philips Nv
Priority to GB1786072A priority patent/GB1389311A/en
Priority to DE2218680A priority patent/DE2218680C2/en
Priority to JP3838872A priority patent/JPS5416194B1/ja
Priority to CH570072A priority patent/CH542519A/en
Priority to NO1346/72A priority patent/NO134676C/no
Priority to DK188272AA priority patent/DK135819B/en
Priority to ES401854A priority patent/ES401854A1/en
Priority to SE7205034A priority patent/SE371333B/xx
Priority to IT68209/72A priority patent/IT958758B/en
Priority to AT338972A priority patent/AT351597B/en
Priority to BR2321/72A priority patent/BR7202321D0/en
Priority to CA140,068A priority patent/CA963172A/en
Priority to BE782285A priority patent/BE782285A/en
Priority to FR7213556A priority patent/FR2140383B1/fr
Priority to ES408617A priority patent/ES408617A1/en
Publication of NL7107805A publication Critical patent/NL7107805A/xx
Priority to IN584/CAL/73A priority patent/IN139051B/en
Priority to US454307A priority patent/US3921283A/en
Priority to US05/458,527 priority patent/US4016594A/en
Priority to JP51010439A priority patent/JPS51139276A/en
Priority to JP51010440A priority patent/JPS51139277A/en
Priority to JP1043876A priority patent/JPS5416397B2/ja
Publication of NL160988B publication Critical patent/NL160988B/en
Application granted granted Critical
Publication of NL160988C publication Critical patent/NL160988C/en
Priority to JP8223280A priority patent/JPS568880A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/61—
    • H10W10/0121—
    • H10W10/13—
NL7107805.A 1971-06-08 1971-06-08 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE. NL160988C (en)

Priority Applications (23)

Application Number Priority Date Filing Date Title
NL7107805.A NL160988C (en) 1971-06-08 1971-06-08 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE.
BE782285A BE782285A (en) 1971-06-08 1972-04-18 SEMICONDUCTOR DEVICE, AND PROCESS FOR ITS MANUFACTURING
JP3838872A JPS5416194B1 (en) 1971-06-08 1972-04-18
CH570072A CH542519A (en) 1971-06-08 1972-04-18 Semiconductor device and method of manufacturing the same
NO1346/72A NO134676C (en) 1971-06-08 1972-04-18
DK188272AA DK135819B (en) 1971-06-08 1972-04-18 Semiconductor device and method of its manufacture.
ES401854A ES401854A1 (en) 1971-06-08 1972-04-18 A SEMICONDUCTOR DEVICE.
SE7205034A SE371333B (en) 1971-06-08 1972-04-18
IT68209/72A IT958758B (en) 1971-06-08 1972-04-18 SEMICONDUCTIVE DEVICE AND PROCEDURE FOR ITS FACTORY
DE2218680A DE2218680C2 (en) 1971-06-08 1972-04-18 Semiconductor device and method for its manufacture
BR2321/72A BR7202321D0 (en) 1971-06-08 1972-04-18 A SEMICONDUCTOR DEVICE AND DEVICE MANUFACTURING PROCESS
CA140,068A CA963172A (en) 1971-06-08 1972-04-18 Semiconductor device and method of manufacturing the device
GB1786072A GB1389311A (en) 1971-06-08 1972-04-18 Semiconductor device manufacture
AT338972A AT351597B (en) 1971-06-08 1972-04-18 MONOLITHIC SEMICONDUCTOR DEVICE WITH RECESSED INSULATION PATTERN AND FIELD EFFECT TRANSISTOR WITH INSULATED GATE ELECTRODE AND METHOD FOR MAKING SAME
FR7213556A FR2140383B1 (en) 1971-06-08 1972-04-18
ES408617A ES408617A1 (en) 1971-06-08 1972-11-15 A METHOD FOR THE MANUFACTURE OF A SEMICONDUC-TOR DEVICE.
IN584/CAL/73A IN139051B (en) 1971-06-08 1973-03-15
US454307A US3921283A (en) 1971-06-08 1974-03-25 Semiconductor device and method of manufacturing the device
US05/458,527 US4016594A (en) 1971-06-08 1974-04-08 Semiconductor device and method of manufacturing the device
JP51010439A JPS51139276A (en) 1971-06-08 1976-02-04 Semiconductor device
JP51010440A JPS51139277A (en) 1971-06-08 1976-02-04 Method of producing semiconductor device
JP1043876A JPS5416397B2 (en) 1971-06-08 1976-02-04
JP8223280A JPS568880A (en) 1971-06-08 1980-06-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7107805.A NL160988C (en) 1971-06-08 1971-06-08 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE.

Publications (3)

Publication Number Publication Date
NL7107805A NL7107805A (en) 1972-12-12
NL160988B true NL160988B (en) 1979-07-16
NL160988C NL160988C (en) 1979-12-17

Family

ID=19813322

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7107805.A NL160988C (en) 1971-06-08 1971-06-08 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE.

Country Status (16)

Country Link
JP (5) JPS5416194B1 (en)
AT (1) AT351597B (en)
BE (1) BE782285A (en)
BR (1) BR7202321D0 (en)
CA (1) CA963172A (en)
CH (1) CH542519A (en)
DE (1) DE2218680C2 (en)
DK (1) DK135819B (en)
ES (2) ES401854A1 (en)
FR (1) FR2140383B1 (en)
GB (1) GB1389311A (en)
IN (1) IN139051B (en)
IT (1) IT958758B (en)
NL (1) NL160988C (en)
NO (1) NO134676C (en)
SE (1) SE371333B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7205000A (en) * 1972-04-14 1973-10-16
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure
CA1017073A (en) * 1974-06-03 1977-09-06 Fairchild Camera And Instrument Corporation Complementary insulated gate field effect transistor structure and process for fabricating the structure
US3943542A (en) * 1974-11-06 1976-03-09 International Business Machines, Corporation High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
JPS5286083A (en) 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4277882A (en) * 1978-12-04 1981-07-14 Fairchild Camera And Instrument Corporation Method of producing a metal-semiconductor field-effect transistor
JPS58222558A (en) * 1982-06-18 1983-12-24 Hitachi Ltd Semiconductor device
JPS5955052A (en) * 1982-09-24 1984-03-29 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US4470191A (en) * 1982-12-09 1984-09-11 International Business Machines Corporation Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
JPS60106890A (en) * 1983-11-14 1985-06-12 Shin Etsu Chem Co Ltd Grease composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
GB1086607A (en) * 1965-06-03 1967-10-11 Ncr Co Method of electrically isolating components in solid-state electronic circuits
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric

Also Published As

Publication number Publication date
JPS568880A (en) 1981-01-29
DE2218680A1 (en) 1972-12-28
NO134676C (en) 1976-11-24
JPS5416397B2 (en) 1979-06-21
DK135819B (en) 1977-06-27
ES401854A1 (en) 1975-10-16
JPS5415668B2 (en) 1979-06-16
JPS51102481A (en) 1976-09-09
NO134676B (en) 1976-08-16
JPS5415667B2 (en) 1979-06-16
FR2140383B1 (en) 1977-08-19
JPS51139277A (en) 1976-12-01
ATA338972A (en) 1979-01-15
NL160988C (en) 1979-12-17
DK135819C (en) 1977-11-28
CH542519A (en) 1973-09-30
IN139051B (en) 1976-05-01
SE371333B (en) 1974-11-11
GB1389311A (en) 1975-04-03
BR7202321D0 (en) 1973-06-07
NL7107805A (en) 1972-12-12
FR2140383A1 (en) 1973-01-19
AT351597B (en) 1979-08-10
JPS5416194B1 (en) 1979-06-20
DE2218680C2 (en) 1982-04-29
BE782285A (en) 1972-10-18
IT958758B (en) 1973-10-30
ES408617A1 (en) 1975-10-01
CA963172A (en) 1975-02-18
JPS51139276A (en) 1976-12-01

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS

V4 Discontinued because of reaching the maximum lifetime of a patent